Ge (germanium) element compensation method for CdGeAs2 single crystal growth

A technology of element compensation and crystal growth, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of large variation of Ge content at both ends of the single crystal, uneven Ge composition, inconsistent performance, etc., to achieve Avoid inconsistent crystal properties, uniform Ge elements, and reduce growth costs

Inactive Publication Date: 2018-12-21
CHINA ELECTRONICS TECH GRP NO 46 RES INST
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Problems solved by technology

[0005] The purpose of the invention is to solve the existing CdGeAs 2 Single crystal composition segregation, large variation of Ge content at both ends of single cryst...

Method used

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  • Ge (germanium) element compensation method for CdGeAs2 single crystal growth
  • Ge (germanium) element compensation method for CdGeAs2 single crystal growth
  • Ge (germanium) element compensation method for CdGeAs2 single crystal growth

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Embodiment

[0016] Embodiment: This method adopts a growth device composed of a single crystal growth crucible 1, a germanium element compensation device 2 and a six-temperature zone growth furnace to control the germanium element compensation for the growth of arsenic, germanium, and cadmium single crystals. This method is completed by the following growth steps :

[0017] A, take out 600g purity and be the arsenic germanium cadmium crystal growth raw material of 99.9999%, put into such as figure 1 The bottom part of the single crystal growth crucible 1 made of quartz is shown;

[0018] B. Put 4g of germanium element with a purity of 99.9999% into the germanium element compensation device 2, the material of the germanium element compensation device 2 is high-purity quartz, and the bottom of the germanium element compensation device 2 is as follows figure 2 The shown five-hole mesh structure allows the melted germanium solution to flow into the raw material solution for the growth of ar...

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Abstract

The invention discloses a Ge (germanium) element compensation method for CdGeAs2 single crystal growth. The method adopts a growth device comprising a single crystal growth crucible, a germanium element compensation device and a six-temperature-zone growth furnace for controlling Ge element compensation for CdGeAs2 single crystal growth. A high-purity CdGeAs2 multi-crystal raw material is put in acrucible provided with a Ge element compensation device for vacuum sealing and then put in the six-temperature-zone growth furnace, CdGeAs2 single crystal growth and Ge element compensation are realized through accurate temperature control, so that Ge elements at the upper and lower ends of the grown single crystal are uniform, and the phenomenon of inconsistent properties formed by different Geelements in the single crystal is avoided. The method is easy to implement, the utilization rate of the single crystal is effectively increased, and the growth cost is reduced.

Description

technical field [0001] The invention belongs to the field of single crystal growth, in particular to a cadmium arsenic germanium (CdGeAs 2 ) Ge element compensation method for single crystal growth. Background technique [0002] CdGeAs 2 Single crystal has the largest nonlinear optical coefficient and is an excellent mid-to-far infrared nonlinear optical crystal. CdGeAs 2 Single crystal belongs to the point group and space group, and it is the crystal with the highest nonlinear coefficient among the known nonlinear optical crystals, the nonlinear coefficient d 36 Can reach 236pm / V, for ZnGeP 2 3 times that of the crystal, 500 times the nonlinear coefficient of the KDP crystal, the performance advantage is obvious. CdGeAs 2 Single crystal birefringence gradient n e with n o The difference can reach 0.09, and phase matching can be achieved in a wide wavelength range. In addition, CdGeAs 2 Single crystals have a wide range of infrared transmission bands, high laser da...

Claims

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Application Information

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IPC IPC(8): C30B11/06C30B29/10
CPCC30B11/006C30B11/06C30B29/10
Inventor 霍晓青刘禹岑赵堃徐永宽于凯
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST
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