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Fast recovery metal oxide semiconductor diode with low power consumption

An oxide semiconductor and metallization technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of easy breakdown, limited application scope, etc., and achieve a good compromise, reduce turn-off loss, and reduce conduction loss. Effect

Active Publication Date: 2012-04-25
GUIZHOU YAGUANG ELECTRONICS TECH
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Problems solved by technology

[0005] Since the reverse barrier of the Schottky diode is thin, and it is easy to break down on its surface, the reverse breakdown voltage (reverse withstand voltage) is relatively low, mostly not higher than 60V, and the highest is only about 100V. which limits its scope of application

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  • Fast recovery metal oxide semiconductor diode with low power consumption
  • Fast recovery metal oxide semiconductor diode with low power consumption
  • Fast recovery metal oxide semiconductor diode with low power consumption

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Embodiment Construction

[0020] Adopting a low power consumption fast recovery metal oxide semiconductor diode of the present invention can realize low conduction voltage drop, high reverse breakdown voltage, good reverse recovery characteristics, and better forward conduction voltage drop and turn-off losses. With the development of semiconductor technology, more fast and low-power consumption devices can be produced by adopting the invention.

[0021] A low-power fast-recovery metal-oxide-semiconductor diode, such as figure 1 shown, including the metallized cathode 1, N + Substrate area 2, N - Epitaxial layer 3 and metallized anode 10; said metallized cathode 1 is located at N + backside of substrate region 2, the N - The epitaxial layer 3 is located at N + Substrate region 2 front side. The low power consumption fast recovery metal oxide semiconductor diode also includes a junction field effect transistor region 4 and an electron accumulation layer structure 12; the junction field effect transi...

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Abstract

A fast recovery metal oxide semiconductor diode with low power consumption belongs to the technical field of semiconductor devices. The diode is provided with a junction field effect transistor region (4) and an electron accumulation layer structure (12), wherein the junction field effect transistor region (4) comprises two deep P regions (5) and an N-epitaxial layer (3) between the two deep P regions; and the electron accumulation layer structure (12) comprises two N heavily doped regions (7), the N-epitaxial layer (3), a gate oxide layer (8) on the surface of the N-epitaxial layer (3) and agate electrode (9). By utilizing the following surface electric field effect of the metal oxide semiconductor structure: a plurality of sub-accumulation layers are formed in case of forward voltage while a plurality of sub-depletion layers are formed in case of backward voltage, the diode can obtain quite low turn-on voltage drop and can simultaneously bear high reverse breakdown voltage and leakless current, thus better realizing compromise between the forward turn-on voltage drop and the backward recovery time.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices and relates to a metal oxide semiconductor diode (Schottky diode), in particular to a fast recovery metal oxide semiconductor diode with low power consumption. Background technique [0002] In electronic circuits, diodes are one of the most commonly used basic electronic components; in power electronic circuits, diodes go hand in hand with switching devices and are indispensable. Traditional rectifier diodes mainly include PN junction diodes and Schottky diodes. Among them, the PN junction diode has a large forward conduction voltage drop and a long reverse recovery time, but the PN junction diode has better stability and can work at high voltage; while the Schottky diode has a small forward conduction voltage drop at low voltage , the reverse recovery time is short, but the leakage current of the Schottky diode is relatively high and unstable when it reverses. In order to improve ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L29/06
Inventor 李泽宏姜贯军余士江邓光平李婷谢加雄张超任敏刘小龙张波
Owner GUIZHOU YAGUANG ELECTRONICS TECH
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