Silicon carbide trench gate MOSFET and manufacturing method thereof
A technology of silicon carbide trench and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve the effects of reducing on-resistance, reducing electric field, and reducing electric field of gate dielectric
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[0045] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that the embodiments described here are only for illustration, not for limiting the present invention. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be understood by one of ordinary skill in the art that these specific details are not required to practice the present invention. Additionally, in some embodiments, well-known circuits, materials or methods have not been described in detail in order not to obscure the present invention.
[0046] Throughout this specification, reference to "one embodiment," "an embodiment," "an example," or "example" means that a particular feature, structure, or characteristic described in connection with the embodiment or example is included in the present invention. In at least one em...
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