Semiconductor memory and method for forming the same

Abstract

A semiconductor memory device and a method of manufacturing the same are provided. The semiconductor memory includes electrode structures that each includes horizontal electrodes stacked on each othera substrate, vertical electrodes between the electrode structures and extending along the horizontal electrodes, first contacts connected to the horizontal electrodes at end portions of the electrodestructures, second contacts connected to upper portions of the vertical electrodes, and a first interconnection structure connected to top surfaces of the second contacts. The first interconnection structure includes first and second sub-interconnection lines. The sub-interconnection lines extend in a first direction and contact the top surfaces of the second contacts. The second sub-interconnection lines extended in a second direction crossing the first direction and contact the first sub-interconnection lines.

Description

[0001] Cross References to Related Applications

[0002] This patent application claims priority from Korean Patent Application No. 10-2019-0092568 filed with the Korean Intellectual Property Office on July 30, 2019, the entire contents of which are hereby incorporated by reference. technical field

[0003] The present disclosure relates to a semiconductor device and a method of manufacturing the same, and in particular, to a three-dimensional nonvolatile memory device. Background technique

[0004] A higher degree of integration of semiconductor devices is required to meet demands for superior performance and inexpensive price. In the case of a semiconductor memory device, since the degree of integration is an important factor in determining the price of a product, it is particularly necessary to increase the degree of integration. In the case of conventional two-dimensional semiconductor memory devices, since their degree of integration is mainly determined by the area oc...

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