Electromigration reliability test structure and use method thereof

A technology for testing structure and reliability, applied in the direction of semiconductor/solid-state device testing/measurement, circuits, electrical components, etc., can solve the problem of difficult detection of leakage current, reduce the area, improve the detection efficiency, and is conducive to miniaturization. Effect

Active Publication Date: 2014-12-31
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide an electromigration reliability test structure

Method used

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  • Electromigration reliability test structure and use method thereof
  • Electromigration reliability test structure and use method thereof
  • Electromigration reliability test structure and use method thereof

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Embodiment Construction

[0023] It has been mentioned in the background art that currently, due to the small leakage current, it is difficult to detect, so it is impossible to effectively detect whether there is a protrusion defect. After a long-term experiment, the inventor found that when there is a protrusion defect, the circuit will change due to the protrusion touching the ring structure surrounding it. Considering that it is a short circuit, the resistance will have a large change, so the detection of the leakage current is abandoned. Turning to the sense resistor, it will be able to detect abnormalities very well.

[0024] The electromigration reliability test structure provided by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form, ...

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Abstract

The invention discloses an electromigration reliability test structure and a use method thereof. According to the electromigration reliability test structure and the use method thereof, a lead-out end of a third detection structure is connected with a detection end of a first detection structure, and therefore, when whether hillocks exist is detected, whether potential difference changes can be judged so that whether the hillocks exist can be detected, and tiny leakage current does not needed to be judged, and thus, detection efficiency can be greatly improved, and a situation in which leakage current is too tiny to detect can be eliminated; and a welding pad can be reduced, so that test area can be saved, and therefore, improvement of integration degree can be benefitted.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an electromigration reliability testing structure and a using method thereof in a testing process. Background technique [0002] Electro-migration (EM) is a common problem in the fabrication of integrated circuits. This is due to the gradual displacement of metal atoms due to the high current density. For occasions with high direct current densities, such as in the field of microelectronics, the electromigration effect is very critical. As the size of integrated circuit products continues to decrease, the practical significance of electromigration effects continues to increase. [0003] Electromigration occurs when part of the momentum of a moving electron is transferred to a neighboring activated ion, which causes the ion to leave its original position. Over time, this force causes huge numbers of atoms to move away from their original positions. Electromigration c...

Claims

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Application Information

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IPC IPC(8): H01L21/66H01L23/544
CPCH01L22/32H01L22/14
Inventor 郑雅文
Owner SEMICON MFG INT (SHANGHAI) CORP
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