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Method for producing high power gallium arsenic/aluminum gallium arsenic laser non-absorption window by AlN

A laser, aluminum gallium arsenic technology, applied in the field of semiconductor optoelectronic devices, can solve the problems of low thermal conductivity and high thermal conductivity

Inactive Publication Date: 2008-07-16
CHANGCHUN UNIV OF SCI & TECH
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  • Abstract
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Problems solved by technology

In addition, at present, the insulating layer in laser manufacturing mostly uses SiO 2 film, due to SiO 2 The low thermal conductivity of the material will lead to the self-heating effect of the device, while aluminum nitride has the characteristics of high resistivity, low thermal expansion coefficient, high hardness, and good chemical stability. Unlike general insulators, its thermal conductivity High rate (100-270W / m K), is Al 2 o 3 5-10 times that of SiO 2 200 times of

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  • Method for producing high power gallium arsenic/aluminum gallium arsenic laser non-absorption window by AlN

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Embodiment Construction

[0012] Please refer to Figure 1. The method of using AlN to make a non-absorbing window of a high-power GaAs / AlGaAs laser is: the original material is a GaAs / AlGaAs epitaxial wafer, and the epitaxial wafer includes a substrate 2 and an epitaxial layer 3 , the depth of the active region 4 from the surface is 1.7 microns; on the window region 6 and the implant region 7, use photolithography to cover the regions 10, 13 and 14 with photoresist AZ-1350, and remove the light from the regions 11 and 12. Resist; use etching solution (sulfuric acid: water: hydrogen peroxide = 9: 4: 4) to etch 0.8-1.2 microns in areas 11 and 12; use reactive magnetron sputtering method to grow on the epitaxial wafer surface at 200-300 °C 0.4-0.8 micron AlN8; use acetone to ultrasonically clean the photoresist and the AlN layer on the regions 10, 13, 14; and then use the photoresist AZ-1350 to cover the regions 10, 11, 12 and 14, remove the photoresist in area 13; use etching solution (sulfuric acid: wat...

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Abstract

The invention relates to a method for using AIN to produce a high-power GaAs / AlGaAs laser non-absorbing window, belonging to the semiconductor photoelectronic device technical field. The invention utilizes the characteristics of AIN material of high thermal conduction, small thermal expansion coefficient, high electric resistivity, high transmission and so on; an AIN film is utilized to form the high-power GaAs / AlGaAs laser non-absorbing window which is simple and effective, and replaces SiO2 to be taken as an insulating film or a cavity surface antireflection coating. The method has simple technology and low cost, can improve COD threshold value of a laser and prolong the life-span of a device. The technical proposal of the invention is suitable for production of high-power GaAs / AlGaAs laser non-absorbing windows with any strip width.

Description

technical field [0001] The invention discloses a method for making a non-absorption window of a high-power GaAs / AlGaAs laser with AlN, belonging to the technical field of semiconductor optoelectronic devices. Background technique [0002] Optical catastrophic damage (COD) on the cavity surface severely limits the output power and device lifetime of semiconductor lasers. In order to improve the COD threshold, a non-absorbing window is formed at the front and rear cavity surfaces of the laser. The band gap at the window is larger than that of the internal working medium. Photons pass through here and are not absorbed, thereby avoiding temperature rise. The methods for forming non-absorbing windows mainly include multiple epitaxy and induced disorder, but these two methods are more complicated in process and higher in cost. The invention proposes a non-absorbing window structure with simple process and suitable for lasers with various stripe widths. In addition, at present, t...

Claims

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Application Information

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IPC IPC(8): H01S5/16
Inventor 刘春玲乔忠良张晶么艳平薄报学高欣王玉霞
Owner CHANGCHUN UNIV OF SCI & TECH
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