Ge-doped Mg2Si-base thermoelectric film and preparation method thereof

A thermoelectric thin film, power supply technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of low efficiency, cumbersome process, poor controllability, etc., to reduce costs, simplify the preparation process, improve The effect of uniformity

Inactive Publication Date: 2015-12-30
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] To solve the above problems, the present invention provides a Ge-doped Mg 2 Si-based thermoelectric thin film and its preparation method, aiming to solve the problem of existing Ge-doped Mg 2 The Si-based thermoelectric thin film preparation method has the problems of cumbersome process, low efficiency, and poor controllability. It has the advantages of strong bonding between the film layer and the substrate, uniform and dense film layer, simple process, and low cost. It has great industrial application value

Method used

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  • Ge-doped Mg2Si-base thermoelectric film and preparation method thereof
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  • Ge-doped Mg2Si-base thermoelectric film and preparation method thereof

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Embodiment 1

[0022] The magnetron sputtering deposition method is used to carry out double-target cyclic sputtering, in which, one target is placed on Mg 2 For the fourth target, the power supply is radio frequency power supply; for the other target position, a simple target is placed, and the power supply is DC power supply. Coating a layer of Mg on the substrate first 2 Si, followed by a thin layer of Ge, followed by a layer of Mg 2 Si; so many times, so as to prepare a thin film with a laminated structure, and finally use vacuum annealing to obtain Ge-doped Mg 2 Si-based thermoelectric thin film. Before sputtering, use acetone, alcohol and other organic solvents to ultrasonically clean the glass slides for 15 minutes each; vacuumize to 3.5×10 -4 Below Pa, high-purity Ar gas with a flow rate of 30sccm is used as the working gas, and the working pressure is 0.5Pa; Mg 2 The RF sputtering power of the Si target is 120W, the DC sputtering power of the Ge target is 30W; the cycle is 12 ti...

Embodiment 2

[0024] The magnetron sputtering deposition method is used to carry out double-target cyclic sputtering, in which, one target is placed on Mg 2 For the fourth target, the power supply is radio frequency power supply; for the other target position, a simple target is placed, and the power supply is DC power supply. Coating a layer of Mg on the substrate first 2 Si, followed by a thin layer of Ge, followed by a layer of Mg 2 Si; so many times, so as to prepare a thin film with a laminated structure, and finally use vacuum annealing to obtain Ge-doped Mg 2 Si-based thermoelectric thin film. Before sputtering, use acetone, alcohol and other organic solvents to ultrasonically clean the glass slides for 15 minutes each; vacuumize to 3.5×10 -4 Below Pa, high-purity Ar gas with a flow rate of 30sccm is used as the working gas, and the working pressure is 0.5Pa; Mg 2The RF sputtering power of the Si target is 120W, the DC sputtering power of the Ge target is 60W; the cycle is 12 tim...

Embodiment 3

[0026] The magnetron sputtering deposition method is used to carry out double-target cyclic sputtering, in which, one target is placed on Mg 2 For the fourth target, the power supply is radio frequency power supply; for the other target position, a simple target is placed, and the power supply is DC power supply. Coating a layer of Mg on the substrate first 2 Si, followed by a thin layer of Ge, followed by a layer of Mg 2 Si; so many times, so as to prepare a thin film with a laminated structure, and finally use vacuum annealing to obtain Ge-doped Mg 2 Si-based thermoelectric thin film. Before sputtering, use acetone, alcohol and other organic solvents to ultrasonically clean the glass slides for 15 minutes each; vacuumize to 3.5×10 -4 Below Pa, high-purity Ar gas with a flow rate of 30sccm is used as the working gas, and the working pressure is 0.5Pa; Mg 2 The RF sputtering power of Si target is 120W, the DC sputtering power of Ge target is 90W; the cycle is 12 times, Ge ...

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Abstract

The invention discloses a Ge-doped Mg2Si-base thermoelectric film and a preparation method thereof. A magnetron sputtering deposition process is employed for performing double-target cyclic sputtering and further for preparing a film with a lamination structure, and then vacuum annealing is employed for obtaining the Ge-doped Mg2Si-base thermoelectric film. The thermoelectricity performance of the Mg2Si-based material is improved by utilizing Ge doping and film low-dimension processing, the method is high in controllability. The Ge element doping amount can be adjusted by adjusting the sputtering power, the sputtering time ratio and other parameters. The doped Ge element uniformity is improved by employing heat treatment. The film possesses the advantages of strong binding force between the film and a substrate, uniform compact film, simple technology, low cost and the like, and possesses significant industrial application value.

Description

technical field [0001] The invention belongs to the field of thermoelectric functional materials, in particular to a Ge-doped Mg 2 Si-based thermoelectric thin film and its preparation method. Background technique [0002] With the increasingly serious energy crisis, it is urgent to actively promote and promote the use of clean renewable energy, especially the combination of new technology development and industrialization investment in renewable energy to reduce the cost of renewable energy utilization. Thermoelectric devices can realize mutual conversion between thermal energy and electric energy, and are green and environmentally friendly energy devices with a wide range of applications. Semiconductor generators and refrigerators made of semiconductor thermoelectric power generation modules can generate electricity as long as there is a temperature difference, and can be used for cooling when supplying power. They work without noise and pollution, and have a service life...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 温翠莲陈志坚周白杨詹晓章黄小桂熊锐林逵
Owner FUZHOU UNIV
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