Three-dimensional stacked phase change memory and preparation method thereof

Abstract

The invention belongs to the technical field of microelectronic devices and memories, and discloses a three-dimensional stacked phase change memory and a preparation method thereof. The preparation method specifically comprises the following steps of preparing a multi-layer structure on which a horizontal electrode layer and an insulating layer are crossly stacked, on a substrate; then etching toform a groove and a discrete three-dimensional strip-shaped electrode; filling an insulating medium in the groove, forming small holes in the boundary area of the three-dimensional strip-shaped electrode and the insulating medium, sequentially depositing a phase change material on the walls of the small holes, and filling an electrode material in the small holes to prepare a vertical electrode, thereby obtaining the multi-layer stacked three-dimensional stacked phase change memory. According to the present invention, by improving the whole flow process of the preparation method, a three-dimensional phase change memory array can be established by utilizing the vertical electrode structure, and compared with the prior art, the problems of complex multi-layer stacking steps, high process implementation difficulty, unit size miniaturization and the like of an existing three-dimensional stacked phase change memory in process preparation, can be effectively solved.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices and memories, and more specifically relates to a three-dimensional stacked phase-change memory and a preparation method thereof. Background technique [0002] The continuous growth of the total amount of data makes the computer put forward higher requirements for the read and write speed, total capacity, energy consumption and stability of the memory. The size of the existing DRAM has reached the technological limit of the manufacturing level, and the influence of various microscopic effects will become more and more obvious in the process of size reduction, so the traditional DRAM technology is facing difficulties in many aspects. A new type of memory, nonvolatile memory, offers a new way to expand computer memory. As the mainstream non-volatile memory in the market today, flash memory will not lose the data stored in it even in the event of a sudden power failure. However, the ...

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Problems solved by technology

[0006] In view of the above defects or improvement needs of the prior art, the purpose of the present invention is to provide a three-dimensional stacked phase change memory and its preparation method, wherein by improving the overall flow process of the preparation method, the establishment of a three-dimensional Compared with the prior art, the phase-change memory array can effectively solve the problems of complex multi-layer stacking steps, difficult process realization and unit size reduction in the process preparation of the existing three-dimensional stacked phase-change memory devices; the present invention adopts The cross structure of horizontal electrodes and vertical electrodes can realize multi-layer stacking in the vertical direction. The characteristic size of the phase change unit is small and the surface is relatively flat, which is conducive to stacking more layers; it is beneficial to reduce the operating current of the unit phase change. reduce power consumption

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