The method for preparing an
amorphous silicon thin film according to the present invention includes: placing a substrate in a
vacuum chamber; controlling the pressure in the
vacuum chamber at a predetermined value and performing surface treatment on the substrate; and introducing
silane gas and a rarefied gas into the
vacuum chamber, heating the substrate, and depositing an
amorphous silicon thin film on the substrate using
silane gas ions. This method is characterized by low manufacturing difficulty, simple process, and low cost, while improving the growth rate and uniformity of the thin film, making the manufacturing process more stable and controllable, and resulting in a more uniform, dense, and stable
amorphous silicon thin film.