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A semiconductor laser with a new near-cavity surface current non-injection region structure and its manufacturing method

A laser, non-injection technology, used in semiconductor lasers, lasers, laser parts, etc., can solve the problems of serious beam divergence and lack of restrictions, and achieve the effects of simple preparation process, suppression of divergence, and improvement of COD threshold.

Active Publication Date: 2016-04-06
BEIJING UNIV OF TECH
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Problems solved by technology

The non-implantation area on the cavity surface is realized by combining the passivation of the dielectric near the cavity surface. This method can not only improve the anti-COD ability of high-power semiconductor lasers, but also is basically the same as the conventional process without adding cumbersome process steps, but This method makes the non-injection window area lack the limitation of the beam in the lateral direction, and the divergence of the beam in the horizontal direction is serious

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  • A semiconductor laser with a new near-cavity surface current non-injection region structure and its manufacturing method
  • A semiconductor laser with a new near-cavity surface current non-injection region structure and its manufacturing method
  • A semiconductor laser with a new near-cavity surface current non-injection region structure and its manufacturing method

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Embodiment Construction

[0027] The present invention will be further described below in conjunction with the accompanying drawings.

[0028] like figure 1 Shown is a schematic structural diagram of a semiconductor laser with a new near-cavity surface current non-injection region structure, which includes a substrate 1, a buffer layer 2, a lower confinement layer 3, a lower waveguide Layer 4, active layer 5 with quantum well structure, upper waveguide layer 6, second upper confinement layer 7, etch stop layer 8, first upper confinement layer 9, ohmic contact layer 10, electrical insulating medium layer 11, front Electrode 12 and back electrode 13; wherein substrate 1, buffer layer 2, lower confinement layer 3, lower waveguide layer 4, active layer 5 with quantum well structure, upper waveguide layer 6, second upper confinement layer 7, etch The stop layer 8, the first upper confinement layer 9, and the ohmic contact layer 10 are adjacent to each other from bottom to top, and the four sides of the ohm...

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Abstract

The invention relates to a semiconductor laser unit with a novel near-cavity-surface current non-injection region structure and a manufacturing method. The semiconductor laser unit comprises a substrate, a buffer layer, a lower limiting layer, a layer waveguide layer, an active layer with a quantum well structure, an upper waveguide layer, a second upper limiting layer, an etch-stopping layer, a first upper limiting layer, an ohmic contact layer, an electrical-insulating dielectric layer, a front-side electrode and a back-side electrode. A COD threshold value of the semiconductor laser unit is increased, so that the semiconductor laser unit is high in power output and reliability; a horizontal divergence angle of a light beam of can be restrained, and quality of the light beam is improved; injection of the current is enabled to be more concentrated, and conversion efficiency is higher; in addition, the semiconductor laser unit is simple in manufacturing and convenient to manufacture.

Description

technical field [0001] The invention relates to a novel cavity-entry surface current non-injection region structure, which belongs to the field of semiconductor lasers and manufacturing methods, in particular to a semiconductor laser with a novel near-cavity surface current non-injection region structure and a manufacturing method. Background technique [0002] High-power semiconductor lasers are widely used in pumping solid-state lasers, printing, material processing, communication, etc., mainly due to their high conversion efficiency, high reliability and long life. With the continuous expansion of practical applications, higher requirements are put forward for the performance of high-power semiconductor lasers. It has always been important to increase the output power of semiconductor lasers, prolong the service life of semiconductor lasers, and improve the beam quality of semiconductor lasers. direction. [0003] The basic working principle of the semiconductor laser is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/22H01S5/227H01S5/10H01S5/024H01S5/028
Inventor 崔碧峰王晓玲张松凌小涵
Owner BEIJING UNIV OF TECH
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