The invention provides two methods for manufacturing a
phase change memory. According to the methods, a
phase change material peeling phenomenon of the
phase change memory is avoided. According to the first technical scheme, the method comprises the steps that a TiON bonding layer is arranged between a
phase change material and a
dielectric layer covering a lower
electrode, the bonding degree between the
dielectric layer and the
phase change material is increased through the TiON bonding layer, so that the
phase change material is prevented from falling off, and therefore the reliability of the
phase change memory is improved. According to the second technical scheme, the bonding layer of a side-wall shape is formed to increase the bonding performance of the phase change material, a
diffusion impervious layer of the side wall and the
dielectric layer of the side wall; due to the fact that the size of the bottom of the side wall is larger than the size of the top of the side wall, the size of the bottom of a space where the phase change material is deposited is made to be smaller than the size of the top of the space, the contact area of the phase change material and the lower
electrode is reduced, in other words, the bonding performance of the phase change material, the
diffusion impervious layer of the side wall and the
dielectric layer of the side wall is increased through the bonding layer of the side-wall shape is increased, the contact area of the phase change material and the lower
electrode is reduced, and an operation current is reduced.