1results about How to "Improve short circuit performance" patented technology

A kind of high short-circuit capability IGBT device, including trench on N type substrate, the P type trap region is below the trench outside, the conductive channel of the IGBT device is located in P trap type region near the side wall of trench, when the device gate applies voltage and makes the device open, the width of each channel in vertical direction remains consistent, the error value of channel width does not exceed the maximum error value set.The high short-circuit capability IGBT device of the utility model, inhibits the appearance of device short channel effect, reduces the saturation current of device, improves short-circuit capability, simultaneously, because P type trap region average concentration is higher than traditional structure, therefore, bulk region resistance reduces, and the anti-latch-up capability of device is improved.