Luminous unit and device of semiconductor laser diode

Abstract

The invention discloses a luminous unit and a luminous device of a semiconductor laser diode. The power of the output laser of the luminous unit is more than 0.2W. The structure of the luminous unit comprises a first limiting layer, a first waveguide layer, a quantum well layer, a second waveguide layer and a second limiting layer from bottom to top, wherein the first limiting layer and the second limiting layer are used for forming a PN junction to perform current carrier input; the thicknesses of the first waveguide layer and the second waveguide layer are between 400 and 600 nanometers, and the first waveguide layer and the second waveguide layer are used for forming a laser transmission channel; and the quantum well layer serving as an active area generates laser. By increasing the thicknesses of the waveguide layers in the luminous unit, the catastrophic optical damage (COD) threshold value of the semiconductor laser diode can be effectively improved.

Description

technical field [0001] The invention relates to the technical fields of microelectronics and optics, in particular to a high-power semiconductor laser diode light-emitting unit and a semiconductor laser diode device. Background technique [0002] In the prior art, the waveguide thickness of the 808nm high-power semiconductor laser diode array (High Power Laser Diode Array, HP LDA for short) is generally about tens of nanometers in consideration of the influence of its photoelectric characteristics. [0003] In the process of realizing the present invention, the inventor realized that the prior art has the following technical defects: the thinner waveguide layer makes the reliability of the 808-HP LDA relatively weaker in harsh working environments. Weak reliability is mainly reflected in: the threshold of photocatastrophic optical damage (COD) is low, and the tolerable rated current fluctuation is not large; while the working life of 808-HP LDA will be significantly reduced ...

AI Technical Summary

Problems solved by technology

[0003] In the process of realizing the present invention, the inventor realized that the prior art has the following technical defects: the thinner waveguide layer makes the reliability of the 808-HP LDA relatively weak under harsh working environments

Weak reliability is mainly reflected in: the threshold of Catastrophic Optical Damage (COD) is low, and the tolerable rated current fluctuation is not large; while the working life of 808-HP LDA will be significantly reduced due to the occurrence of COD

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