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Preparation method of indium oxide thin film transistor of low sub-threshold value amplitude of oscillation

A sub-threshold swing, thin-film transistor technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems that are not conducive to the development of metal oxide thin-film transistors, use toxic solvents, and have many process steps. The effect of large-scale production and application, simple preparation operation and strong process compatibility

Active Publication Date: 2018-09-28
EAST CHINA NORMAL UNIV
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Problems solved by technology

Excessive temperature in the process not only wastes resources and increases costs, but also is not conducive to the development of metal oxide thin film transistors in the direction of flexible devices.
In order to reduce the annealing temperature, researchers have made many attempts, but there are still problems such as many process steps, cumbersome operations, and the use of toxic solvents.

Method used

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  • Preparation method of indium oxide thin film transistor of low sub-threshold value amplitude of oscillation
  • Preparation method of indium oxide thin film transistor of low sub-threshold value amplitude of oscillation
  • Preparation method of indium oxide thin film transistor of low sub-threshold value amplitude of oscillation

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Embodiment Construction

[0028] Indium nitrate hydrate In(NO3)3˙xH2O was dissolved in deionized water at a concentration of 0.1 mol / L, and magnetically stirred at room temperature for 8 hours to form a clear and transparent indium oxide precursor solution. The heavily doped low-resistance silicon substrate was submerged in deionized water, acetone and isopropanol for ultrasonic cleaning for 10 min, and after the substrate was blown dry with a nitrogen gun, the surface of the substrate was further cleaned by plasma cleaning.

[0029] After cleaning, an atomic layer deposition equipment was used to prepare a 11nm high-dielectric aluminum oxide film on a silicon substrate. After the aluminum oxide film was cleaned with oxygen plasma for 70 seconds, the indium oxide precursor solution was spin-coated by spin coating immediately. On the aluminum oxide film, the rotational speed of spin coating is 5000rpm, and the time is 25s. After the spin coating, the sample was preheated on a heating plate at 150°C for ...

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Abstract

The invention discloses a preparation method of an indium oxide thin film transistor of low sub-threshold value amplitude of oscillation, and belongs to the technical field of preparation of a semiconductor thin film transistor. According to the method, atomic layer deposition (ALD) equipment is adopted, and a layer of aluminum oxide thin film is deposited on a heavily doped silicon substrate; then by adopting a spin coating mode, the aluminum oxide thin film is uniformly coated with an indium nitrate water solution to be pre-heated at a temperature of 100-150 DEG C for 10min; then optical annealing is performed in a position of 10cm below a high-pressure mercury lamp for 1.5h to decompose indium nitrate into indium oxide; and finally, by adopting a thermal evaporation mode, an aluminum electrode is evaporated on an indium oxide thin film to obtain the thin film transistor of low sub-threshold value amplitude of oscillation. By adoption of the preparation method, the preparation technology of the existing indium oxide thin film transistor is optimized, and low cost, simple and convenient operation and environment friendly materials are realized; the high-pressure mercury lamp is adopted for performing optical annealing, so that the indium oxide thin film can be prepared at a temperature of 100 DEG C or below; and the obtained thin film transistor is relatively low in sub-threshold value amplitude of oscillation and excellent in working performance.

Description

technical field [0001] The invention relates to the technical field of metal oxide semiconductor thin film transistor preparation, in particular, an indium oxide thin film transistor with low subthreshold swing is prepared by using an annealing process with the advantage of low temperature. Background technique [0002] Thin Film Transistor (TFT) is a pixel driving device for display backplanes and other optoelectronic devices. Among them, amorphous metal oxide semiconductors have been a research hotspot as the channel layer material of TFTs. Commonly used amorphous metal oxide semiconductors include indium oxide (In 2 o 3 ), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), etc., because of their advantages of high mobility, high transparency, and large-area uniformity, they have become candidates for next-generation semiconductor materials in the field of flat panel displays. [0003] The preparation process of amorphous metal oxide semiconductors has been great...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/34H01L21/477H01L29/786
CPCH01L21/477H01L29/66969H01L29/78693
Inventor 李文武杨佳燕杨宇殷文磊胡志高褚君浩
Owner EAST CHINA NORMAL UNIV
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