Insulated gate bipolar transistor (IGBT) device with positive temperature coefficient emitter ballast resistance
A technology of positive temperature coefficient and ballast resistance, which is applied in the manufacture of electrical components, semiconductor devices, semiconductor/solid-state devices, etc. The problem of high doping concentration can improve the short-circuit capability, increase the EBR resistance, and reduce the forward voltage drop.
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[0021] An IGBT device with positive temperature coefficient emitter ballast resistance, its layout structure is as follows Figure 4 As shown, the longitudinal section structure diagram of the corresponding A-A' unit and B-B' unit line in the layout unit is as follows Figure 5 , 6 shown, including P + Collector area 7, located at P + The metal collector electrode 8 and N on the back of the collector region 7 - Drift zone 5, located in N - Drift Zone 5 and P +The N-type buffer layer 6 between the collector regions 7; the N - The middle region of the top layer of the drift region 5 is the P-type base region 4, and the P-type base region 4 has N + Emitter 11, N + Transmitter area 11 is located by N + The contact hole 3 at the center of the emitter region 2 is connected to the metal emitter 9; the IGBT device also includes a gate structure, the gate structure is composed of a polysilicon gate electrode 1 and a gate oxide layer in contact with each other, wherein the gate ...
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