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Silicon carbide trench gate MOSFET and manufacturing method thereof

A technology of silicon carbide trench and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve the effects of reducing on-resistance, reducing electric field, and reducing electric field of gate dielectric

Active Publication Date: 2021-11-23
ZHEJIANG UNIV HANGZHOU GLOBAL SCI & TECH INNOVATION CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the above problems in the existing situation, the present invention proposes a silicon carbide trench gate MOSFET and its manufacturing method

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  • Silicon carbide trench gate MOSFET and manufacturing method thereof
  • Silicon carbide trench gate MOSFET and manufacturing method thereof
  • Silicon carbide trench gate MOSFET and manufacturing method thereof

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Embodiment Construction

[0045] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that the embodiments described here are only for illustration, not for limiting the present invention. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be understood by one of ordinary skill in the art that these specific details are not required to practice the present invention. Additionally, in some embodiments, well-known circuits, materials or methods have not been described in detail in order not to obscure the present invention.

[0046] Throughout this specification, reference to "one embodiment," "an embodiment," "an example," or "example" means that a particular feature, structure, or characteristic described in connection with the embodiment or example is included in the present invention. In at least one em...

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Abstract

The invention provides a silicon carbide trench gate MOSFET and a manufacturing method thereof. The silicon carbide trench gate MOSFET comprises a substrate with a first doping type, an epitaxial layer which is formed on the substrate and has the first doping type, an epitaxial well region which is formed above the epitaxial layer and has a second doping type, a first source contact region which is formed in the epitaxial well region and has a first doping type, a second source contact region which has a second doping type, atrench gate, a source electrode and a drain electrode, wherein thetrench gate comprises a gate dielectric and a gate electrode. The silicon carbide trench gate MOSFET is characterized by comprising a concave injection type current diffusion region which wraps the bottom of a trench gate and has a first doping type, and the bottom of the injection type current diffusion region is not higher than the bottom of an epitaxial well region. The injection type current diffusion region is reasonably arranged, the saturation current of the device can be limited, meanwhile, the electric field peak value and the current position can be separated, the heating power is reduced, and the short-circuit capacity of the device is improved.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a silicon carbide trench gate MOSFET and a manufacturing method thereof. Background technique [0002] The performance of traditional silicon-based semiconductor devices has gradually approached the physical limit of materials, and the third-generation power semiconductor devices using SiC materials are used in high-power density and high-efficiency devices due to their excellent high frequency, high voltage, and strong thermal conductivity. Has a strong appeal. SiC MOSFET devices are gradually used in application scenarios such as electric vehicles and photovoltaic inverters due to their easy driving and high switching frequency. SiC MOSFET devices are mainly right-plane gate double-diffused SiC MOSFETs and trench gate MOSFETs. Compared with the planar gate MOSFET, the trench gate MOSFET eliminates the resistance of the JFET region, and at the same time has a higher channel density, w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/04
CPCH01L29/7813H01L29/0615H01L29/0619H01L21/0445H01L29/66068H01L29/0623H01L29/0878H01L29/41766H01L29/0696H01L29/1608H01L29/1095H01L29/42376H01L21/0465H01L29/063
Inventor 盛况任娜徐弘毅江崇瑜
Owner ZHEJIANG UNIV HANGZHOU GLOBAL SCI & TECH INNOVATION CENT
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