Preparation method of area thick film silicon nitride
A thick-film silicon nitride and area technology, which is applied in the field of integrated optics, can solve problems such as difficult large-area growth, CMP inhomogeneity, and poor device sidewall steepness, and solve the problems that are not conducive to the preparation of highly integrated waveguides. device, beneficial to highly integrated, thick film growth effect
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[0027] In this embodiment, a method for preparing regional thick film silicon nitride, such as figure 1 Shown, including:
[0028] S1. A lower cladding layer and a sacrificial layer are sequentially formed on the semiconductor substrate along the thickness direction of the semiconductor substrate, and the height of the sacrificial layer is the same as the thickness of the preset waveguide device region;
[0029] On the basis of the above solution, further, in this embodiment, the semiconductor substrate is a silicon substrate, and in other embodiments, the semiconductor substrate may also be a quartz substrate.
[0030] On the basis of the above solution, further, the lower cladding layer is formed by thermal oxidation and / or chemical vapor deposition process. In other embodiments, the lower cladding layer can also be formed by physical vapor deposition process. The under-cladding material includes a solid cladding material with a refractive index lower than 1.7 and higher than 1, p...
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