52 results about "Straight electrode" patented technology

A variable resistance memory device includes vertical electrodes vertically projecting from a substrate, first horizontal electrodes stacked along the vertical electrodes, second horizontal electrodes stacked along the vertical electrodes, and a variable resistance layer interposed between the vertical electrodes and the first and second horizontal electrodes, wherein the first and second horizontal electrodes are arranged in directions crossing with each other.

The invention discloses a power battery pack arrangement, connection and assembly structure, which comprises a shell, cylindrical batteries, electrode connecting sheets and fixed partition boards, wherein every three cylindrical batteries form a module and are connected in parallel by the star-like electrode connecting sheets and arranged in two rows, and the cylindrical batteries are staggered complementarily in two rows; and two ends of the batteries are correspondingly fixed and clamped in circular positioning caps inside left and right inner positioning plates. The wall thickness of the circular positioning caps inside the inner positioning plates is 1 to 2 millimeters, and the peripheries of all the circular positioning caps are tangential. The anodes and the cathodes of the adjacentmodules of each row are inverted, and the polarities of the first modules of the adjacent rows are opposite. Left and right outer positioning plates are arranged outside the left and right inner positioning plates; the left outer positioning plate is provided with the electrode connecting sheet and limiting grooves of the electrode connecting sheets, two ends of which anodes and cathodes are vertically led out; the anodes and the cathodes of the corresponding modules of the two adjacent rows are connected in series by the straight electrode connecting sheets on the right outer positioning plate; and the inner and outer positioning plates are connected with the shell through the surrounding edges. Groove reinforcing ribs are positioned in the middle of the left and right cover plates of the shell, and end plates at two ends are provided with vents.

A microsystem adapted for dielectrophoretic manipulation of particles in a suspension liquid wherein the microsystem has a channel with channel walls and a longitudinal extension. An electrode arrangement is present which has at least one microelectrode on at least one of the channel walls. This acts to generate a field barrier which crosses the channel at least partly. The microelectrode has a band-shape or has a multitude of straight electrode sections connected to each other. The band-shape has a predetermined curvature or the straight electrode sections are arranged with predetermined different angles so that the field barrier has a predetermined curvature relative to the longitudinal extension of the channel.

The present invention relates to a resistance change memory device and a method for manufacturing the same. According to an exemplary embodiment of the present invention, the resistance change memory device includes: a plurality of horizontal electrodes configured to be stacked at a predetermined interval from each other and extended in a horizontal direction; inter-layer insulating layers configured to each be formed between the plurality of horizontal electrodes; a plurality of vertical electrodes configured to have cross points with the horizontal electrodes by penetrating through the plurality of stacked horizontal electrodes and the inter-layer insulating layers in a vertical direction; and a metal oxide layer configured to have a U-shaped section in a form enclosing the horizontal electrode between the inter-layer insulating layer and the horizontal electrode and to make an oxygen composition ratio of a surface contacting the vertical electrode be higher than that of a surface contacting the horizontal electrode by performing oxygen treatment on the vertical electrode to have threshold switching characteristics and memory switching characteristics.

A resistor type water-level digital sensor belongs to the field of water-level sensors, which comprises a testing circuit and a measurement probe essentially formed by an insulation round pipe, a straight electrode and a bent electrode. The upper end and the lower end of the insulation round pipe are respectively provided with a fixing plug. The lower fixing plug is provided with a water feeding hole communicated with a cavity of the insulation round pipe, and the upper fixing plug is provided with a vent. The bottom ends of the straight electrode and the bent electrode are arranged in the insulation round pipe and fixed on the lower fixing plug. The bent portion of the bent electrode is arranged in the insulation round pipe, and the upper ends of the straight electrode and the bent electrode penetrate the upper fixing plug to be provided with an extending end respectively. The testing circuit of the resistor type water-level digital sensor combines a resistor property of the probe, and enables an observation quantity obtained by the circuit to be in primary linear relationship with height of water levels so as to satisfy continuous equal-accuracy measurement of the water levels.

The invention belongs to the technical field of microelectronic devices and memories, and discloses a three-dimensional stacked phase change memory and a preparation method thereof. The preparation method specifically comprises the following steps of preparing a multi-layer structure on which a horizontal electrode layer and an insulating layer are crossly stacked, on a substrate; then etching toform a groove and a discrete three-dimensional strip-shaped electrode; filling an insulating medium in the groove, forming small holes in the boundary area of the three-dimensional strip-shaped electrode and the insulating medium, sequentially depositing a phase change material on the walls of the small holes, and filling an electrode material in the small holes to prepare a vertical electrode, thereby obtaining the multi-layer stacked three-dimensional stacked phase change memory. According to the present invention, by improving the whole flow process of the preparation method, a three-dimensional phase change memory array can be established by utilizing the vertical electrode structure, and compared with the prior art, the problems of complex multi-layer stacking steps, high process implementation difficulty, unit size miniaturization and the like of an existing three-dimensional stacked phase change memory in process preparation, can be effectively solved.

An avalanche photodiode including a semiconductor substrate of a first conductivity type, an avalanche multiplication layer, an electric field control layer, a light absorption layer, and a window layer wherein the layers are laid one on another in this order on a major surface of the semiconductor substrate, an impurity region of a second conductivity type in a portion of the window layer, and a straight electrode on the impurity region and connected to the impurity region, the straight electrode being straight as viewed in a plan view facing the major surface of the semiconductor substrate.

An ultrasonic transducer comprises a stack (9) of multiple flat electrodes (3) between which are interposed ceramic wafers (2) of substantially the same surface area as the electrodes (3), the stacked contours of the ceramic wafers and electrode wafers defining substantially flat or cylindrical side faces (21) of the stack. The method of manufacturing this transducer comprises the following steps: a ceramic wafer (2) and an electrode wafer (3) are alternately stacked, placing between each ceramic wafer and its two neighbouring electrodes a composition (6) of which at least 75% by weight, and preferably at least 80% by weight, is comprised of silver nanoparticles having a grain size of smaller than or equal to 80 nanometres, and preferably of smaller than or equal to 60 nanometres; and the stack is compressed by heating to a temperature of less than or equal to 280 DEG C, and preferably of between 200 DEG C and 250 DEG C.

Provided is a vertical electrode structure using a trench and a method of manufacturing the vertical electrode structure. The method of forming a vertical electrode structure using a trench includes steps of: forming the trench on a predetermined region of a semiconductor substrate; and forming electrode layers in predetermined regions of inner and outer portions of the trench. In this manner, the electrode deposition in the vertical direction is established by using the trench, so that it is possible to form a deposited electrode having a size of several hundred nm or less by a short processing time and a low processing cost.

The invention discloses a wave-shaped three-dimensional steel mesh welding device. The wave-shaped three-dimensional steel mesh welding device comprises a rack, a horizontal wire automatic straightening wire feeding cut-off machine, upper wire square electrodes, upper wire straight electrodes, lower wire square electrodes, lower wire straight electrodes, an upper electrode stroke control mechanism and lower electrode stroke control mechanisms; the horizontal wire automatic straightening wire feeding cut-off machine is installed on the right side of the rack, the upper electrode stroke control mechanism is installed at the top of the rack, the lower electrode stroke control mechanisms are installed on the bottom plate of the rack, the lower wire square electrodes and the lower wire straight electrodes are installed above the lower electrode stroke control mechanisms, and the upper wire square electrodes and the upper wire straight electrodes are installed under the upper electrode stroke control mechanism. The positions of the upper wire square electrodes, the upper wire straight electrodes, the lower wire square electrodes and the lower wire straight electrodes are adjustable, products with different mesh specifications and different kinds can be produced, the device can be controlled by the upper electrode stroke control mechanism and the lower electrode stroke control mechanisms, the degree of automation is high, the failure rate is low, and the work efficiency is high.

An avalanche photodiode including a semiconductor substrate of a first conductivity type, an avalanche multiplication layer, an electric field control layer, a light absorption layer, and a window layer wherein the layers are laid one on another in this order on a major surface of the semiconductor substrate, an impurity region of a second conductivity type in a portion of the window layer, and a straight electrode on the impurity region and connected to the impurity region, the straight electrode being straight as viewed in a plan view facing the major surface of the semiconductor substrate.

The invention discloses a device and method using the bidirectional ferry type combined technology to remedy soil polluted by PCBs (polychlorinated biphenyls).The device is sealed during the whole remedying process and mainly comprises an electric actuator, a PRB reaction wall absorption device, a surfactant adding device and an ultrasonic device.Three electrodes are sequentially evenly mounted in the direction parallel with the horizontal plane of soil in a polluted area from top to bottom, the upper electrode and the lower electrodes are arc-shaped electrodes, the middle electrode is a straight electrode, PRB reaction walls and an ultrasonic probe are mounted between every two adjacent electrodes, and spraying devices are mounted on the surface layer of the soil.The device has the advantages that the bidirectional ferry type combined technology is used to treat PCBs pollutants, and pollutants can be effectively removed by using the conversion electrodes and combining the surfactant solubilizing technology, the ultrasonic cavitation technology and the PRB absorption interception technology; the whole treatment process is clean and free of secondary pollution.

The invention relates to a stainless steel sealing specially-shaped electrode for resistance spot welding, which is characterized in that a main body is formed by processing a copper block one time into a half-I shape, the upper end of the main body is in interference fit with a interchangeable straight-rod round electrode head, the lower end of the main body is of a T shape with conicity, and the center of the main body is provided with a cooling water hole. By adoption of the half-I shaped copper main body, the spot welding of a side top plate and a corrugated plate of a vehicle roof is realized, wherein the side top plate and the corrugated plate are located on the half-surrounded part of the lower part of a beam shaped like a Chinese character ''yi''. In addition, the sealing specially-shaped electrode can be interchanged with a lower straight electrode of a pair of C-shaped welding pliers and forms a spot welding loop with an upper straight electrode of the pair of C-shaped welding pliers to meet welding requirements, and the interchange of the sealing specially-shaped electrode with the straight electrodes is easy, quick and labor-saving. Due to the circulating cooling water hole additionally arranged in the specially-shaped electrode, when the specially-shaped electrode is used for the spot welding, welding parameters of a large current and a short time are supplied to the specially-shaped electrode, and a large amount of heat is produced, the specially-shaped electrode is cooled by cooling water timely, so that the spot welding can be carried out continuously, and the reliability and the continuity of the production can be realized.

A three dimensional memory includes flat electrodes, each defining a plane; a vertical electrode, extending essentially along an axis perpendicular to the plane defined by each flat electrode; floating electrodes, each situated between a flat electrode and the vertical electrode; first layers of an insulating material, each flat electrode being separated from the preceding and / or following flat electrode by a first layer of an insulating material; first layers of a first active material, each layer of an active material separating a flat electrode from the floating electrode that is associated therewith; a second layer of a second active material separating the vertical electrode from the floating electrodes. The first active material forms a selector or a memory point and the second active material forms a memory point or a selector. Each flat electrode includes first, second and third sub-layers made of, respectively, first, second and third conductive materials.

The invention belongs to the technical field of current-assisted thermoforming of light-weight high-strength structures, and particularly relates to a current-assisted SPF / DB integrated forming process. According to the integrated forming process, an integrated forming die is adopted for achieving forming of a plate; the die comprises an insulating die body; the insulating die body is provided with a concave cavity and an assembling hole; the assembling hole penetrates through the concave cavity; a vertical electrode is assembled at the assembling hole; the vertical electrode is assembled in the assembling hole and then divides the concave cavity into at least one cavity used for plate forming; and the end face of the end, close to the open end of the concave cavity, of the vertical electrode is used for being attached to a plate so as to be used for electrically heating the area, to be subjected to diffusion connection, of the plate. According to the current-assisted SPF / DB integrated forming process provided by the invention, the temperature of a contact area can be increased, the deformation resistance of the contact area is reduced, healing elimination of interface holes is accelerated by utilizing a current crack healing effect, interface element diffusion is promoted, and low-pressure and short-time rapid diffusion connection of the composite interface can be realized.

A resistive random access memory including a stacked structure, at least one vertical electrode, a selector element, and a plurality of resistance changeable structures is provided. The stacked structure is formed by a plurality of horizontal electrodes and a plurality of first dielectric layers stacked alternately, wherein the stacked structure has at least one channel hole extending through the horizontal electrodes and the first dielectric layers. The vertical electrode is formed in the at least one channel hole. The selector element is formed in the channel hole between the vertical electrode and the stacked structure. The resistance changeable structures are disposed on the surface of each of the horizontal electrodes and are in contact with the selector element in the channel hole.

The invention is directed to a multilayer ceramic capacitor comprising a top surface and an opposing bottom surface and four side surfaces that extend between the top and bottom surfaces, a main body formed from a plurality of dielectric layers and a plurality of internal electrode layers alternately arranged, and external terminals electrically connected to the internal electrode layers wherein a first external terminal is disposed along the top surface and a second external terminal is disposed along the bottom surface. The internal electrode layer includes a first electrode electrically connected to the first external terminal and a second counter electrode electrically connected to the second external terminal, wherein the first electrode includes a central portion extending from the first external terminal toward the second external terminal and wherein the central portion extends 40% to less than 100% a distance from the first external terminal to the second external terminal.

To suppress variation in transistor characteristics due to charging damage to relieve restrictions on design necessary for avoiding the charging damage and improve the degree of freedom in design for increasing semiconductor integration. A semiconductor device includes a vertical electrode formed in a vertical hole extending from an opening portion toward a portion to be connected in a thickness direction of a base, and having a structure in which a barrier metal film and a conductive material are stacked sequentially from a side close to an insulating film exposed to the vertical hole, and a low-resistance film provided to lie between the barrier metal film and the insulating film except a vicinity of the portion to be connected, and having a lower resistance value than a resistance value of the insulating film.

A three-dimensional stacked phase change memory and a preparation method thereof are provided. The method comprises: preparing first horizontal electrodes spaced apart from each other on a substrate; preparing first strip-shaped phase change layers, each having a central gap, between the first horizontal electrodes; preparing first selectors in the central gaps of the first strip-shaped phase change layers; preparing a first insulating layer; preparing second strip-shaped phase change layers at same vertical positions on the first insulating layer; preparing second selectors; then preparing horizontally-oriented insulating holes between the horizontal electrodes; and preparing vertical electrodes between the adjacent insulating holes, thereby forming a multilayer stacked phase change memory with a vertical structure.

The present invention provides an electrode lead. The lead comprises a main body tube and an electrode installed on the main body tube. The electrode comprises a matching portion matched with the main body tube, the electrode also comprises a projection portion connected with the matching portion, and the projection portion protrudes from the outer surface of the main body tube. The electrode of the electrode lead has a projection portion protruding from the main body tube and can improve the effective contact area of the electrode and a target stimulation position compared to a traditional flat and straight electrode to allow the electrode to fully contact the relatively rough organizational interface, increase the effectiveness of the stimulation, reduce the side effect caused by unnecessary big stimulation, improve the energy use efficiency of a pulse generator connected with the electrode wire and increase the service life of a battery of the pulse generator.

A semiconductor memory device and a method of manufacturing the same are provided. The semiconductor memory includes electrode structures that each includes horizontal electrodes stacked on each othera substrate, vertical electrodes between the electrode structures and extending along the horizontal electrodes, first contacts connected to the horizontal electrodes at end portions of the electrodestructures, second contacts connected to upper portions of the vertical electrodes, and a first interconnection structure connected to top surfaces of the second contacts. The first interconnection structure includes first and second sub-interconnection lines. The sub-interconnection lines extend in a first direction and contact the top surfaces of the second contacts. The second sub-interconnection lines extended in a second direction crossing the first direction and contact the first sub-interconnection lines.

The invention relates to a high-voltage large-current electronic switch. The high-voltage large-current electronic switch comprises a driving circuit module, a high-voltage treating module and a thyristor control module which are sequentially connected. The high-voltage large-current electronic switch is characterized in that the driving circuit module comprises a plug J1, a straight electrode pipe circuit, a coil conductor T1 and a DC assistant energy storing circuit; the plug J1 is respectively connected with a triode circuit and the DC assistant energy storing circuit; the triode circuit, the coil conductor T1 and the DC assistant energy storing circuit are sequentially connected. Compared with the prior art, the high-voltage large-current electronic switch has the advantages of being simple in structure, and reliable in performance.

A resistor type water-level digital sensor belongs to the field of water-level sensors, which comprises a testing circuit and a measurement probe essentially formed by an insulation round pipe, a straight electrode and a bent electrode. The upper end and the lower end of the insulation round pipe are respectively provided with a fixing plug. The lower fixing plug is provided with a water feeding hole communicated with a cavity of the insulation round pipe, and the upper fixing plug is provided with a vent. The bottom ends of the straight electrode and the bent electrode are arranged in the insulation round pipe and fixed on the lower fixing plug. The bent portion of the bent electrode is arranged in the insulation round pipe, and the upper ends of the straight electrode and the bent electrode penetrate the upper fixing plug to be provided with an extending end respectively. The testing circuit of the resistor type water-level digital sensor combines a resistor property of the probe, and enables an observation quantity obtained by the circuit to be in primary linear relationship with height of water levels so as to satisfy continuous equal-accuracy measurement of the water levels.

The invention discloses a processing method for a vertical electrode configuration structure of a nanoscale phase-change memory unit, in which a lower electrode material layer, an intermediate phase-change material layer and an upper electrode material layer are sequentially grown according to the procedure; during processing, the upper electrode material is The upper layer and the lower electrode material layer are processed into a partially overlapping upper and lower electrode structure, and the source and drain terminals can be exchanged. For the low-resistance crystal state, by constructing an asymmetric upper and lower electrode structure, compared with the facing vertical electrode structure, the equivalent resistance R is increased, the working current is reduced, the tunneling of large current is avoided, and the device life is prolonged. At the same time, the non-facing area component shunts the series path current, increases the current diffusion in the series process, and also reduces the operating current. The smaller the operating current, the less likely the metastable crystal phase structure will be broken down.

The invention discloses a stacked cylinder type flue lampblack electrostatic purification device which comprises an outer fixing cylinder and an inner electrode adsorption cylinder. The outer fixing cylinder is in a conical shape with a narrow upper part and a wide lower part, the upper part and the lower part of the cylinder wall are provided with insulating devices, and the outer fixing cylinder is internally provided with at least two electrode adsorption cylinders of which the diameters are sequentially decreased. The electrode adsorption cylinders are stacked with the same circle center, the distances between the cylinder walls of the electrode adsorption cylinders are the same, discharging devices are arranged in the gaps of the electrode adsorption cylinders, irregular separators penetrating through the discharging devices are arranged in the gaps, and the upper and lower ends of the electrode adsorption cylinders and the discharge devices are fixed with the insulation devices through the fixing devices. According to the present invention, the straight electrode adsorption cylinders are changed into the conical electrode adsorption cylinders, and the discharge devices parallel to the electrode adsorption cylinders are fixed in the gaps of the electrode adsorption cylinders, so that the ionization range is wider, the lampblack adsorption capacity is improved, and an electric arc phenomenon caused by oil mist dripping of the straight cylinders is avoided.