54results about How to "Convenient and highly integrated" patented technology

A semiconductor memory device compensates leakage current. A plurality of memory cells is disposed at intersections of word lines and bit lines. A plurality of dummy cells is connected to at least one dummy bit line. A leakage compensation circuit is connected to the at least one dummy bit line that outputs a leakage compensation current to at least one of the bit lines. A read current supply circuit outputs a read current necessary for a read operation to at least one of the bit lines in response to a first control signal. The memory device is a phase-change memory device containing phase-change material. The semiconductor memory device compensates leakage current in a read operation and supplies the leakage compensation current to a selected bit line, thereby suppressing error operation occurrence caused by leakage current.

A semiconductor memory device compensates leakage current. A plurality of memory cells is disposed at intersections of word lines and bit lines. A plurality of dummy cells is connected to at least one dummy bit line. A leakage compensation circuit is connected to the at least one dummy bit line that outputs a leakage compensation current to at least one of the bit lines. A read current supply circuit outputs a read current necessary for a read operation to at least one of the bit lines in response to a first control signal. The memory device is a phase-change memory device containing phase-change material. The semiconductor memory device compensates leakage current in a read operation and supplies the leakage compensation current to a selected bit line, thereby suppressing error operation occurrence caused by leakage current.

A method of fabricating a semiconductor memory device having a self-aligned electrode is provided. An interlayer insulating layer having a contact hole is formed on a substrate. A phase change pattern partially filling the contact hole is formed. A bit line which includes a bit extension self-aligned to the phase change pattern and crosses over the interlayer insulating layer is formed. The bit extension may extend in the contact hole on the phase change pattern. The bit extension contacts the phase change pattern.

A stacked memory device may include a substrate, a plurality of memory groups sequentially stacked on the substrate, each memory group including at least one memory layer, a plurality of X-decoder layers, at least one of the plurality of X-decoder layers being disposed between every alternate neighboring two of the plurality of memory groups, and a plurality of Y-decoder layers disposed alternately with the plurality of X-decoder layers, at least one of the plurality of Y-decoder layers being disposed between every alternate neighboring two of the plurality of memory groups.

The magnetic memory device comprises a recording layer 70 formed linearly over a substrate 10 and having a plurality of pinning sites 52 for restricting the motion of domain walls 50 formed at a prescribed pitch and having the regions between the plural pinning sites 52 as recording bits 72. The recording layer 70 includes a first recording layer portion 46 and a second recording layer portion 68, and the second recording layer portion 68 is positioned above the first recording layer portion 46 and has one end connected to one end of the first recording layer portion 46. The second recording layer portion 68 is formed above the first recording layer portion 46, and the end of the second recording layer portion 68 is connected to one end of the first recording layer portion 46, whereby the space required to form the recording layer 70 can be small.

A molecular detection chip including a metal oxide silicon-field effect transistor (MOSFET) on sidewalls of a micro-fluid channel and a molecular detection device including the molecular detection chip are provided. A molecular detection method, particularly, qualification methods for the immobilization of molecular probes and the binding of a target sample to the molecular probes, using the molecular detection device, and a nucleic acid mutation assay device and method are also provided. The formation of the MOSFET on the sidewalls of the micro-fluid channel makes easier to highly integrate a molecular detection chip. In addition, immobilization of probes directly on the surface of a gate electrode ensures the molecular detection chip to check for the immobilization of probes and coupling of a target molecule to the probes in situ.

The invention discloses a network element and a method for uploading MR (Measure Report) messages by the network element. The method comprises the following steps of: receiving the MR messages and CDL (Call Detail Logs) messages which are reported by a terminal and a base station; independently forming an MR file from the received MR messages; when determining that an MR interface link between the network element and an MR server is normal, reporting the MR file to the MR server by adopting a mode of an FTP (File Transfer Protocol), so that the MR server generates a performance index file according to the MR messages in the MR file. According to the network element and the device disclosed by the invention, the processing capability of the network element which receives the reported MR messages is improved; the packet loss problem of the MR messages is ensured not to exist; the correctness of the performance index files obtained by a network optimization platform and a northbound webmaster is powerfully guaranteed; and the processing efficiency of the northbound webmaster on the performance index files is effectively promoted.

A molecular detection chip including a metal oxide silicon-field effect transistor (MOSFET) on sidewalls of a micro-fluid channel and a molecular detection device including the molecular detection chip are provided. A molecular detection method, particularly, qualification methods for the immobilization of molecular probes and the binding of a target sample to the molecular probes, using the molecular detection device, and a nucleic acid mutation assay device and method are also provided. The formation of the MOSFET on the sidewalls of the micro-fluid channel makes easier to highly integrate a molecular detection chip. In addition, immobilization of probes directly on the surface of a gate electrode ensures the molecular detection chip to check for the immobilization of probes and coupling of a target molecule to the probes in situ.

A stacked memory device may include a substrate, a plurality of memory layers stacked on and above the substrate and divided into a plurality of groups, a plurality of inter-decoders electrically connected to and disposed between the plurality of memory layers in a corresponding one of the plurality of groups, and at least one pre-decoder electrically connected to the plurality of inter-decoders and disposed between the plurality of inter-decoders. A stacked memory device may include a substrate, a plurality of memory layers stacked on and above the substrate and divided into a plurality of groups, a plurality of inter-drivers electrically connected to and disposed between the plurality of memory layers in a corresponding one of the plurality of groups, and at least one pre-driver electrically connected to the plurality of inter-drivers, and disposed between the plurality of inter-drivers.

The invention provides a low-cost biochemical sensor based on a narrow-linewidth microcavity and a broadband light source. The low-cost biochemical sensor based on the narrow-linewidth microcavity and the broadband light source comprises the broadband light source and a double straight waveguide coupled micro-ring cavity, wherein the double straight waveguide coupled micro-ring cavity comprises a first straight waveguide, a second straight waveguide and a micro-ring resonant cavity; the micro-ring resonant cavity and the waveguides are prepared on SOI sequentially via exposure and etching; the micro-ring resonant cavity is in coupling connection with the first straight waveguide and the second straight waveguide separately; the broadband light source is input into the double straight waveguide coupled micro-ring cavity; sensing can be realized by monitoring the intensity change of an output signal of the double straight waveguide coupled micro-ring cavity. The low-cost biochemical sensor based on the narrow-linewidth microcavity and the broadband light source can effectively increase the measuring flux, greatly reduces the manufacturing cost and meet the portable requirement; the output light power is directly detected by using the broadband light source, so the sensitivity of the sensor is effectively improved.

An end effector of a novel harvesting robot and a flexibility control method thereof relate to the field of harvesting robots. The end effector only utilizes a servo motor to respectively drag a finger grabbing mechanism and a stem separating mechanism according to operation sequences so as to finish tasks of fruit grabbing and stem separation. Two pressure sensors on the inner sides of fingers are arranged in a vertically parallel mode, the pressure sensor above the finger surface monitors grabbing force of the fingers to a fruit in real time, and the pressure sensor below the finger surface detects a sliding state of the fruit on the finger surface in real time. A spongy cushion with a certain thickness is adhered to the inner sides of the fingers so as to avoid high-speed collision between the fingers and the fruit during rapid grabbing. The stem separating mechanism adopts a unique V-shaped scissors blade structure, a stem is cut off by high-speed collision between a knife edge and the stem, and whether the stem is cut off is judged according to the changing law of the rotating speed of the servo motor reflected by an encoder during stem separation. The end effector is simple in structure, reasonable in design, novel, unique and capable of achieving flexible harvesting of the fruits.

The invention relates to a joint variable-rigidity mechanism, in particular to a variable-rigidity mechanism based on geometrical features. The variable-rigidity mechanism aims to solve the problems that an existing variable-rigidity mechanism is complex in structure and poor in linearity, gaps and friction exist between the mechanism and a rod when the mechanism moves through a fulcrum, and consequently the position precision is low. The variable-rigidity mechanism comprises an output rod, a rigidity adjusting inner gear ring, a fulcrum gear, a fulcrum frame, a fulcrum bar, a middle rod, a spring, a shaft sleeve and two sliding blocks, wherein the sliding blocks are arranged at the two ends of the middle rod correspondingly, the spring is arranged on the middle rod located between the two sliding blocks in a sleeving mode, the shaft sleeve is arranged between the sliding blocks and the middle rod in a sleeving mode, and the shaft sleeve is axially positioned through bearing end covers arranged on the sliding blocks; and the fulcrum gear is engaged with the rigidity adjusting inner gear ring, and the fulcrum gear is arranged below the fulcrum frame and detachably connected with the fulcrum frame. The variable-rigidity mechanism is applied to a robot elbow joint.

A stacked memory device may include a substrate, a plurality of memory layers stacked on and above the substrate and divided into a plurality of groups, a plurality of inter-decoders electrically connected to and disposed between the plurality of memory layers in a corresponding one of the plurality of groups, and at least one pre-decoder electrically connected to the plurality of inter-decoders and disposed between the plurality of inter-decoders. A stacked memory device may include a substrate, a plurality of memory layers stacked on and above the substrate and divided into a plurality of groups, a plurality of inter-drivers electrically connected to and disposed between the plurality of memory layers in a corresponding one of the plurality of groups, and at least one pre-driver electrically connected to the plurality of inter-drivers, and disposed between the plurality of inter-drivers.

The invention provides a power supply battery and a power supply system for high-speed maglev trains. The power supply battery comprises an electrolyte tank, a plurality of liquid flow pumps and a plurality of aluminum-air battery reactors. The aluminum-air battery reactors are sequentially connected in series. The electrolyte tank comprises a plurality of strip-shaped electrolyte grooves. One liquid flow pump corresponds to one aluminum-air battery reactor and one electrolyte groove. The power supply battery and the power supply system for high-speed maglev trains provided by the embodiment of the invention have the advantages of long-term storage without power loss, high energy density, high safety, abundant resources, low manufacturing cost and cleanliness and easy recovery by adoptingaluminum-air batteries as the power supply of an on-board energy storage system of a high-speed maglev train. Moreover, high voltage of the whole power supply battery can be ensured, self-discharge isreduced, high integration of the aluminum-air battery is facilitated, the installation space is reduced, continuous work is realized, and energy can be continuously provided for maglev train loads.

The invention discloses a broadband SPPs one-way exciter based on an asymmetric nanoscale groove structure and a control method. The broadband surface plasmon polaritons (SPPs) one-way exciter comprises a metal film, a main nanoscale groove is formed in the surface of the metal film, and an auxiliary nanoscale groove is formed in one side of the bottom of the main nanoscale groove to form the asymmetric nanoscale groove structure; the relative amplitude and phase difference of excited SPPs are regulated and controlled by controlling the depth of the main nanoscale groove and the depth of the auxiliary nanoscale groove, so that one-way excitation of the SPPs is achieved; furthermore, the interference effect among different modes inside the nanoscale grooves does not sensitively depend on wavelengths, and therefore bandwidth SPPs one-way exciter with the bandwidth reaching 220 nm is obtained. The SPPs one-way exciter has the high SPPs excitation efficiency, the high extinction ratio and other high performances, and has the super-small size of a few hundreds of nanometers, high integration is facilitated, and therefore the broadband SPPs one-way exciter is widely applied in an SPPs photonic circuit of the ultra-high integration level.

The invention discloses a period detection system adapting to FPGA local reconstruction, and aims to provide a framework which facilitates function transplantation and efficiently utilizes hardware resources. According to the technical scheme, a platform control management module receives control information sent by a system bus through communication middleware, monitors the operation of whole platform software in real time according to the requirements of the system, and controls the reconstruction of a reconstruction area. The generated global and local bit stream files and other configuration data are placed on a Flash memory, control information issued by the system is analyzed, and a scheduling processing process is set based on a periodic reconstruction algorithm of a function priority. During reconstruction, corresponding local reconfiguration data in a detection period is sequentially read, the function Bit operation body is serially loaded to the ICAP configuration interface of the FPGA. After loading is completed, the current reconstruction function is operated, reconstruction loading of the function in the reconstruction area is achieved, and the requirement for periodictime division multiplexing of the function on a periodic detection system hardware platform is met.

The nonvolatile memory device includes at least one pair of first electrode lines, at least one device structure disposed between the at least one pair of first electrode lines and a dielectric layer disposed between the at least one device structure and the at least one pair of first electrode lines. The at least one device structure includes a second electrode line including a first conductive type semiconductor, a resistance changing material layer adjacent to the second electrode line, a channel adjacent to the resistance changing material layer and including a second conductive type semiconductor different from the first conductive type semiconductor and a third electrode line adjacent to the channel and including the first conductive type semiconductor.

The invention discloses a three-dimensional micro / nano electromechanical switch and a preparation method thereof. The three-dimensional micro / nano electromechanical switch comprises an insulating base, wherein the insulating base is provided with two base electrodes; each base electrode is vertically connected with a micro / nano wire; and the top end of each micro / nano wire is taken as a switch contact. The preparation method comprises the following steps: (1) preparing two isolated base electrodes on the base with an insulating layer; and (2) preparing the micro / nano wires on various base electrodes by an electrochemical deposition method to obtain the three-dimensional micro / nano electromechanical switch. The three-dimensional micro / nano electromechanical switch disclosed by the invention is relatively low in closing voltage and small in device size; highly integration is convenient to achieve; the preparation method is simple, easy to achieve and short in preparation cycle; and high-freedom three-dimensional micro / nano wires can be fabricated.

The invention discloses a zero level eliminated metasurface sinusoidal grating and a design method thereof. Firstly, a nano-brick unit structure capable of realizing a half-wave plate function is optimized, then a polarization state adjusting function of the nano-brick unit structure is utilized, incident linearly polarized light is subjected to polarization state modulation by changing a direction angle of a nano-brick, and continuous amplitude modulation can be realized by combining a polarization analyzer. The metasurface sinusoidal grating designed by the method not only can realize continuous amplitude modulation on the incident ray polarized light, but also can realize negative amplitude adjustment, and truly realizes amplitude modulation according to a cosine or sine function changerule. Because the complex amplitude transmission coefficient of the metasurface sinusoidal grating does not contain a constant term, only + / -1 level diffraction light exists during diffraction, no zero level exists, and the zero level eliminated sinusoidal grating is achieved.

The invention discloses a dual-color surface plasmon beam splitter of an asymmetrical nanometer groove structure and a beam splitting method. The dual-color surface plasmon beam splitter comprises a metal thin film. A main nanometer groove is formed in the surface of the metal thin film, an additional nanometer groove is formed in one side of the bottom of the main nanometer groove, and then the asymmetrical nanometer groove structure is formed. Through the depths of the main nanometer groove and the additional nanometer groove in a control structure, the relative amplitude and phase differences of excited SPPs are regulated and controlled, the one-way excitation of the SPPs in one direction is achieved under the first working wavelength, the contribution to the SPPs excited in a third-order wave guide mode is further made, and the one-way excitation of the SPPs in the opposite direction is achieved under the shorter second working wavelength. The beam splitter has the high SPPs excitation efficiency, the high extinction ratio and other high performance at the same time; due to the super-small size of hundreds of nanometers, highly integration is facilitated, and therefore the beam splitter is widely applied to an ultrahigh integrity SPPs photonic circuit.

The invention relates to a tunable all-solid-state white light laser system and belongs to the technical field of white laser display. The system comprises a blue light LD, a self-frequency doubling yellow laser and a laser beam combining assembly, wherein the light emitted by the blue light LD and the light emitted by the self-frequency doubling yellow laser are combined through the laser beam combining assembly to form white light laser, and the working wavelength of the blue light LD is 430-450 nm, and the working wavelength of the self-frequency doubling yellow laser is 560-590nm. According to the spatial color mixing principle, the white light laser is obtained through matching according to a proper proportion, and the blue light components and yellow light components in the system are independently adjustable; the adjustment of cold white light, natural white light and warm white light of the system can be achieved by controlling the power ratio of the blue light components and the yellow light components; a super-continuum spectrum generation device and complex devices such as white light extraction are not needed, and the system is adjustable in real-time chromaticity, is easy to integrate, and is particularly suitable for the field of high-power special illumination display.

The invention discloses a method for preparing an MAS (MgO-Al2O3-SiO2) series microcrystal glass electronic substrate in a water-based tape-casting mode, and relates to a method for preparing the MAS series microcrystal glass electronic substrate, and the method can be used for solving the problems that the use of organic solvents can do harm to human bodies and the environment, the production process has potential safety hazard, the production cost is relatively high and reception of signals is slow in the data transmission process in a conventional method for preparing the MAS series microcrystal glass electronic substrate. The method comprises the following steps: I, preparing MAS series glass powder, II, preparing MAS water-based slurry, III, preparing a crude glass strip, IV, preparing a crude substrate material blank, and V, sintering. By adopting the method, harm to the human bodies and the environment is alleviated, the potential safety hazard in the production process is reduced, the cost is low, and the problem that the reception of the signals is slow in the data transmission process is solved. The method is applied to preparation of the MAS series microcrystal glass electronic substrate.

The invention discloses a variable-rigidity robot joint structure which comprises a joint mechanism and a variable-rigidity adjusting mechanism. The joint mechanism comprises a first joint and a second joint, and the first joint and the second joint are connected through a first driving assembly; the variable-rigidity adjusting mechanism comprises a shell and a gear and rack assembly, the gear and rack assembly comprises a gear and a rack which are meshed with each other, the variable-rigidity adjusting mechanism further comprises a second driving assembly capable of driving the gear to rotate, the rack is slidably connected to the shell, and an elastic piece is further arranged on a moving path of the rack; and the two ends of the elastic piece abut against the rack and the shell correspondingly, so that the rack can compress the elastic piece when sliding along the shell. By means of the variable-rigidity robot joint structure, rigidity adjustment can be achieved, so that the using safety of a robot is improved, further damage to people and the surrounding environment is avoided, and man-machine safety is achieved.

A half-module substrate integrated waveguide leaky-wave antenna adopts a double-sided single-layer PCB process, utilizes upper and lower metal surfaces and a lateral metalized through hole array to realize trapping electromagnetic waves and realize effective leaky-wave radiation on an opening surface. The half-module substrate integrated waveguide leaky-wave antenna adopts half-module substrate integrated waveguide of a leaky-wave part (9) with reduced width to realize the effective leaky-wave radiation; in the antenna, the bottom layer of a dielectric substrate (1) completely covers the lower metal surface (4), and the top layer of the dielectric substrate (1) covers the upper metal surface (2); a metalized through hole (3) positioned at one side of half-module substrate integrated waveguide (7) positioned in normal width, half-module substrate integrated waveguide with gradient width (8) and the half-module substrate integrated waveguide of the leaky-wave part (9) connects the upper and lower metal layers; and for convenient detection, the input and output ends of the antenna are 50 ohm micro-strips (5).

The invention discloses an electromigration reliability test structure and a use method thereof. According to the electromigration reliability test structure and the use method thereof, a lead-out end of a third detection structure is connected with a detection end of a first detection structure, and therefore, when whether hillocks exist is detected, whether potential difference changes can be judged so that whether the hillocks exist can be detected, and tiny leakage current does not needed to be judged, and thus, detection efficiency can be greatly improved, and a situation in which leakage current is too tiny to detect can be eliminated; and a welding pad can be reduced, so that test area can be saved, and therefore, improvement of integration degree can be benefitted.

The invention discloses a 120-degree optical mixer based on a hybrid plasmon optical waveguide, which is composed on a singe 3*3 multi-mode interference coupler, wherein the 3*3 multi-mode interference coupler is provided with a multi-mode waveguide region and three input waveguides and three output waveguides of the multi-mode waveguide region, and the waveguide cross section structure perpendicular to the light propagation direction of the 3*3 multi-mode interference coupler is a hybrid plasmon waveguide structure; the hybrid plasmon waveguide structure includes a metal layer, a slit dielectric interlayer, a dielectric waveguide layer and a substrate layer which are sequentially designed in a laminated manner from top to bottom, the clearance between the metal layer, the slit dielectricinterlayer and the dielectric waveguide layer and the substrate layer forms an air cladding; both input light of the input waveguides and output light of the output waveguides are of a hybrid plasmonfundamental mode, the hybrid plasmon waveguide structure is used for exciting the input light of the hybrid plasmon fundamental mode to form multiple hybrid plasmon optical waveguide modes in the multi-mode waveguide region. The size of the mixer is reduced from the millimeter level to the micron level.

The invention is applicable to the server field and provides a server architecture and a running method. The server architecture comprises a central processing unit (CPU), a north bridge chip, a southbridge chip and a baseboard management controller (BMC), wherein the CPU or the south bridge chip is connected with a serial peripheral bus controller (SPI controller) of the BMC through an LPC interface with a small pin number; and a storage medium of the BMC is divided into two regions, a BMC code is stored in the first region, and a BIOS code is stored in the second region. The server architecture has the advantages that on the one hand, a BIOS storage chip is omitted, hardware cost is lowered, and high integration of the server architecture is benefited; and on the other hand, the BIOS code transmission mode is expanded, and the intelligent degree of the server architecture is increased.

The invention discloses a device for transferring and conveying yarn bags. The device comprises a bag pushing mechanism, a transferring trolley and a rail mechanism; the bag pushing mechanism is used for achieving moving of the yarn bags in the X axis direction and the Z axis direction, the transferring trolley is used for achieving moving of the yarn bags on the Y axis, the rail mechanism is used for enabling the transferring trolley to walk in the Y axis direction, the yarn bags full of products is transferred to the middle end of the transferring trolley through a chain plate from the previous procedure, the transferring trolley moves to the set work position through the rail mechanism, and finally, the yarn bags obtained after work are conveyed to an inlet of the next procedure through the bag pushing mechanism. According to the device, yarn bag transferring and conveying can be effectively achieved, meanwhile, it is ensured that in the yarn bag conveying process, products in the yarn bags are in order, the subsequent yarn bag treatment procedure is facilitated, and the automation production efficiency of the textile industry is effectively improved.

The invention relates to the technical field of PCB manufacturing and production, in particular to a PCB and a manufacturing method thereof. The PCB includes a heat dissipation substrate, and a firstcircuit layer, a second circuit layer and a third circuit layer arranged in turn on the heat dissipation substrate. A heat dissipation insulating dielectric layer is arranged between every two adjacent circuit layers. Each circuit layer is electrically connected with the other circuit layers through electricity conduction and heat conduction connectors. The third circuit layer is provided with anouter line which is electrically connected with the third circuit layer through a connector. The heat dissipation substrate and the insulating dielectric layer of the PCB have both the functions of insulation and heat dissipation, and the connectors have the functions of electricity conduction and heat conduction. Each circuit layer is electrically connected with the other circuit layers through connectors, and a smooth heat dissipation channel is formed. Therefore, the PCB has a better heat dissipation effect, which is conducive to high integration of electronic products.

The invention discloses a lead frame, including a first lead frame and a bridge frame, the first lead frame includes a first chip seat, a plurality of first connecting rods, a first external pin and a first outer frame, the first lead frame The outer end of a connecting rod is connected with the first outer frame, the inner end is connected with the first chip holder, the outer end of the first outer pin is connected with the first outer frame, and the inner end is connected with the first outer frame. The gate of the chip placed on the first chip holder is turned on, and the bridge frame includes a second chip holder, a plurality of second connecting rods and a second outer frame, and the outer ends of the second connecting rods are connected to the second outer frame. The second outer frame is connected, and its inner end is connected to the second chip holder, and the lower side of the second chip holder is provided with a folded edge. When the bridge frame is stacked on the top of the first lead frame, the The bottom of the folded edge is on the same level as the lower surface of the first chip holder, and a space for bonding chips is provided between the first chip holder and the second chip holder.