Insulated gate bipolar transistor and preparation method thereof

Abstract

The invention provides an insulated gate bipolar transistor and a preparation method thereof. The insulated gate bipolar transistor comprises an N-drift region (4), P-type base regions (5), N-buffer layers (10) and N+emitter regions (6); the P-type base regions (5) are located on the two sides of the upper surface of the N-drift region (4), and the N+emitter regions (6) are located on the upper surfaces of the P-type base regions (5) and have a set distance away from the outer sides of the P-type base regions (5); and the N-buffer layers (10) are located in the P-type base regions (5) below the N+emitter regions (6), the conduction voltage drop of the insulated gate bipolar transistor is reduced through the N-buffer layers (10), and the latch-up phenomenon of the insulated gate bipolar transistor is effectively inhibited. According to the insulated gate bipolar transistor, the carrier concentration in the drift region is improved through Schottky contact, and the distribution of carriers in the drift region of the insulated gate bipolar transistor is further improved, so that the conductivity modulation effect is enhanced, the conduction voltage drop is reduced, the firmness of theinsulated gate bipolar transistor is improved through the N-buffer layers, and the large-current turn-off capability of the insulated gate bipolar transistor is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an insulated gate bipolar transistor and a preparation method thereof. Background technique [0002] Power semiconductor devices, as the core components in power electronic systems, have always been indispensable and important electronic components. Insulated gate bipolar transistor (IGBT) is an improved power device that can replace bipolar junction power transistors. As a new generation of power electronic devices, IGBT combines the advantages of field effect transistor (MOSFET) and bipolar crystal transistor (BJT), which not only has the advantages of easy driving of MOSFET, low input impedance and fast switching speed, but also has the advantages of Due to the advantages of high state current density, low conduction voltage, low loss and good stability, it has developed into one of the core electronic components in modern power electronic circuits and is widely used i...

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the shortcomings of high conduction voltage and poor robustness in the above-mentioned prior art, the present invention provides an insulated gate bipolar transistor, comprising an N-drift region (4), a P-type base region (5), an N-buffer layer ( 10) and N+ emission area (6);

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