Field effect transistor gas sensor and array preparation method thereof

Abstract

The invention discloses a field effect transistor gas sensor and an array preparation method thereof. The field effect transistor (FET) gas sensor is a gate-sensitive FET gas sensor with a gate electrode modified by quantum dots, and a gate-sensitive electrode layer (5) of the FET gas sensor is of a two-layer composite structure or of a single-layer structure made of a composite material. The two-layer composite structure comprises a metal film layer and a quantum dot layer deposited on the surface of the metal film layer. The single-layer structure made of a composite material is specificallya single-layer structure made of a composite material formed by combining quantum dots and a metal or metalloid material. According to the invention, improvement is made on the internal composition and structure of the gate-sensitive FET, the corresponding preparation method and the like, quantum dots are used as a gate electrode and a gas sensitive layer at the same time, and the bias voltage ofthe gate electrode and the channel modulation effect are regulated and controlled by utilizing the adsorption characteristic of a quantum dot gate-sensitive electrode to different gases. A room-temperature gas sensor with high sensitivity, low power consumption and high selectivity can be obtained, and low-concentration target gases (such as H2) can be detected.

Description

technical field

[0001] The invention belongs to the technical field of semiconductor gas sensors, and more specifically relates to a field effect transistor gas sensor and a preparation method thereof. The gas sensor uses quantum dots as a field effect transistor (FET) ) gas sensor is a gate sensitive FET gas sensor. Background technique

[0002] Gas sensors are one of the most effective ways to obtain gas information in real time and in situ, and play an irreplaceable and important role in environmental protection, security alarm and other fields. At present, gas sensors are limited by sensitivity, integration and power consumption, and it is difficult to improve the applicability and reliability of multi-component complex atmosphere environments. Gas sensors based on field effect transistors (FETs) can operate under low current and low voltage conditions, which is conducive to the integration of silicon-based arrays, and has become one of the research hotspots in the fiel...

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