Groove type IGBT primitive cell structure manufacturing method and groove type IGBT primitive cell structure

Abstract

The invention relates to a trench-type IGBT primitive cell structure manufacturing method and a trench-type IGBT primitive cell structure, and the method comprises the steps: forming an oxide layer on a conductive single crystal wafer, and growing a locos oxide layer film on the oxide layer between two primitive cells; manufacturing a silicon groove by using the deposited oxide layer as a hard mask, growing a sacrificial oxide layer in the silicon groove for corrosion, and generating a gate oxide layer; depositing doped polycrystals, etching the polycrystals at the positions corresponding to the emitter region contact holes, doping and injecting to form a P well structure on the primitive cell, and diffusing to form a P well; injecting the arsenic impurities into the P well and diffusing the arsenic impurities to form a current region structure; depositing a doped oxide layer, forming an emitter region contact hole in the doped oxide layer, etching the emitter region contact hole to form a shallow silicon groove, enabling the shallow silicon groove to penetrate through the current region structure to extend to the P well, and injecting boron ions at the bottom of the current region structure for doping to form a boron halo ring; carrying out hole annealing after a halo ring is injected into the contact hole of the emitter region, and depositing the metal to form contact lead metal of the emitter region.

Description

technical field [0001] The present application relates to the technical field of semiconductor technology, in particular to a method for manufacturing a trench type IGBT primary cell structure and a trench type IGBT primary cell structure. Background technique [0002] The primary cell structure and size of the trench type IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) are important considerations for the device in the application terminal, which is embodied in the short-circuit time capability of the device and the key dynamic loss parameters. Very important considerations. To optimize the above two important factors and balance the static and dynamic data of the device to meet the requirements of the circuit, the IGBT device is very important in the original cell structure and size design. [0003] The traditional trench-type IGBT primary cell structure can well solve the JFET effect resistance problem of planar IGBT, but there will be a proble...

AI Technical Summary

Problems solved by technology

[0004] Based on this, it is necessary to address the problem of poor short-circuit capability of the traditional trench-type IGBT primary-cell structure, and provide a trench-type IGBT primary-cell structure manufacturing method and a trench-type IGBT primary-cell structure that can improve the short-circuit capability

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