3results about How to "Improve short circuit performance" patented technology

The invention relates to an N-pole module assembly of a circuit breaker and the circuit breaker. The N-pole module assembly of the circuit breaker comprises a main body function module and a current detection module, and further comprises a first N-pole conductive plate fixedly integrated on the main body function module and a second N-pole conductive plate fixedly integrated on the current detection module, and the main body function module and the current detection module are respectively two independent modular structures. And the first N-pole current-conducting plate and the second N-pole current-conducting plate are fixedly and electrically connected to form an N-pole electric loop. According to the invention, the complicated bending and wiring process of the soft wire in the N-pole module assembly in the prior art is avoided, the assembly is convenient, and the automatic assembly can be realized. Moreover, through the special arrangement of the relative positions of the N-pole electric loop and the L-pole electric loop, the Lorentz force generated by the magnetic field generated by the current on the N-pole electric loop on the electric arc in the circuit breaker unit can assist the electric arc to be further pushed and lengthened, and the effect of enhancing the magnetic quenching function can be achieved.

A kind of high short-circuit capability IGBT device, including trench on N type substrate, the P type trap region is below the trench outside, the conductive channel of the IGBT device is located in P trap type region near the side wall of trench, when the device gate applies voltage and makes the device open, the width of each channel in vertical direction remains consistent, the error value of channel width does not exceed the maximum error value set.The high short-circuit capability IGBT device of the utility model, inhibits the appearance of device short channel effect, reduces the saturation current of device, improves short-circuit capability, simultaneously, because P type trap region average concentration is higher than traditional structure, therefore, bulk region resistance reduces, and the anti-latch-up capability of device is improved.

The invention relates to a semiconductor chip with double-sided grooves and a manufacturing method thereof. Belongs to the technical field of power semiconductor devices. The problems that an existing single-groove chip is low in production efficiency, high in cost and limited in forward and reverse blocking voltage boosting are mainly solved. The device is mainly characterized in that the trenches are terminal double-sided trenches and are respectively and symmetrically arranged at P-N junction terminals of the N-type substrate, the anode P layer and the cathode P layer, and the inner surfaces of the trenches are provided with protective layers; and cathode P short-circuit points and cathode P + short-circuit points embedded in the cathode P short-circuit points are uniformly arranged in the cathode N + region, so that a low-resistance conductive current channel is formed. According to the invention, the design of a P-type punch-through ring structure is canceled, and the low-concentration P-type doping and high-concentration P + design is adopted, so that the short-circuit punch-through resistance can be reduced, the through-current capability and the blocking voltage of the chip can be improved, and the method is mainly used for manufacturing medium-voltage and high-voltage power semiconductor device chips.