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A method for connecting aluminum nitride ceramic plate and metal based on PVD deposition method

A technology of aluminum nitride ceramics and a deposition method, which is applied in the field of ceramic metallization, can solve the problems of reducing the thermal conductivity of aluminum nitride ceramic plates and cumbersome processes, and achieves less solder overflow, controllable materials, and simple control conditions Effect

Active Publication Date: 2020-04-28
苏州博志金钻科技有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The process of this method is more cumbersome and requires high temperature treatment.
There is also provided a method of using magnetron sputtering to deposit a NiCr bonding transition layer and then utilizing pulse magnetron sputtering a copper layer on the NiCr bonding transition layer to obtain an aluminum nitride ceramic copper clad laminate, pointing out the relationship between NiCr and aluminum nitride ceramics The reaction zone is only one or two atomic layers thick, and oxygen also plays an important role in bonding, so this method is only effective for connecting thinner copper layers, and also reduces the thermal conductivity of aluminum nitride ceramic plates

Method used

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  • A method for connecting aluminum nitride ceramic plate and metal based on PVD deposition method
  • A method for connecting aluminum nitride ceramic plate and metal based on PVD deposition method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] like figure 1 As shown, the method for connecting aluminum nitride ceramic plate and metal based on PVD deposition method comprises the following steps:

[0039] Step 1, cleaning the aluminum nitride ceramic plate: after soaking in absolute ethanol, ultrasonically in acetone and absolute ethanol for 10-15 minutes, after drying, use radio frequency plasma cleaning in the magnetron sputtering chamber for 20 minutes ~30min;

[0040] Step 2, block the aluminum nitride ceramic substrate with the chamber sample baffle, pass in argon gas with a purity of 99.99%, the air flow is 20sccm, adjust the air pressure in the chamber to 0.3Pa, and use a DC power supply of 130W for titanium with a purity of 99.99% Plasma cleaning is performed on the target surface for 15 minutes, then the base negative bias is applied -50V, then the titanium target baffle is opened, the sample baffle is opened, and the sputter deposition is started, and the sample baffle and the titanium target baffle a...

Embodiment 2

[0044] like figure 1 As shown, the method for connecting aluminum nitride ceramic plate and metal based on PVD deposition method comprises the following steps:

[0045] Step 1, cleaning the aluminum nitride ceramic plate: after soaking in absolute ethanol, ultrasonically in acetone and absolute ethanol for 10-15 minutes, after drying, use radio frequency plasma cleaning in the magnetron sputtering chamber for 20 minutes ~30min;

[0046] Step 2, block the aluminum nitride ceramic substrate with the chamber sample baffle, pass in argon gas with a purity of 99.99%, the air flow is 30sccm, adjust the air pressure in the chamber to 0.3Pa, and use a DC power supply of 150W for titanium with a purity of 99.99% Plasma cleaning is performed on the target surface for 20 minutes, then the base negative bias is applied to -70V, then the titanium target baffle is opened, the sample baffle is opened, and the sputtering deposition is started, and the sample baffle and the titanium target ba...

Embodiment 3

[0050] like figure 1 As shown, the method for connecting aluminum nitride ceramic plate and metal based on PVD deposition method comprises the following steps:

[0051] Step 1: Clean the aluminum nitride ceramic plate, soak it in absolute ethanol, then ultrasonically in acetone and absolute ethanol for 10-15 minutes, after drying, clean it with radio frequency plasma in the magnetron sputtering chamber for 20-20 minutes. 30min;

[0052] Step 2, block the aluminum nitride ceramic substrate with the chamber sample baffle, pass in argon gas with a purity of 99.99%, the air flow is 30sccm, adjust the air pressure in the chamber to 0.3Pa, and use a DC power supply of 150W for titanium with a purity of 99.99% Plasma cleaning is performed on the surface of the target for 25 minutes, and then the base negative bias is applied -100V, then the titanium target baffle is opened, and the sputtering deposition starts. layer preparation.

[0053] Step 3, the chamber pressure is still main...

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Abstract

The invention discloses a method for connecting an aluminum nitride ceramic plate and metal based on PVD deposition, The method includes the following steps that, firstly, a layer of titanium film isformed on the surface of the aluminum nitride ceramic plate through PVD deposition, a silver-tin layer with a certain thickness is deposited, then a clamping die is used for combining the coated surface of the aluminum nitride ceramic plate with a metal plate (block) coated with copper film and applying certain pressure, finally the aluminum nitride ceramic plate combined with the metal plate is placed in a vacuum annealing furnace for heating and heat preservation, and the high-strength connection between the aluminum nitride ceramic plate and the metal can be achieved. After the high-strength connection between the aluminum nitride ceramic plate and the metal is achieved, a traditional ceramic-metal connection process is simplified, the problem of air tightness of the bonding surface caused by oxide bonding in a direct copper cladding method is avoided, and the thermal conductivity and heat dissipation performance of the substrate are improved.

Description

technical field [0001] The invention belongs to the field of ceramic metallization, in particular to a method for connecting an aluminum nitride ceramic plate and metal based on a PVD deposition method. Background technique [0002] The heat dissipation of high-power, high-density and highly integrated electronic devices seriously affects the service efficiency and life of the devices, and is the main problem restricting the development of devices. Aluminum nitride (AlN) ceramics have good thermal conductivity (the thermal conductivity can reach 150-300W / m K), as well as high mechanical strength and non-toxicity. It is an ideal substrate material for the packaging of new generation electronic devices. . [0003] However, aluminum nitride ceramics are difficult to effectively connect with electronic chips or metal copper heat sinks due to their strong covalent bonds, which limits the use of aluminum nitride ceramics as packaging substrates. The current common technology is ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/16C23C14/18C23C14/35C04B37/02
CPCC04B37/021C23C14/165C23C14/185C23C14/352
Inventor 宋忠孝张宏凯李雁淮李响
Owner 苏州博志金钻科技有限责任公司
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