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Preparation method of improving semiconductor laser reliability

A laser and semiconductor technology, applied to the structure of the active region, etc., can solve the problems of semiconductor laser lateral light mode disorder, laser transverse mode and longitudinal mode change, etc., to achieve easy operation, improve device reliability, and increase COD threshold Effect

Active Publication Date: 2016-10-05
Shandong Huaguang Optoelectronics Co. Ltd.
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Problems solved by technology

[0011] Some patents in the above documents only provide one of the methods for removing the gallium arsenide ohmic contact layer and the window structure of the non-implanted region other than the ridge-shaped mesa, and the method of introducing the window structure of the non-implanted region given by other patents will lead to The change of the refractive index of the shaped waveguide makes the lateral light mode of the semiconductor laser disorder, resulting in the change of the transverse mode and longitudinal mode of the laser.

Method used

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  • Preparation method of improving semiconductor laser reliability
  • Preparation method of improving semiconductor laser reliability
  • Preparation method of improving semiconductor laser reliability

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Embodiment 1

[0045] The epitaxial layer of the selected chip is a GaAs / GaInP selective etching material structure. The semiconductor laser tube core resonator has a length of 1500 μm and a width of 500 μm, a ridge waveguide width of 100 μm, and double grooves on both sides of the ridge. The double-groove ridge waveguide is fabricated by method of etching.

[0046] A preparation method for improving the reliability of a semiconductor laser, which adopts one-time etching to simultaneously remove the ohmic contact layer other than the ridge-shaped mesa of the semiconductor laser, and introduces a non-implantation region window structure; the preparation method for improving the reliability of the semiconductor laser includes specific steps as follows :

[0047] (1) On the substrate 9, grow an N-type lower confinement layer 8, a lower waveguide layer 7, an active region 6 with a quantum well structure, an upper waveguide layer 5, a P-type upper confinement layer 4, and an ohmic contact layer 3...

Embodiment 2

[0059] A kind of preparation method that improves the reliability of semiconductor laser as described in embodiment 1, its difference is that,

[0060] In steps (1)-(2), the window of the quantum well mixed region is prepared on the epitaxial wafer, and the active region of the window region is mixed by zinc expansion or other methods; wherein the non-implanted region window structure 11 is engraved on the quantum well In the center of the window in the cluttered area.

[0061] On the epitaxial wafer, a rectangular pattern arranged periodically is photo-etched, wherein the length L2 of the rectangular pattern is 1450 μm, the width L1 is 120 μm, the longitudinal period T2 is 1500 μm, and the lateral period T1 is 500 μm; the ohmic contact layer outside the rectangular pattern is removed by etching , exposing the P-type upper confinement layer, removing the ohmic contact layer other than the ridge-shaped mesa and introducing the non-implantation region window structure 11; wherei...

Embodiment 3

[0063] A preparation method for improving the reliability of a semiconductor laser as described in Example 1, the difference is that the selected chip epitaxial layer is a non-selective etching material structure of GaAs / AlGaAs, when the ohmic contact layer and the P-type The two-layer structure of the confinement layer is non-selective etching, or the ridge mesa is directly prepared by dry etching, then the size of the rectangular figure is: the width L1 of the rectangular figure ≤ the width of the ridge mesa of the semiconductor laser, the length of the rectangular figure L2 = (the resonant cavity length of the semiconductor laser chip - the width of the window structure in the non-implanted region). The length of the semiconductor laser die resonator is 2000 μm, the width is 500 μm, the width of the ridge waveguide is 200 μm, and the width of the double grooves on both sides of the ridge is 30 μm. The double groove ridge waveguide is made by wet etching method.

[0064] (1)...

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Abstract

A preparation method for improving the reliability of a semiconductor laser, which adopts one-time etching to simultaneously remove the ohmic contact layer other than the ridge-shaped mesa of the semiconductor laser, and introduces a non-implantation region window structure. The present invention is based on the Schottky contact principle between the P electrode and the epitaxial layer of the chip, and simultaneously removes the ohmic contact layer other than the ridge-shaped mesa and the ohmic contact layer at the cavity surface through a single etching process to introduce a non-implantation region window structure to form a Schottky The base contact layer achieves the purpose of preventing leakage on both sides of the double channel region in the laser, improving device reliability and increasing the COD threshold. The invention only adopts one-time photolithography process, has simple preparation process, wide application range and strong compatibility, and can be combined with other special processes to further improve the performance of semiconductor lasers.

Description

technical field [0001] The invention discloses a preparation method for improving the reliability of a semiconductor laser, and belongs to the technical field of semiconductor laser manufacture. technical background [0002] Since the advent of semiconductor lasers in the 1860s, the rapid development of semiconductor lasers has attracted worldwide attention. Today, high-power semiconductor lasers have been widely used in pumping solid-state lasers, optical fiber communications, material processing, medical treatment, and laser printing due to their advantages of high efficiency, high power, and high reliability. At the same time, with the continuous expansion of new applications, the requirements for high-power semiconductor lasers are also increasing. [0003] Among them, how to achieve high power while ensuring or even improving reliability has become a key issue facing the further development of high-power semiconductor laser technology industry and market applications. ...

Claims

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Application Information

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IPC IPC(8): H01S5/34
Inventor 刘欢沈燕徐现刚
Owner Shandong Huaguang Optoelectronics Co. Ltd.
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