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Semiconductor memory and method for forming the same

A memory and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as increasing the fineness of patterns and increasing the integration of two-dimensional semiconductor memory devices

Pending Publication Date: 2021-02-02
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the extremely expensive processing equipment required to increase pattern fineness sets practical limits on increasing the integration of two-dimensional semiconductor memory devices

Method used

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  • Semiconductor memory and method for forming the same
  • Semiconductor memory and method for forming the same
  • Semiconductor memory and method for forming the same

Examples

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Embodiment Construction

[0024] Example embodiments of the inventive concepts will now be described more fully with reference to the accompanying drawings, in which example embodiments are shown.

[0025] figure 1 is a plan view illustrating a semiconductor memory device according to an embodiment of the inventive concept. figure 2 is a plan view showing the first interconnection structure and the second interconnection structure. image 3 is a plan view of the first interconnect structure. Figure 4 is a plan view of the second interconnect structure. Figure 5A , Figure 5B and Figure 5C respectively along the figure 1 Cross-sectional views taken along line A-A', line BB' and line CC' of .

[0026] refer to Figure 1 to Figure 4 , Figure 5A , Figure 5B and Figure 5C , a semiconductor memory device including a cell array region CR and a peripheral circuit region PR can be provided. As an example, the semiconductor memory device may be a flash memory device. The cell array region CR m...

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Abstract

A semiconductor memory device and a method of manufacturing the same are provided. The semiconductor memory includes electrode structures that each includes horizontal electrodes stacked on each othera substrate, vertical electrodes between the electrode structures and extending along the horizontal electrodes, first contacts connected to the horizontal electrodes at end portions of the electrodestructures, second contacts connected to upper portions of the vertical electrodes, and a first interconnection structure connected to top surfaces of the second contacts. The first interconnection structure includes first and second sub-interconnection lines. The sub-interconnection lines extend in a first direction and contact the top surfaces of the second contacts. The second sub-interconnection lines extended in a second direction crossing the first direction and contact the first sub-interconnection lines.

Description

[0001] Cross References to Related Applications [0002] This patent application claims priority from Korean Patent Application No. 10-2019-0092568 filed with the Korean Intellectual Property Office on July 30, 2019, the entire contents of which are hereby incorporated by reference. technical field [0003] The present disclosure relates to a semiconductor device and a method of manufacturing the same, and in particular, to a three-dimensional nonvolatile memory device. Background technique [0004] A higher degree of integration of semiconductor devices is required to meet demands for superior performance and inexpensive price. In the case of a semiconductor memory device, since the degree of integration is an important factor in determining the price of a product, it is particularly necessary to increase the degree of integration. In the case of conventional two-dimensional semiconductor memory devices, since their degree of integration is mainly determined by the area oc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/1157H01L27/11573H01L27/11582H01L23/528H01L21/768H10B41/10H10B41/27H10B41/35H10B41/41H10B43/10H10B43/27H10B43/35H10B43/40
CPCH01L23/5283H01L21/76838H10B43/35H10B43/40H10B43/27H01L21/76816H01L21/76831H10B43/10H10B43/50H01L29/792H01L23/535H01L21/76895H01L21/76805H10B41/10H10B41/27H10B41/35H10B41/41
Inventor 金志荣梁宇成李重锡李炳镇
Owner SAMSUNG ELECTRONICS CO LTD
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