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Double-groove type SiC MOSFET cellular structure, device and manufacturing method

A double-groove, cellular technology, applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve the problems of conduction current and instantaneous power increase, and achieve reduction of gate-drain capacitance and electric field Peak value, the effect of reducing the on-resistance of the device

Inactive Publication Date: 2022-04-01
北京昕感科技有限责任公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] In addition, in power electronic systems, when the device is in the on state, the load is short-circuited or the device is turned on when the load is short-circuited, which will lead to a rapid increase in the conduction current and instantaneous power

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  • Double-groove type SiC MOSFET cellular structure, device and manufacturing method
  • Double-groove type SiC MOSFET cellular structure, device and manufacturing method
  • Double-groove type SiC MOSFET cellular structure, device and manufacturing method

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Embodiment Construction

[0044] Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. In the various drawings, the same elements are denoted by the same reference numerals, and various parts in the drawings are not drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0045] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0046] Terms used in the present invention are only for describing specific embodiments, and are not ...

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Abstract

The invention discloses a double-groove type SiC MOSFET cellular structure and device and a manufacturing method thereof, the double-groove type SiC MOSFET cellular structure comprises an N + + type SiC substrate, an N-type SiC drift layer, a P type base region and an N + type source region, the N-type SiC drift layer is located above the N + + type SiC substrate and is provided with a source electrode groove and a grid electrode groove, and the bottom of the source electrode groove is provided with an N type hole blocking layer and a source electrode P + type shielding layer; an N-type current conducting layer and a grid P + type shielding layer are arranged at the bottom of the grid groove, and a grid dielectric layer and a grid electrode are arranged in the grid groove; the P-type base region and the N + type source region are located on the N-type SiC drift layer between the source trench and the gate trench and are arranged from bottom to top. Shielding of the drain voltage is further enhanced, the electric field peak value and the gate-drain capacitance of the gate dielectric layer are reduced, the reliability of the gate dielectric layer and the working frequency of the device are improved, the on-resistance of the device can be reduced, and the short-circuit capability of the device can be enhanced.

Description

technical field [0001] The invention relates to the technical field of transistor electronic device preparation, in particular to a double-groove SiC MOSFET cell structure, a device and a manufacturing method thereof. Background technique [0002] Silicon carbide (SiC) is a third-generation semiconductor material. The band gap is three times that of silicon (Si), the first-generation semiconductor material, the critical breakdown electric field strength is ten times that of Si, and the electron saturation drift rate is Si 2 times that of Si, and the thermal conductivity is 3 times that of Si, which makes SiC power semiconductor devices, especially SiC MOSFETs, have significant performance advantages such as high temperature, high voltage, high frequency, and high efficiency, and have broad application prospects in power electronic systems. [0003] A key challenge for SiC MOSFETs is in SiC / SiO 2 There are interface states and the scattering effect of trapped charges on elec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336H01L29/16H01L29/423
Inventor 张文渊马鸿铭王哲
Owner 北京昕感科技有限责任公司
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