Heating electrode material for phase transformation memory and preparing method

Abstract

The invention relates to a heating electrode material for phase varying memory and the preparing method thereof, where the heating electrode material is a heating electrode material at least containing Ge element whose general formula is one of GexWyN1-x-y, GexTiyN1-x-y, GexWyO1-x-y and GexTiyO1-x-y, where x and y are atomic percents of elements and 0<x<=1, 0<=y<1, and 0<x+y<=1; the preparing method adopts any one of the processes: sputtering, evaporating, atomic layer deposition, chemical vapour deposition, and metallic organic matter thermal decomposition or laser auxiliary deposition, and as compared with traditional heating electrode materials such as W, TiN, TiON and TiAlN, the Ge-base heating electrode material of the invention has advantages of adhesive property to phase varying material, high resistance, etc, able to raise heating efficiency of devices and reduce device power losses.

Description

technical field

[0001] The invention relates to a heating electrode material and a preparation method that can be used in a phase change memory, more precisely, it relates to a composition design and a preparation method of a Ge-based heating electrode material. Higher advantages, thereby improving the heating efficiency of the device and reducing the power consumption of the device, belong to the field of microelectronic technology. Background technique

[0002] Phase change memory technology is based on Ovshinsky's proposal in the late 1960s (Phys. Rev. Lett., 21, 1450-1453, 1968) and early 1970s (Appl. Phys. Lett., 18, 254-257, 1971) The idea that the phase change film can be applied to the phase change storage medium is established, and it is a storage device with low price and stable performance. Phase-change memory can be made on a silicon wafer substrate, and its key materials are recordable phase-change films, heating electrode materials, heat insulating materials, ...

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