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MOSFET with SiGe source region and SiGe drain region and forming method of MOSFET

A source-drain and drain region technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of complex process, high production cost, difficult to form quality, etc., to achieve good electrical performance, low cost, series resistance small effect

Inactive Publication Date: 2014-08-06
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims to solve at least to a certain extent the problems of difficulty in forming a good-quality SiGe film in the source and drain of the above-mentioned MOSFET, complicated process and high production cost.

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  • MOSFET with SiGe source region and SiGe drain region and forming method of MOSFET
  • MOSFET with SiGe source region and SiGe drain region and forming method of MOSFET
  • MOSFET with SiGe source region and SiGe drain region and forming method of MOSFET

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Embodiment Construction

[0034] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0035] In the present invention, unless otherwise clearly specified and limited, a first feature being "on" or "under" a second feature may include direct contact between the first and second features, and may also include the first and second features Not in direct contact but through another characteristic contact between them. Moreover, "above", "above" and "above" the first feature on the second feature include that the first feature is directly above and obliquely above the second feature, or simply means that the first feat...

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Abstract

The invention provides an MOSFET with a SiGe source region and a SiGe drain region and a forming method of the MOSFET. The forming method includes the following steps of providing a substrate with a Si layer at the top, forming gate stacking or a fake gate on the upper portion of the substrate, forming openings of the source region and the drain region on the two sides of the gate stacking or the fake gate, exposing the Si layer at the opening positions, and injecting atoms, molecules, ions or plasmas containing Ge elements into the surface layer of the Si layer so that SiGe layers can be formed at the opening positions. According to the forming method of the MOSFET, the MOSFET with the SiGe source region and the SiGe drain region can be formed, the SiGe source region and SiGe drain region are thin, crystalline quality is good, and accordingly the MOSFET has good electrical property, and the method has the advantages of being simple, easy to carry out and low in cost.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a MOSFET with SiGe source and drain and a forming method thereof. Background technique [0002] With the development of microelectronics technology and the continuous reduction of MOSFET device size, the low mobility of Si material has become the main factor restricting device performance. In order to continuously improve the performance of the device, measures must be taken to increase the carrier mobility in the channel. At present, the strained silicon technology is widely used in the industry. For p-MOSFET, the main technical solution is the source-drain SiGe technology, that is, the strained SiGe material is used in the source and drain regions. On the one hand, it generates uniaxial compressive stress on the channel to improve the hole mobility in the channel, and on the other hand, it can reduce the source-drain. of series resistance. [0003] When growing SiGe...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L21/265H01L29/78H01L29/10
CPCH01L29/78H01L21/26513H01L29/1033H01L29/4232H01L29/66477
Inventor 王敬肖磊梁仁荣许军
Owner TSINGHUA UNIV
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