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Avalanche photodiode and avalanche photodiode array

An avalanche photoelectric and diode technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problem of no multiplication function and achieve the effect of large aperture ratio

Inactive Publication Date: 2012-11-28
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Furthermore, the photodiodes in Patent Documents 3 to 5 do not have a multiplication layer and an electric field buffer layer, so they have no multiplication function

Method used

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Experimental program
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Effect test

Embodiment approach 1

[0039] figure 1 It is a plan view showing the avalanche photodiode according to Embodiment 1 of the present invention. figure 2 is along figure 1 Sectional view of I-II. On the main surface of the n-type InP substrate 1, an n-type InP layer buffer layer 2, an avalanche multiplication layer 3 composed of doped AlInAs with a thickness of 0.15-0.4 μm, and a p-type InP electric field buffer layer with a thickness of 0.03-0.06 μm are sequentially stacked. layer 4, a light absorbing layer 5 made of doped InGaAs with a thickness of 2-3 μm, a doped InP window layer 6 with a thickness of about 2 μm, and an InGaAs contact layer 7. A p-type impurity region 8 is provided in a part of the InP-doped window layer 6 .

[0040] The impurity concentration of the n-type InP substrate is about 5×10 18 cm -3 , the impurity concentration of the p-type InP electric field buffer layer 4 is 0.5~1×10 18 cm -3 , the impurity concentration of the p-type impurity region 8 is 1×10 19 ~1×10 20 cm ...

Embodiment approach 2

[0056] Figure 7 It is a plan view showing an avalanche photodiode according to Embodiment 2 of the present invention. The linear p-side electrode 9 has a plurality of linear electrode portions 9 a , 9 b , and 9 c arranged parallel to each other, and an electrode portion 9 d orthogonal to and commonly connected to the plurality of electrode portions 9 a , 9 b , and 9 c .

[0057] The interval a is 20 μm. The interval e between adjacent electrode portions 9a, 9b, and 9c is 40 μm. The width w of the electrode portions 9a, 9b, and 9c is 5 μm, respectively. The p-type impurity region 8 is rectangular or rounded in plan view. The length b of the p-type impurity region 8 is longer than the width f.

[0058] Next, effects of Embodiment 2 will be described. In Embodiment 1, since one linear p-side electrode 9 is used, the width c of the p-type impurity region 8 is limited (since the interval a is 30 μm or less, the maximum value of the width c=2×30 μm+electrode width w) . On th...

Embodiment approach 3

[0062] Figure 8 It is a top view showing an avalanche photodiode according to Embodiment 3 of the present invention. The p-type impurity region 8 has a rectangular region 8a in plan view and two semicircular regions 8b joined to the two short sides of the rectangular region 8a, respectively. By joining the semicircular region 8b to the rectangular region 8a in this way to eliminate the corners, electric field concentration at the corners of the p-type impurity region 8 can be avoided.

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Abstract

An avalanche photodiode including a semiconductor substrate of a first conductivity type, an avalanche multiplication layer, an electric field control layer, a light absorption layer, and a window layer wherein the layers are laid one on another in this order on a major surface of the semiconductor substrate, an impurity region of a second conductivity type in a portion of the window layer, and a straight electrode on the impurity region and connected to the impurity region, the straight electrode being straight as viewed in a plan view facing the major surface of the semiconductor substrate.

Description

technical field [0001] The present invention relates to an avalanche photodiode and an avalanche photodiode array capable of realizing a large aperture ratio. Background technique [0002] As one type of semiconductor light-receiving element, there is an avalanche photodiode including a light-absorbing layer and an avalanche multiplication layer. In the avalanche photodiode of Patent Document 1, the electrodes of the avalanche photodiode are adjacent to the multiplication layer, so a high electric field is easily applied to the multiplication layer. Therefore, edge breakdown is suppressed by forming a recess in the multiplication layer. However, forming the concave portion complicates the process and causes variations in device characteristics. On the other hand, the avalanche photodiode of Patent Document 2 has a structure in which the electrode and the multiplication layer are not adjacent, and an electric field buffer layer is provided to suppress edge breakdown. [00...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/107H01L25/03H01L31/0352
CPCH01L25/03H01L31/0352H01L31/107H01L31/1075
Inventor 笹畑圭史中路雅晴
Owner MITSUBISHI ELECTRIC CORP
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