72results about How to "Conducive to high integration" patented technology

A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.

The invention relates to a wideband log-periodic dipole array antenna for feeding a substrate integrated waveguide. An upper metal coating (2) is provided with an upper assembly line (5), upper feed source element antennae (7), an upper surface (9) of the substrate integrated waveguide, a microstrip taper transition line (6) and a 50-ohm output microstrip line (8) which are sequentially connected, wherein the upper assembly line (5) is connected with the upper surface (9) of the substrate integrated waveguide, the upper feed source element antennae (7) are respectively arranged at both sides of the upper assembly line (5); a lower metal coating (3) comprises a lower surface assembly line (11) of the log-periodic dipole array antenna, lower surface feed source element antennae (12), a lower surface (13) of the substrate integrated waveguide and a ground surface (14) of a microstrip line; the lower surface assembly line (11) of the log-periodic dipole array antenna is symmetric in parallel to the upper assembly line (5) of the log-periodic dipole array antenna, the lower surface feed source element antennae (12) are symmetric in cross to the upper feed source element antennae (7); and the lower surface (13) of the substrate integrated waveguide is symmetric to the upper surface (9) of the substrate integrated waveguide and is connected with the ground surface (14) of the microstrip line.

The present invention relates to a multi-stopband ultra-wideband antenna based on split ring resonators and patch etching gaps, comprising a disk antenna and a split ring resonator coupling micro-strip structure. A lower surface metal clad layer (2) is the ground of a feeder part. An upper surface metal clad layer (3) comprises an antenna radiation unit (4), a micro-strip feeder (5), a trapezoidal impedance transformation line (6) and a split ring resonator (8), wherein, the antenna radiation unit (4) adopts the disk antenna on which split ring shape gaps (7) with the same circle center are arranged; the back of the disk antenna has no metal area; the micro-strip feeder (5) adopts a micro-strip line form; the micro-strip feeder (5) and the antenna radiation unit (4) are in impedance matching connection through the trapezoidal impedance transformation line (6); the split ring resonator (8) comprises two pairs of resonators, namely a first resonator (9) and a second resonator (10), which are symmetrically distributed on two sides of the feeder; each resonator is formed by an inner split ring and an outer split ring, and the opening direction of the inner ring is far away from the feeder, while he opening direction of the outer ring is close to the feeder.

The invention provides a multiple stop band ultra wideband antenna which is realized based on a two-segment type ladder impedance resonator, has working characteristics of ultra wideband and can restrain the interference of multi-frequency signals; the antenna comprises a medium substrate(1) and two layers of metallic coatings which are coated on the upper and the lower surfaces of the medium substrate(1) respectively, wherein the metallic coating(2) of the lower surface is of the metallic ground of a feeder part(5), and the metallic coating(3) of the upper surface comprises an antenna radiating unit(4), a feeder(5) and a multi-band stop filter(7), wherein the antenna radiating unit(4) which is disc-shaped; no metallic ground (2) is distributed behind the disc; the radiating unit adopting the structure has ultra wideband characteristics; the feeder part(5) adopts a microstrip line form, and the multi-band stop filter(7) and a ladder-formed impedance conversion line(6) are connected between the feeder part(5) and the antenna radiating unit(4), wherein the ladder-formed impedance conversion line(6) carries out the impedance matching connection.

The invention relates to a chip packaging structure of a plurality of assemblies. The chip packaging structure comprises a first assembly located at the bottom layer, at least one second assembly located above the first assembly and at least one third assembly stacked above the second assemblies. The second assemblies are arranged at intervals and do not contact with each other, the third assemblies are located on the outer sides of the second assemblies, the third assemblies and the third assemblies and the second assemblies are separated from each other and do not contact, each second assembly is electrically connected with the first assembly through a first group of protruding structures, and the third assemblies are electrically connected to the first assembly through a second group of protruding structures outside the second assemblies.

An optical modulator includes a plurality of electrode pads arranged in a zigzag alignment; two arms which are partially bent to circumvent the electrode pads so as to carry out optical phase modulation at various parts based on voltages input via the electrode pads; an optical branch structure branching the arms; and an optical coupling structure aggregating the arms together. Each arm is made of a silicon-base electro-optic element including a substrate; a first conductive semiconductor layer having a rib waveguide structure; a dielectric layer deposited on the rib waveguide structure; and a second conductive semiconductor layer deposited on the dielectric layer. The first conductive semiconductor layer is connected to first electrode wires via first contacts, while the second conductive semiconductor layer is connected to second electrode wires via second contacts. Thus, it is possible to miniaturize the optical modulator which can operate at a low voltage.

An electromechanical drive for track-laying vehicles in which the two drive sides have no mechanical coupling and permits smaller overall lengths and overall diameters. As a result, the flexibility of the arrangement of the drive components compared is further increased. The drive includes an electric traction motor, at least one variable-speed mechanical gear unit, and at least one brake. At least one of these components is arranged inside the rotor of the electric motor, and the remaining components are arranged laterally at the electric motor in such a way as to lie coaxially in approximately one plane.

A magnetoresistance effect element includes a recording layer containing a ferromagnetic body, and including a first fixed and second magnetization regions having magnetization components fixed substantially in a direction antiparallel to the in-plane direction to each other, and a free magnetization region disposed between the first and second fixed magnetization regions and having a magnetization component invertible in the in-plane direction, a domain wall disposed between the first fixed magnetization region and the free magnetization region, and being movable within the free magnetization region, and a magnetic nanowire having a width of 40 nm or less. The thickness of the recording layer is 40 nm or less and at least half but no more than twofold the width of the magnetic nanowire. The element further includes a barrier layer disposed on the recording layer, and a reference layer disposed on the barrier layer and containing a ferromagnetic body.

The invention discloses a pulsed plasma thruster working medium feeding component. The pulsed plasma thruster working medium feeding component is characterized by simple structure, light weight, and high mechanical properties, and can be integrated and assembled with different pulsed plasma thrusters. High general applicability is provided that a plurality of waist-shaped holes are formed in two sides of a working medium bearing box, and reinforcing bars are formed, a reinforcing bar connecting cover is arranged at the top of the box mouth, a hollow truss structure is formed, weight is reduced, damping is lowered, and the mechanical reliability of the component is improved; and a restraint groove is formed in the center of the bearing box, and an ear piece 15 is arranged on the side face of the corresponding working medium and can be arranged in a restraint groove, so that the restraints of the working medium and spring in the directions of up and down, and left and right are realized,and the stable and reliable directional pushing of the spring and the stable and reliable forward directional movement of the working medium can be effectively guaranteed.

A mesh source wiring composed of first source wirings, second source wirings, and contacts for mesh source wiring is connected, through contacts for strap source wiring, with strap source wirings formed on a wiring layer nearer a substrate than wiring layers where the mesh source wiring is formed. The cell source wirings formed on a wiring layer nearer the substrate than the wiring layer where the strap source wirings are formed are connected with the strap-source wirings through contacts for cell source wiring.

The invention discloses an SIW planar filter. The SIW planar filter include a top metal foil, a dielectric plate and a bottom metal foil, the left side of the top metal foil is provided with a left port microstrip lead-out line, A right port microstrip lead-out line is arranged on the right side and the left port microstrip lead-out line and the right port microstrip lead-out line are offset withrespect to the horizontal centerline, a plurality of first metal vias are arranged around the top metal foil, A left metal via hole is arranged on that left side of the center of the top metal foil and a right metal via hole is arranged on the right side, the vertical center line of the top metal foil is provided with a plurality of medium metal vias, The surface of the top metal foil is providedwith a left gap groove, a right gap groove, an upper left metal via hole and an upper right metal via hole, a first metal via hole, a left metal via hole, a right metal via hole, a medium metal via hole, an upper left metal via hole and an upper right metal via hole penetrating the dielectric plate and the bottom metal foil. The invention has the advantages of small volume, light weight, small signal transmission loss, low insertion loss and high echo loss, and improves the transmission performance.

There is disclosed a one-dimensional piezoelectric actuator array 1 houses a piezoelectric device 35 including a plate or pillar-shaped piezoelectric member 4 and electrodes 18, 19, and having a planar form; the device 35 being driven by a piezoelectric effect of the piezoelectric member 4. The piezoelectric device 35 is formed as a whole in a planar comb shape wherein comb teeth 26 are connected to one another in one end, and portions of the comb teeth 26 work as a plurality of driving portions 31. The guide substrate 2 and piezoelectric device substrate 3 are integrally unified in such a manner that the resultant is readily usable for the formation of a multiply stuck structural body. In case of need, the array may be further provided with a guide substrate 2 having a concave portion 9 for housing at least a part of the piezoelectric device substrate 3.

The invention provides a preparation method of area thick film silicon nitride, and the method comprises the following steps of sequentially forming a lower cladding layer and a sacrificial layer on asemiconductor substrate, wherein the height of the sacrificial layer is the same as the thickness of a preset waveguide device area; forming a plurality of core region grooves by taking the upper surface of the lower cladding layer as a stop layer; depositing a core layer material in the plurality of core region grooves and on the sacrificial layer to form a first core layer, wherein the thickness of the first core layer is smaller than that of the preset waveguide device area; removing the redundant first core layer by taking the upper surface of the sacrificial layer as the stop layer; repeating the above-mentioned steps until the thickness of the formed core layer reaches the thickness of the preset waveguide device area; removing the sacrificial layer to form a plurality of core regions by taking the upper surface of the lower cladding layer as the stop layer, and etching the core regions to form a preset waveguide device structure; and forming an upper cladding layer on the preset waveguide structure and the lower cladding layer. The preparation method of area thick film silicon nitride solves the problem of high stress caused by too thick film, is beneficial to realize highintegration of a chip, and simultaneously solves the problem that direct grooving is not beneficial to prepare a high-integration waveguide device.

The invention discloses a cantilever beam type MEMS magnetic sensor and a preparation method thereof. The cantilever beam type MEMS magnetic sensor comprises a cantilever beam, a surface acoustic wavedevice, a magnetostrictive film and a magnetic mass block. The surface acoustic wave device is arranged above the cantilever beam, and the magnetic mass block is arranged at a free end of the cantilever beam; and the magnetostrictive film is arranged above the surface acoustic wave device. The surface acoustic wave device comprises a piezoelectric film and an interdigital electrode; the piezoelectric film is arranged on the upper surface of the cantilever beam, and the plurality of interdigital electrodes are arranged on the piezoelectric film. The invention provides a cantilever beam type MEMS magnetic sensor. Different from a traditional acoustic surface wave magnetic sensor, the cantilever beam type MEMS magnetic sensor is provided with the cantilever beam with the magnetic mass block,so that the sensitivity is improved through the magnetic torque effect; and with the MEMS process, and the prepared sensor is small in size and beneficial to high integration.

The invention discloses a reflective multi-light-path multi-wavelength coupling method for remote sensing detection of motor vehicle exhaust, which comprises the following steps of: combining collimated light beams by laser light sources with different wavelengths in each channel through a multi-surface reflecting cone, and simultaneously, realizing beam expansion and collimation optimization of coupled light beams by using a confocal concave reflecting mirror and a convex reflecting mirror; and finally, reflecting and outputting the light by the reflector. According to the invention, multi-beam multi-wavelength small-diameter high-precision light beam coupling is realized by adopting the multi-surface reflection cone of which the surface is plated with the metal film, high integration of a system light path structure is facilitated, and limitation of a lens film layer process and wave bands of a conventional infrared transmission type coupling scheme can be avoided by adopting the reflection type structure; and the material absorption loss of the transmission-type coupling structure can be avoided, the coupling efficiency is higher, the service life of the film layer is longer, and the spectrum application range is wider.

A novel memory device is provided. A first cell array including a plurality of memory cells and a second cell array including a plurality of memory cells are stacked. One of two bit lines of a first bit line pair is electrically connected to A memory cells of the first cell array, and the other of the two bit lines of the first bit line pair is electrically connected to D memory cells of the second cell array. One of two bit lines of a second bit line pair is electrically connected to B memory cells of the first cell array and F memory cells of the second cell array, and the other of the two bit lines of the second bit line pair is electrically connected to C memory cells of the first cell array and E memory cells of the second cell array. The first bit line pairs and the second bit line pairs are alternately provided.

The invention discloses a device for cutting off a soft pipeline. The device comprises an air cylinder, a traction base, a blade, guide rods, springs, a driving chuck, a static chuck and a bearing frame. The air cylinder is fixed to the bearing frame, the traction base is connected with a push plate of the air cylinder, the driving chuck is connected with the traction base through the guide rods and the springs, the blade is fixed to the traction base, the static chuck is fixed to the bearing frame, and the static chuck and the driving chuck are clamping mechanisms capable of being opened and closed for each other. According to the device for cutting off the soft pipeline, notches are perpendicular and free of burrs and yielding tensile deformation, the relative length error is smaller than 0.5%, and the work efficiency is improved by more than 20% by an average; and the structure is simple and compact, high equipment integration is facilitated, the workshop land use cost is reduced, and a technical module can be laid for designing of a standard and full-automatic production line.

A method for fabricating a ferroelectric memory having memory cells arranged in arrays, wherein an Al2O3 film (2), a Pt film (3), a PZT film (4) and IrO2 film (5) are formed on an interlayer insulation film. At the time of forming a top electrode, the IrO2 film (5) is patterned using a resist mask having a part extending in the row direction, and then patterned using a resist mask having a part extending in the column direction. Consequently, a top electrode of the IrO2 film (5) having a rectangular plan view is formed at the intersection of these resist masks.

The invention discloses a manufacturing method of a PCB, and a PCB manufactured by use of the method. The PCB comprises a PCB substrate and a protective cover plate. The protective cover plate is adhered to the PCB substrate through an adhesive coating, the adhesive coating is prepared by a low-flow glue material or a flow-free glue material, the PCB substrate is provided with a pad and a positioning hole, an installation hole is arranged at a position, corresponding to the pad, of the protective cover plate, a relief hole is arranged at a position, corresponding to the pad, of the adhesive coating, an LED chip is packaged inside the installation hole, the LED chip is electrically connected with the PCB substrate through the pad, alignment holes are arranged at positions, corresponding to the positioning hole, of the protective cover plate and the adhesive coating, and the positioning hole and the alignment holes are selectively aligned through an auxiliary positioning shaft. According to the invention, through a cooperative structure of the PCB substrate, the adhesive coating and the protective cover plate, gummosis on the surface of the pad position of the PCB substrate is avoided, and the integration density of the LED chip is improved. Besides, through a cooperative structure of the positioning hole, the alignment holes and the auxiliary positioning shaft, the alignment precision of the protective cover plate and the PCB substrate is effectively improved.

This invention relates to the application of the magnetic valve in the hydrogen making device, on the hydrogen separator and oxygen separator of the electrolyzation hydrogen making device, there have the liquid level transmitter LT, pressure transmitter PT, temperature transmitter TT, liquid signal transformer LY, pressure signal transformer PY, temperature signal transformer TY, liquid level PLC, pressure PLC, temperature PLC, liquid level gas-filled film adjusting valve LV, pressure gas-filled film adjusting valve PV and temperature gas-filled film adjusting valve TV on them, the character is that the level gas-filled film adjusting valve LV, the pressure gas-filled film adjusting valve PV, the temperature gas-filled film adjusting valve TV are replaced by the level electric film adjusting valve, the pressure electric film adjusting valve, the temperature electric film adjusting valve respectively, and the volume of the electric film adjusting valve is small, which is convenient for the high integration of the complexes.

The invention relates to a microstrip dual-mode and dual-pass band-pass filter belonging to the technical field of microwave communication. The filter comprises two microwave medium substrate layers, a metal layer and a bonding medium for connecting the two microwave medium substrate layers, wherein, a first resonator, a pair of input and output feeders and a pair of coupling arms are arranged onthe first microwave medium substrate layer, a second resonator is arranged on a second microwave medium substrate layer, and the second resonator is opposite to the first resonator. The microstrip dual-mode and dual-pass band-pass filter has the advantages of simple structure and easy realization and convenient planar integration, and simultaneously can greatly improve the performance of the filter and realize dual-mode coupling; and compared with the traditional structure, the filter has two adjustable variables of length and width and increases the range in which two orthogonal modes generate coupling and cause resonant frequency splitting so that the band-pass bandwidth can be changed easily in design.

The invention discloses a special ceramic membrane treating agent for an environment-friendly non-phosphorus electrophoresis. The treating agent comprises zirconium fluoride and / or fluotitanic acid, water-base resin, silane and disperse nano particles. Each kilogram of treating agent comprises, by mass, 30-50 g of zirconium fluoride acid or fluotitanic acid, 80-120 g of water-base resin, 30-50 g of amino silane or epoxy silane, 1-10 g of disperse nano particles, and the balance water. The invention further provides a preparation method of the special ceramic membrane treating agent for the environment-friendly non-phosphorus electrophoresis, and further provides a method for forming a membrane through treatment of the special ceramic membrane treating agent for the environment-friendly non-phosphorus electrophoresis. The membrane formed by the treating agent and the electrophoresis form a metal layer, the metal layer is high in combination degree, and the physical combination capacityof a ceramic body and an electrophoresis coating can be effectively improved.

The invention relates to a marine main unit integrated rack, particularly a marine main unit modular integrated rack with a steam emission function. To overcome a problem that exist marine main unit frame structures can not meet the requirements of compactness, integration, modularization and vibration damping installation, the marine main unit modular integrated rack having a steam emission function is provided and includes a high pressure steam turbine frame, a low-pressure steam turbine frame and a reducer frame. The high-pressure steam turbine frame is connected with the low-pressure steamturbine frame. The reducer frame is respectively connected with the high-pressure steam turbine frame and the low-pressure steam turbine frame, each frame is connected by a connector, the central part of the low-pressure steam turbine frame is provided with a through hole, the upper part of the through hole is connected with the steam turbine exhaust end, and the lower part is used for connectingwith the condenser. Each frame comprises two upper and lower panels; a reinforcing rib is arranged between the panels; and a vibration isolator is also arranged at the bottom of the frame. The modular integrated rack is used for supporting and placing the marine main unit.

Disclosed herein are chip packaging structures for packaging multiple assemblies therein. In one embodiment, a chip packaging structure can include: (i) a first assembly located at a bottom layer of the chip packaging structure; (ii) at least one second assembly located above the first assembly, where the second assembly is electrically connected to the first assembly by a plurality of first protruding structures located under the second assembly; (iii) at least one third assembly located above the second assembly, where the third assembly is electrically connected to the first assembly by a plurality of second protruding structures located outside of the second assembly; and (iv) where a first portion of the third assembly and the plurality of second protruding structures form a bent structure substantially perpendicular to a second portion of the third assembly.

There is provided a process for producing an integrated circuit, wherein not only can conductive fine particles be deposited efficiently and densely in minute wiring channels and connecting holes but also a circuit of low wiring resistance and high density can be formed and wherein a high-degree integration can be achieved to thereby bring about an economic advantage. In particular, there is provided a process for producing an integrated circuit, comprising coating a substrate provided with wiring channels with a coating liquid for integrated circuit formation containing conductive fine particles to thereby form an integrated circuit on the substrate, wherein the coating liquid for integrated circuit formation while being exposed to ultrasonic waves is applied to the wiring channels.