Preparation method of ridge-type GaAs-based laser with asymmetric injection window

A laser, asymmetric technology, applied in the structure of the active area, the structure of the optical waveguide semiconductor, etc., can solve the problem of ignoring the control of the divergence angle, and achieve the effect of suppressing optical catastrophe damage, reducing the spot pattern, and improving the COD threshold.
CN111755949AActive Publication Date: 2020-10-09潍坊华光光电子有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
潍坊华光光电子有限公司
Publication Date
2020-10-09

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Abstract

The invention relates to a preparation method of a ridge-type GaAs-based laser with an asymmetric injection window, and belongs to the technical field of semiconductor laser preparation. The method comprises the following steps: corroding a ridge-shaped structure on the surface of an epitaxial wafer; completely corroding the P limiting layer and the ohmic contact layer outside the ridge-shaped structure; etching off the ohmic contact layer on the ridge-shaped structure of the window region; corroding four sides of the window area except the ridge-shaped structure to the area of the waveguide layer; preparing a pattern in a regular shape through photoetching, corrosion and other methods, then preparing a current injection window in a ridge-shaped light-emitting area through PECVD and photoetching processes, and finally enabling a prepared sample to be subjected to the working steps of electrode deposition, thinning, alloying, packaging and the like to form the laser. The divergence angle of the light spot pattern is changed through the change of the refractive index of the waveguide layer, the absorption of light near the cavity surface is limited, the COD threshold of the high-power semiconductor laser is effectively improved, the divergence angle is restrained, and the light spot quality is improved.
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Description

Technical field

[0001] The invention relates to a method for preparing a ridge GaAs-based laser with an asymmetric injection window, and belongs to the technical field of semiconductor lasers. Background technique

[0002] Since the advent of semiconductor lasers, due to its small size, high power, long life, and easy use, it has been favored in various fields. High-power semiconductor lasers have the advantages of small size, light weight, high efficiency, wide range of coverage, easy integration, etc., are widely used, and higher requirements are put forward for their output power and beam quality performance. In the process of increasing the output power of high-power semiconductor lasers, the appearance of cavity surface optical catastrophic damage (COD) has become one of the main limiting factors. Cavity surface optical catastrophic damage (COD) Because the laser cavity surface is located at the edge of the heat sink, the heat dissipation is poor. The electron-hole pairs ge...

Claims

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