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A high-power semiconductor laser based on PT Bragg reflection waveguide and its preparation method

A Bragg reflection, semiconductor technology, used in semiconductor lasers, lasers, laser parts and other directions, can solve the problems of complex manufacturing process, difficult beam coupling, unstable lasing beam, etc., achieve high COD threshold, improve injection efficiency, Beneficial for heat dissipation

Active Publication Date: 2019-09-27
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, tapered lasers and angled-grating distributed feedback lasers, but the lasing beams of the former are unstable, and the manufacturing process of the latter is complicated, and the beams of the two are difficult to be effective. coupled into fiber
Single transverse-mode lasers based on modified Bragg-like waveguides can achieve high power output and circular far-field output, but these structures require longitudinal cavity lengths on the order of millimeters

Method used

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  • A high-power semiconductor laser based on PT Bragg reflection waveguide and its preparation method
  • A high-power semiconductor laser based on PT Bragg reflection waveguide and its preparation method
  • A high-power semiconductor laser based on PT Bragg reflection waveguide and its preparation method

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Effect test

Embodiment 1

[0047] A high-power semiconductor laser based on PT Bragg reflective waveguide, such as figure 1 As shown, including InP substrate 1 and InP cladding layer 2, InP substrate 1 and InP cladding layer 2 are provided with a low refractive index central cavity 3 and PT Bragg reflection grating regions 5 located on both sides of the low refractive index central cavity 3, Both the low-refractive-index central cavity 3 and the PT Bragg reflection grating area 5 run through the entire z-axis, such as figure 2 shown;

[0048] The low-refractive-index central cavity 3 is formed by wrapping a high-refractive-index strip waveguide with a low-refractive-index material, and the PT Bragg reflection grating region 5 includes a quantum well structure.

Embodiment 2

[0050] A high-power semiconductor laser based on PT Bragg reflection waveguide, the structure is as shown in Embodiment 1, the difference is that the InP substrate 1 is the lower end face and the upper end face of the InP cladding layer 2 is provided with a contact electrode 4, such as figure 2 As shown, the upper and lower bottom surfaces in the y direction are the contact electrodes 4, from which the current is injected.

Embodiment 3

[0052] A high-power semiconductor laser based on PT Bragg reflection waveguide, the structure is as shown in embodiment 2, the difference is that the low refractive index central cavity 3 is made of SiO 2 The material 3-1 wraps the InAlGaAs strip waveguide 3-2, and the effective refractive index of the low-refractive index central cavity 3 is lower than that of the PT Bragg reflection grating regions on both sides.

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PUM

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Abstract

The invention relates to a high-power semiconductor laser based on PT Bragg reflection waveguide and a preparation method thereof, and belongs to the semiconductor laser technology. The device comprises an InP substrate and an InP cladding layer, wherein a low-refractive-index central cavity and a PT Bragg reflection grating region on both sides of the low-refractive-index central cavity are arranged in the InP substrate and the InP cladding layer; The low refractive index central cavity is composed of a low refractive index material wrapped in a high refractive index strip waveguide, and thePT Bragg reflective grating region includes a quantum well structure. At that same time, the lase has the advantages of high energy conversion efficiency (PCE), high COD threshold value, low lase emission threshold value, easy heat dissipation and the like.

Description

technical field [0001] The invention relates to a high-power semiconductor laser based on a PT Bragg reflection waveguide and a preparation method thereof, belonging to the technical field of semiconductor lasers. Background technique [0002] Due to their small size, light weight, reliable operation, and high efficiency, high-power semiconductor lasers have been widely used in laser communications, solid-state laser laser light sources, optical storage, optical gyroscopes, laser printing, ranging, and radar. [0003] In general, high-power lasers are mostly end-face emitting, because this method is simple to manufacture and can ensure the laser is horizontally single-mode, which is conducive to fiber coupling. The maximum output power that a high-power laser can achieve mainly depends on the catastrophic optical damage (COD), which is caused by the semiconductor junction being overloaded due to exceeding the power density and absorbing too much light energy generated by the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/187H01S5/343
Inventor 李俣彭瑞宏黄卫平
Owner SHANDONG UNIV
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