Processing method of vertical electrode configuration structure of nanoscale phase change memory unit

Abstract

The invention discloses a processing method for a vertical electrode configuration structure of a nanoscale phase-change memory unit, in which a lower electrode material layer, an intermediate phase-change material layer and an upper electrode material layer are sequentially grown according to the procedure; during processing, the upper electrode material is The upper layer and the lower electrode material layer are processed into a partially overlapping upper and lower electrode structure, and the source and drain terminals can be exchanged. For the low-resistance crystal state, by constructing an asymmetric upper and lower electrode structure, compared with the facing vertical electrode structure, the equivalent resistance R is increased, the working current is reduced, the tunneling of large current is avoided, and the device life is prolonged. At the same time, the non-facing area component shunts the series path current, increases the current diffusion in the series process, and also reduces the operating current. The smaller the operating current, the less likely the metastable crystal phase structure will be broken down.

Description

technical field [0001] The invention belongs to the field of microelectronics, and relates to a processing method for a vertical electrode configuration structure of a nanoscale phase-change memory unit, in particular to a design, processing method and a method for a phase-change memory element based on a chalcogenide phase-change material its application. Background technique [0002] The phase change memory based on the chalcogenide phase change material can store information and data through the huge resistance difference between the crystalline phase and the amorphous phase, and can even achieve multi-level phase change storage. This phase-change process has the advantages of low power consumption and high-density cost as the size decreases, so the industry pays great attention to the development of nanoscale phase-change memory. [0003] At present, there are relatively mature applications in the structural design of phase change units, such as T-shaped structure and s...

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Problems solved by technology

[0005] Therefore, it is necessary to propose a processing method for a new electrode configuration structure suitable for nanoscale phase change units to solve the problem of tunneling and shorting in the process of nanoscale low-resistance crystallization

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