31 results about "Straight electrode" patented technology

The utility model discloses a nursing head and beauty care equipment. The nursing head comprises a shell and an electrode assembly. A nursing part is formed on the shell, the shell has a first direction and a second direction, the length of the shell in the first direction is larger than that of the shell in the second direction, and the first direction is perpendicular to the second direction; the electrode assembly is at least partially arranged on the nursing part and comprises a plurality of electrode plates, and the electrode plates extend in the first direction of the shell and are arranged at intervals in the second direction. The multiple electrode plates extend in the first direction and are arranged on the nursing part at intervals in the second direction, the contact area between the electrode plates and the nursing part can be increased, the nursing effect and strength are improved when a user is nursed in the first direction, the effects of lifting and tightening the skin are achieved, meanwhile, the multiple electrode plates extrude a fat layer, and therefore the skin can be protected from being damaged. The functions of skin massage and fat reduction can be achieved, and the working efficiency and the nursing effect of the nursing head are improved.

The invention discloses a preparation method of an InGaN full-color Micro-LED device based on ion implantation. The preparation method comprises the following steps: preparing a red InGaN multi-quantum well stacked epitaxial wafer, a green InGaN multi-quantum well stacked epitaxial wafer and a blue InGaN multi-quantum well stacked epitaxial wafer; after a pixel pattern is defined through photoetching, specific ions are injected to form a high-resistance insulating layer, and pixel electrical isolation is achieved; the deep hole is etched to expose the contact area of the light-emitting layer of each color; depositing an insulating dielectric layer and performing back etching, and preparing electrodes through physical vapor deposition and a stripping process and interconnecting the electrodes; and thinning, cutting and packaging to obtain the device. According to the invention, multiple selective etching is replaced by ion implantation, so that quantum well damage is reduced fundamentally, the technological process is simplified, and the luminous efficiency and consistency of the device are improved; the deep hole vertical electrode structure enhances the contact reliability and is beneficial to high-density integration; the pixel density of the device can reach 2000-5000 PPI, the yield is larger than or equal to 88%, and the device is suitable for VR / AR, high-definition display and other scenes and has important application value.

The utility model discloses a processing tool for an internal circular bead of a cabin section part, the shape of an electrode of the processing tool for the internal circular bead of the cabin section part is fit with a processing surface of an inner cavity of a workpiece, and the two processing surfaces are lengthened, so that the abrasion allowance is ensured, the processing tool can be used for a long time, the durability of the electrode is improved, and the requirement of frequently replacing the electrode is reduced. According to the machining tool for the internal fillet of the cabin section part, the center of an electrode is punched and fixed to a screw, the side wall of the electrode can be straightened through the design, alignment and leveling are easy when the electrode touches a workpiece front and back, it can be guaranteed that the electrode is always kept stable in the machining process, and the machining error caused by electrode deviation is reduced; the machining precision is improved, secondary alignment is not needed after the workpieces are inserted according to the positions of the pins, the clamp is suitable for batch machining, the clamping process of the workpieces is simplified, the operation time is shortened, the production efficiency is improved, meanwhile, the position consistency of the workpieces is guaranteed through pin positioning, and the machining precision is further improved.

The invention discloses a dielectric barrier discharge device, air treatment equipment and a control method and control device of the air treatment equipment, which are beneficial to improving sound troubles brought by the dielectric barrier discharge device to users. The dielectric barrier discharge device comprises a dielectric barrier discharge assembly which comprises an internal electrode, an external electrode and a barrier medium which separates the internal electrode from the external electrode, the barrier medium is cylindrical, and the internal space of the barrier medium forms a discharge space; the internal electrode comprises a first electrode and a second electrode which are arranged in parallel, the first electrode is a linear electrode and can be selectively opened and closed, and the second electrode is a spiral electrode; and the power supply module is electrically connected with the internal electrode and the external electrode and is arranged to load voltage to the internal electrode and the external electrode, so that the dielectric barrier discharge component generates dielectric barrier discharge in the discharge space.

Embodiments disclosed herein include electrode configurations for a plasma-enhanced deposition process. In an example, an electrode configuration includes a stack of wafer processing regions aligned along a vertical axis. A plurality of electrodes is surrounding the stack of wafer processing regions. Each one of the plurality of electrodes is extending along the vertical axis.

The application belongs to the technical field of evaporation equipment, and particularly relates to a resistance evaporation mechanism, resistance evaporation equipment and a method, which comprises two support frames arranged symmetrically left and right, each of the support frames comprises a crossbeam located at the middle and electrode fixing plates located at both sides, the electrode fixing plates are perpendicular to the crossbeam, electrodes are fixed on the electrode fixing plates, an evaporation source bracket is arranged in the middle of the two support frames, a crucible is arranged on the bracket, the crucible is cylindrical, and evaporation materials are placed in the crucible. The application improves the evaporation process efficiency and prolongs the service life of the equipment.

This application discloses a method for fabricating InGaN full-color Micro-LED devices based on ion implantation, including fabricating red, green, and blue InGaN multi-quantum-well stacked epitaxial wafers; defining pixel patterns through photolithography, then implanting specific ions to form a high-resistivity insulating layer to achieve pixel electrical isolation; etching deep holes to expose the contact areas of each color emitting layer; depositing an insulating dielectric layer and etching back; fabricating and interconnecting electrodes through physical vapor deposition and lift-off processes; and obtaining the device through thinning, cutting, and packaging. This invention replaces multiple selective etching processes with ion implantation, fundamentally reducing quantum well damage, simplifying the process flow, and improving device luminous efficiency and consistency. The deep-hole vertical electrode structure enhances contact reliability and facilitates high-density integration. The device pixel density can reach 2000-5000 PPI, with a yield ≥88%, making it suitable for VR / AR, high-definition display, and other scenarios, and has significant application value.

The invention provides an octagonal radio frequency quadrupole acceleration cavity single-section cavity, a welding device and a welding method, and relates to the technical field of accelerators. The single-section cavity adopts a four-block design, namely, the single-section cavity is configured to be composed of a first vertical electrode, a first horizontal electrode, a second vertical electrode and a second horizontal electrode; the first vertical electrode and the second vertical electrode are each provided with a protruding structure in the direction facing the interior of the cavity, in other words, the protruding structures are designed to be W-shaped, and the protruding structures are configured to serve as geometric symmetry references to ensure that in the machining process, the machining precision is improved. The degree of symmetry of the first vertical electrode and the second vertical electrode relative to the first horizontal electrode and the second horizontal electrode meets a preset condition; and one of any two contacted electrodes of the first vertical electrode, the first horizontal electrode, the second vertical electrode and the second horizontal electrode is provided with a solder groove for filling solder. Compared with a traditional eight-block type design, the single-section cavity has the advantage that the machining precision of the cavity is greatly improved.

The application provides a nanometer vertical electrode array, a multi-channel nano array electrode and a preparation method of both. The preparation method of the nanometer vertical electrode array is based on a scanning electron microscope and / or a transmission electron microscope in which a nanometer operation robot is installed in a sample chamber, and a precursor metal material is directly written and deposited to form the nanometer vertical electrode array under a near-field and / or far-field electromagnetic field. The preparation method of the nanometer vertical electrode array based on an energy field control adopts the nanometer operation robot, replaces a traditional pick-and-place operation with a direct writing technology, greatly improves the operation speed of a nano structure or even a single atom, and obtains super-high machining precision, so that the speed and machining precision bottleneck of the nanometer robot operation is broken through.

Some embodiments include fabricating a narrow bezel for a projected capacitive (PCAP) touchscreen. Some embodiments include a vertical electrode on a cover glass, coupled to a first set of traces within the narrow bezel, and a first insulating black mask (BM) layer printed on the cover glass, the first insulating black mask layer including a first opening above the electrode terminals of the vertical electrodes. Some embodiments further include portions of conductive black vias (BV) printed in the first opening, coupling the conductive BV to the electrode terminals and a first silver trace in the first set of silver traces. Some embodiments include combining the cover glass with a sensor glass, wherein the first set of silver traces substantially overlaps with a second set of silver traces on the sensor glass within the narrow bezel, wherein the sets of overlapping silver traces are separated by a shielding layer.

The invention discloses a nerve-imitating device with a three-dimensional structure and a manufacturing method of the nerve-imitating device. The disclosed nerve-imitating device with the three-dimensional structure can be a device with the three-dimensional structure capable of carrying out equilibrium propagation nerve-imitating operation, and the nerve-imitating device with the three-dimensional structure can be a device with the three-dimensional structure and capable of carrying out equilibrium propagation nerve-imitating operation. The nerve-imitating device may include: a plurality of synaptic blocks; a plurality of connection members for electrically connecting the plurality of synaptic blocks to each other; and a neuron circuit unit connected between the plurality of synaptic blocks. The plurality of synaptic blocks may each have a three-dimensional structure in which a plurality of vertical phase change memory cells are included. The vertical phase change memory cells may include: a first vertical electrode; a first vertical structure including a phase change material layer surrounding at least a portion of the first vertical electrode; and a plurality of first electrode layers in contact with the outer peripheral surface of the first vertical structure and spaced apart from each other in the vertical direction. The neuron circuit portion may include a bidirectional threshold switching (OTS) device, and a neuron circuit portion may include a bidirectional threshold switching (OTS) device.

Disclosed herein are methods, devices and systems including a first electrode, the first electrode having a first electrode segment, a second electrode segment, and a third electrode segment. The first electrode segment may be coupled to the second electrode segment, and the second electrode segment may be coupled to the third electrode segment. A second electrode may extend parallel to the first electrode. A first dielectric material may be between the first electrode segment and the third electrode segment. A third electrode may contact the first electrode, and the third electrode may extend in a direction orthogonal to the first electrode. The first electrode segment may extend parallel to the third electrode segment.

Disclosed herein are methods, devices and systems including a substrate with a planar surface, a first electrode extending in a first direction orthogonal to the planar surface of the substrate, a second electrode extending in a second direction parallel to the planar surface of the substrate, the second electrode contacting the first electrode, a third electrode extending in the second direction, a first dielectric material between the first electrode and the third electrode, the first dielectric material contacting the first electrode, a second dielectric material between the first electrode and the second electrode, with the first dielectric material between the first electrode and the second dielectric material.

Methods for supporting, aligning, moving and fixing vertical electrodes on an electrolytic cell's bottom block are disclosed. The cell has anodes and cathodes vertically aligned in alternating rows. The method allows mechanically and simultaneously positioning and supporting the electrodes in the cell, by first inserting a bottom end of each electrode within a slot or mortise of a supporting element comprising a first fixing material, such as a glue, before letting it to cure for fixing each electrode to the supporting element. The cell is preferably used for the electrolytic production of a metal, such as aluminum or aluminium, more preferably using inert / oxygen-evolving anodes, for a production of aluminum friendly for the environment. Different fixing materials configured for fixing the vertical electrodes on the support or directly on the cell's bottom, are also described.

The application relates to an arc electrode device for producing a quartz crucible, which comprises an electrode beam composed of three or more graphite electrodes, and the graphite electrodes are connected in sequence by straight graphite electrode segments, graphite curved segments and graphite connecting segments, so that each graphite electrode is in L shape. In the application, the graphite electrodes are changed from straight electrodes into special electrode shapes with outward bending by connecting the graphite curved segments and the graphite connecting segments at the ends of the straight graphite electrodes, so that the high-temperature arc area contour generated after the electrodes are ignited is changed from an elongated shape mainly radiating to the bottom wall of the crucible into a flat shape close to the straight wall of the crucible. Compared with the prior art, the heat radiated to the bottom wall of the crucible by the high-temperature arc can be appropriately reduced, the heat radiated to the straight wall of the crucible is increased, the problems of the r angle being too thick and the bubble belt are relieved, the compensation difference caused by graphite consumption is solved, and the quality stability of the crucible is improved. The application is especially suitable for producing large-size quartz crucibles.

Embodiments disclosed herein include electrode configurations for a plasma-enhanced deposition process. In an example, an electrode configuration includes a stack of wafer processing regions aligned along a vertical axis. A plurality of electrodes is surrounding the stack of wafer processing regions. Each one of the plurality of electrodes is extending along the vertical axis.

The present invention discloses a real-time measurement probe and device for collapse liquid level in a core high-temperature and high-pressure environment. A single liquid level measurement probe is assembled and arranged inside a channel to be measured and does not contact the inner wall of the channel. The liquid level measurement probe includes a bottom support frame, a semi-cylindrical electrode shell, a short cylinder, a straight electrode wire, an inner-cylinder support frame, and a top support frame. The bottom support frame, the semi-cylindrical electrode shell, the short cylinder, the straight electrode wire, the inner-cylinder support frame, and the top support frame are coaxially connected in sequence from bottom to top; the straight electrode wire is located inside the semi-cylindrical electrode shell, and is kept in parallel and non-contact with each other by the bottom support frame, the inner-cylinder support frame, and the top support frame. The semi-cylindrical electrode shell and the straight electrode wire are spaced equally to form a probe body; the straight electrode wire serves as one pole, and the semi-cylindrical electrode shell serves as the other pole, which are led out by wires and connected to a circuit respectively, to form two poles for probe signal transmission, thereby realizing signal transmission and reception.

The present invention discloses a bioelectrochemical electrode and its application in a bioelectrochemical device for treating refractory wastewater. The bioelectrochemical electrode comprises an anode and a cathode arranged opposite to each other, and an insulating plastic barrier layer arranged between the anode and the cathode, wherein the anode, the insulating plastic barrier layer and the cathode are sequentially stacked and bonded together; the anode and the cathode are each formed with at least two arc-shaped sub-electrodes; and the central angle of each arc-shaped sub-electrode in the anode and the cathode is independently 120°-180°; a straight electrode is formed between each pair of adjacent arc-shaped sub-electrodes in the anode and the cathode; the material of the anode and the cathode is stainless steel fiber felt; after application of the bioelectrochemical electrode of the present invention, dead bacteria and the like can be effectively removed under the action of water flow, the formation and stability of electrochemically active bacterial biofilm can be promoted, a higher current density can be obtained, and the biodegradability of the wastewater can be effectively improved.

The present disclosure relates to a sensor. The sensor according to one embodiment of the present disclosure may comprise: a plurality of vertical electrodes elongated vertically and disposed to face each other; a first horizontal electrode disposed below the plurality of vertical electrodes; and a shield electrode disposed below the plurality of vertical electrodes so as to cover the first horizontal electrode from the top thereof, wherein the first horizontal electrode and the shield electrode are disposed to be immersed in a fluid containing at least an oil, a sensing voltage can be applied to a first vertical electrode and the first horizontal electrode, and a ground voltage can be applied to a second vertical electrode and the shield electrode.

The present disclosure relates to a sensor. The sensor of the present disclosure includes a plurality of vertical electrodes which are extended vertically and arranged to face each other; a first horizontal electrode arranged on a lower side of the plurality of vertical electrodes; and a shield electrode arranged on the lower side of the plurality of vertical electrodes so as to cover the first horizontal electrode from an upper side, in which the first horizontal electrode and the shield electrode are arranged to be immersed in a fluid that at least contains oil, a sensing voltage is applied to a first vertical electrode and the first horizontal electrode, and a ground voltage is applied to a second vertical electrode and the shield electrode.

This invention belongs to the field of DC grounding electrode technology, and specifically relates to a tree-shaped DC grounding electrode for smart grids and its design method. The technical solution is as follows: A tree-shaped DC grounding electrode for smart grids includes an electrode comprising a straight electrode trunk, several straight electrode branches located near the trunk, and an annular end electrode located near the other end of each straight electrode branch, with each branch corresponding to an annular end electrode; it also includes a central device or grounding electrode line terminal tower. The electrode is divided into several segments, each segment connected to a feeder cable, which is connected to the central device or grounding electrode line terminal tower via a conductor. This invention provides a tree-shaped DC grounding electrode for smart grids and its design method, ensuring the current discharge effect of the electrode while avoiding problems such as the need for large-scale demolition due to the surrounding of numerous buildings caused by the annular electrode arrangement.

The invention discloses a battery and electric equipment, and the battery comprises a shell which is provided with at least one separation part so as to divide the internal space of the shell into at least two cavities which are arranged side by side along a first direction, the separation part protrudes out of the first side of the shell towards the interior of the shell, and a gap is formed between the separation part and the inner wall of the second side of the shell, so that any two adjacent cavities are communicated; the first side and the second side are two opposite sides of the shell along the second direction; the two ends, in the third direction, of the shell are the first end and the second end correspondingly. The first direction, the second direction and the third direction are vertical in pairs; the electrode assemblies comprise positive plates and negative plates which are arranged in a laminated manner, the number of the electrode assemblies is equal to that of the cavities, and one electrode assembly is arranged in each cavity; and the protection plate is arranged on at least one of the first end and the second end and is used for being connected with the tab of each electrode assembly. The separation part physically separates the two adjacent electrode assemblies and limits the positions of the two adjacent electrode assemblies, so that an integrated multi-electrode assembly structure is formed, and the energy density of the battery is improved.

The invention relates to a microelectromechanical sensor component (1) comprising a substrate (2) with a substrate surface (3), a deflection electrode (4) movable substantially perpendicular to the substrate surface (3), and an evaluation electrode (5) for capacitively detecting a deflection of the deflection electrode (4), wherein the evaluation electrode (5) has a vertical evaluation electrode surface (5a) oriented substantially perpendicular to the substrate surface (3), which extends at least section by section parallel to a vertical deflection electrode surface (4a) of the deflection electrode (4), forming a vertical electrode gap (6) between the vertical deflection electrode surface (4a) and the vertical evaluation electrode surface (5a).The invention further relates to a microelectromechanical inertial sensor (20) comprising such a microelectromechanical sensor component (1) and a method for manufacturing such a microelectromechanical sensor component (1).

The present invention relates to a Skyrmion memory device and a cross array circuit using the same, the Skyrmion memory device according to an embodiment of the present invention includes a resistive vertical electrode forming a Skyrmion, a Skyrmion channel layer moving the formed Skyrmion, and a magnetic tunnel junction including the Skyrmion channel layer, and a Skyrmion channel layer including a spin orbit moment channel layer, the free layer, an insertion layer, and a tunnel barrier layer, and sensing the moved Skyrmion to determine either a low resistance state or a high resistance state according to magnetization directions of the free layer and the pinned layer, the Skyrmion channel layer including a spin orbit moment channel layer, the free layer, the insertion layer, and the tunnel barrier layer, the area of the free layer can be controlled by controlling the size and the number of the moved skyrmions on the basis of the thickness of the insertion layer and the type of the forming material.

The invention is suitable for the technical field of graphene heating, and provides a graphene whole-surface heating module adopting a vertical electrode structure, the graphene whole-surface heating module comprises a product heating module assembly, one side of the product heating module assembly is provided with a current inlet wire, the other side of the product heating module assembly is provided with a current outlet wire, and the current inlet wire is connected with the current outlet wire. The ends, away from the product heating module assembly, of the current inlet wire and the current outlet wire are connected with an external power source, current of the external power source is input into the upper-layer electrode through the current inlet wire, current of the upper-layer electrode flows through the graphene black film to reach the position of the lower-layer electrode and then is output through the current outlet wire, and a vertical electrode structure is formed. The vertical electrode structure is adopted, and the electrode layer is in vertical contact with the heating layer, so that the electrode does not need to be carefully avoided for the vent holes, no obvious stepped feeling exists, whole-surface heating can be realized, the heating area is large, the local low-temperature area is reduced, and the heating uniformity is improved.

A semiconductor memory device and a method for manufacturing the same are provided. The semiconductor memory device includes: electrode structures, each electrode structure including a horizontal electrode stacked on a substrate; a vertical electrode located between the electrode structures and extending along the horizontal electrode; a first contact connected to an end of the electrode structure to the horizontal electrode; a second contact connected to an upper portion of the vertical electrode; and a first interconnect structure connected to a top surface of the second contact. The first interconnect structure includes a first sub-interconnect line and a second sub-interconnect line. The first sub-interconnect line extends in a first direction and contacts the top surface of the second contact. The second sub-interconnect line extends in a second direction intersecting the first direction and contacts the first sub-interconnect line.

The application discloses a kind of three-dimensional 1S1C memory based on vertical electrode and preparation method, three-dimensional 1S1C memory includes peripheral electrode layer and vertical gating tube function layer: peripheral electrode layer is first dielectric layer and first metal electrode layer is mutually alternative stack, peripheral electrode layer is provided with several through grooves in vertical direction, each layer first metal electrode layer is separated into several independent strip electrode by groove, and strip electrode is the word line of memory;Peripheral electrode layer is provided with several through holes in vertical direction, and gating tube function layer is formed on the surface formed by second dielectric layer and second metal electrode, third metal electrode layer top extends to the surface of the first dielectric layer of top layer and forms bit line electrode and is connected together with bit line, and the area of third metal electrode layer and the first metal electrode layer opposite constitutes storage unit.The application avoids the problem of precision inaccuracy and cost is too high caused by multiple etching.

The invention provides a method and a device for preparing a circuit board with a built-in sensor. The method comprises the following steps: acquiring a circuit board substrate; the circuit board substrate is preprocessed according to a preset processing mode, and a preprocessed substrate is obtained; drilling and grooving the pretreated substrate according to preset processing parameters to obtain a first substrate; a hole is formed in the first substrate, grooves are symmetrically formed in the periphery of the wall of the hole, and the groove walls are connected with lateral electrodes; placing a target ball in the hole of the first substrate to obtain a second substrate; laminating a target cover plate with a vertical electrode and the second substrate to obtain a third substrate; when a target ball built in the third substrate is in contact with the vertical electrode or the lateral electrode, the third substrate generates and outputs a vibration sensing signal; and carrying out dispensing treatment on the third substrate to obtain a target circuit board. The vibration sensor structure can be arranged in the circuit board, the wiring space is saved, and the size of the whole machine can be reduced.

The invention provides a parallel type composite electrode device for an artificial source electromagnetic method and a resistance reducing method thereof, the parallel type composite electrode device comprises vertical electrodes and a horizontal electrode, the horizontal electrode is a horizontal metal plate, a plurality of vertical electrodes are arranged on the horizontal electrode, the top ends of the vertical electrodes are connected with a transmitting main cable through detachable connecting pieces, and the transmitting main cable is connected with the transmitting main cable. A resistance reducing agent processing area is arranged around the vertical electrode, and the horizontal electrode covers the resistance reducing agent processing area. According to the device, the composite electrode and the rock-soil body can form a whole by using the resistance reducing agent, so that the electrochemical characteristics of a contact interface are changed, and the contact resistance is reduced. For an ultra-high-power emission electromagnetic method such as a time-frequency electromagnetic method, grounding resistance can be reduced only by adopting a parallel formula for calculation and then increasing pole pit pairs, and the spacing distance between adjacent foundation pits should be larger than three times of the equivalent radius to avoid mutual influence of shielding effects.

The utility model provides an electrode detection tool set capable of rapidly replacing heads and used in multiple scenes, which comprises an insulating operating rod, a test rod head base, a test wire and a detection electrode slice, and is characterized in that the test rod head base is connected to the front end of the insulating operating rod; the detection electrode slices comprise a straight electrode slice, a right-angle electrode slice, a 45-degree electrode slice and an arc-shaped electrode slice, the straight electrode slice, the right-angle electrode slice, the 45-degree electrode slice and the arc-shaped electrode slice are installed on the test rod head base in a replaceable mode, the front end of the arc-shaped electrode slice is of an arc-shaped structure, and the test line is connected with the detection electrode slices. The test rod head base is of a U-shaped structure, two parallel rods of the U-shaped structure are provided with clamping grooves used for fixing the detection electrode slices, and the detection electrode slices are fixed in the clamping grooves through electrode fixing bolts, the detection efficiency is improved, and the problems that a traditional monitoring tool is single in function and limited in application range are solved; the detection efficiency of various insulation tools and instruments is improved; and the detection error is reduced.