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Metal oxide thin film transistor (TFT) device and fabrication method thereof

A manufacturing method and oxide technology, which are applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as affecting the switching state of TFT devices, and achieve the effects of reducing interface defects, improving electrical properties, and improving contact interfaces.

Inactive Publication Date: 2017-08-29
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology

[0007] At present, the electron mobility of the active layer of the metal oxide TFT device represented by IGZO still needs to be further improved, and usually, the contact interface between IGZO and the gate insulating layer will trap electrons due to the existence of defects, which will affect the TFT. Switching state of the device

Method used

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  • Metal oxide thin film transistor (TFT) device and fabrication method thereof
  • Metal oxide thin film transistor (TFT) device and fabrication method thereof
  • Metal oxide thin film transistor (TFT) device and fabrication method thereof

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Embodiment Construction

[0040] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0041] see figure 1 , the present invention firstly provides a metal oxide TFT device, comprising a substrate 1, a gate 3 disposed on the substrate 1, a gate insulating layer 5 covering the gate 3 and the substrate 1, and a gate insulating layer 5 on the gate 3, the active layer 7 disposed on the gate insulating layer 5, and the source electrode 91 and the drain electrode 92 disposed on the gate insulating layer 5 respectively contacting both sides of the active layer 7.

[0042] The active layer 7 adopts a sandwich-like structure, including a lower layer of indium gallium zinc oxide film 71, an upper layer of indium gallium zinc oxide film 73 opposite to the lower layer of indium gallium zinc oxide film 71, and an interposed The middle condu...

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Abstract

The invention provides a metal oxide thin film transistor (TFT) device and a fabrication method thereof. An active layer (7) of the metal oxide TFT device employs a structure similar to a sandwich and comprises a low-layer indium gallium zinc oxide thin film (71), an upper-layer indium gallium zinc oxide thin film (73) and an intermediate conductive layer (75), wherein the upper-layer indium gallium zinc oxide thin film (73) is arranged opposite to the low-layer indium gallium zinc oxide thin film (71), the intermediate conductive layer (75) is sandwiched between the low-layer indium gallium zinc oxide thin film (71) and the upper-layer indium gallium zinc oxide thin film (73), and a material of the intermediate conductive layer (75) is a metal oxide highly containing indium or a metal oxide highly containing zinc. By the metal oxide TFT device, the electron mobility can be further improved, the interface defect of the active layer (7) and a grid insulation layer (5) is reduced, and the electrical property of the TFT device is improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a metal oxide TFT device and a manufacturing method thereof. Background technique [0002] The flat panel display has many advantages such as thin body, power saving, no radiation, etc., and has been widely used. Existing flat panel displays mainly include Liquid Crystal Display (LCD) and Organic Light Emitting Display (OLED). [0003] Most of the liquid crystal displays currently on the market are backlight liquid crystal displays, which include a housing, a liquid crystal panel disposed in the housing, and a backlight module disposed in the housing. The structure of the liquid crystal panel is composed of a color filter substrate (Color Filter, CF), a thin film transistor array substrate (Thin Film Transistor Array Substrate, TFT Array Substrate), and a liquid crystal layer (Liquid CrystalLayer) arranged between the two substrates. , its working principle is to control the r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L21/34
CPCH01L29/66969H01L29/78606H01L29/7869
Inventor 翟玉浩
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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