Fabrication method of a ridge-type GaAs-based laser with an asymmetric injection window

Abstract

The invention relates to a preparation method of a ridge-type GaAs-based laser with an asymmetric injection window, which belongs to the technical field of semiconductor laser preparation. and the ohmic contact layer are all etched, and then the ohmic contact layer on the ridge structure in the window area is etched away, and then the area of ​​the waveguide layer is etched from all sides except the ridge structure in the window area, and the regular Then use PECVD and photolithography to prepare the current injection window in the ridge-shaped light-emitting area. Finally, the prepared sample is formed into a laser through steps such as electrode deposition, thinning, alloying, and packaging. The divergence angle of the spot pattern is changed by changing the refractive index of the waveguide layer, which limits the absorption of light near the cavity surface, effectively improves the COD threshold of high-power semiconductor lasers, restricts the divergence angle, and improves the quality of the spot.

Description

technical field [0001] The invention relates to a preparation method of a ridge-type GaAs-based laser with an asymmetric injection window, belonging to the technical field of semiconductor lasers. Background technique [0002] Since the advent of semiconductor lasers, they have been favored in various fields due to their small size, high power, long life, and convenient use. High-power semiconductor lasers have the advantages of small size, light weight, high efficiency, wide band coverage, and easy integration. They are widely used, and higher requirements are placed on their output power and beam quality performance. In the process of increasing the output power of high-power semiconductor lasers, the occurrence of optical catastrophic damage (COD) on the cavity surface has become one of the main limiting factors. Optical catastrophe damage (COD) on cavity surface Because the cavity surface of the laser is located at the edge of the heat sink, the heat dissipation is poor...

AI Technical Summary

Problems solved by technology

The aforementioned technologies have adopted a series of measures to increase the initial bandgap of the cavity surface area to improve the laser’s ability to resist COD, but neglected the control of the divergence angle. After the anti-COD ability increases, the divergence angle will change, and the divergence angle will affect the later use of the laser. effect plays a more important role

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