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Methods for manufacturing phase change memory

A phase-change memory and a technology of a manufacturing method, applied in the field of phase-change memory manufacturing, can solve problems such as poor contact performance between the phase-change layer and the bottom electrode, and achieve the effects of preventing falling off, strong process compatibility, and improving reliability

Active Publication Date: 2014-06-04
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The problem solved by the present invention is to propose a new manufacturing method of phase change memory to improve the poor contact performance between the phase change layer and the bottom electrode of the existing phase change memory

Method used

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  • Methods for manufacturing phase change memory
  • Methods for manufacturing phase change memory
  • Methods for manufacturing phase change memory

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Figure 2-Figure 7 Shown is a schematic structural diagram of the manufacturing method of the phase change memory provided in the first embodiment. The following combination Figure 2-Figure 7 Make a specific introduction.

[0049] First, execute step S11: as figure 2 In the top view shown, a semiconductor substrate 20 is provided, on which at least the lower electrode 22 of the phase change memory embedded in the first dielectric layer 21 is formed. The bottom electrode 22 is also called the bottom electrode and the bottom contact structure. For the purpose of reducing the operating current of the phase change memory, it is generally in the shape of a long and narrow strip with a narrow width, for example, less than 10 nm. For the convenience of following steps, this embodiment gives figure 2 The cross-sectional structure of the A-A line in the middle is as follows image 3 shown.

[0050]The semiconductor substrate 20 can be an existing semiconductor material,...

Embodiment 2

[0071] Figure 8-Figure 10 Shown is a structural schematic diagram of another phase change memory manufacturing method provided by the invention. The following combination Figure 8-Figure 10 Make a specific introduction.

[0072] Firstly, step S21 is performed: providing a semiconductor substrate on which at least the lower electrode of the phase change memory embedded in the first dielectric layer is formed. This step is the same as the step S11 of the first embodiment, the structure of the semiconductor substrate 20, the first dielectric layer 21 thereon and the lower electrode 22 embedded in the dielectric layer 21 is still referred to figure 2 and image 3 shown.

[0073] Executing step S22: forming a second dielectric layer on the lower electrode and the first dielectric layer, and forming a trench exposing the lower electrode in the second dielectric layer by photolithography and etching. This step is the same as step S12 of Embodiment 1, and the structure of the ...

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Abstract

The invention provides two methods for manufacturing a phase change memory. According to the methods, a phase change material peeling phenomenon of the phase change memory is avoided. According to the first technical scheme, the method comprises the steps that a TiON bonding layer is arranged between a phase change material and a dielectric layer covering a lower electrode, the bonding degree between the dielectric layer and the phase change material is increased through the TiON bonding layer, so that the phase change material is prevented from falling off, and therefore the reliability of the phase change memory is improved. According to the second technical scheme, the bonding layer of a side-wall shape is formed to increase the bonding performance of the phase change material, a diffusion impervious layer of the side wall and the dielectric layer of the side wall; due to the fact that the size of the bottom of the side wall is larger than the size of the top of the side wall, the size of the bottom of a space where the phase change material is deposited is made to be smaller than the size of the top of the space, the contact area of the phase change material and the lower electrode is reduced, in other words, the bonding performance of the phase change material, the diffusion impervious layer of the side wall and the dielectric layer of the side wall is increased through the bonding layer of the side-wall shape is increased, the contact area of the phase change material and the lower electrode is reduced, and an operation current is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a manufacturing method of a phase-change memory that can prevent phase-change materials from peeling off. Background technique [0002] As an emerging non-volatile storage technology, phase change memory has greater advantages over flash memory FLASH in many aspects such as read and write speed, read and write times, data retention time, cell area, and multi-value implementation. It has become the focus of current research on non-volatile storage technology. The continuous progress of phase change memory technology makes it a mainstream product in the future non-volatile memory technology market. [0003] In phase-change memory (PCRAM), the value of the memory can be changed by heat-treating the phase-change layer on which data is recorded. The phase change material constituting the phase change layer enters a crystalline state or an amorphous state due to the heating...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 林静洪中山
Owner SEMICON MFG INT (SHANGHAI) CORP
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