A Si-based diode (10, 10′, 100) is formed by epitaxially depositing a Si-based diode structure on a silicon substrate. The Si-based diode structure includes a Si-based pn junction (16, 16′, 18, 18′, 30, 32, 160, 161) having a backward diode current-voltage characteristic in which the forward tunneling current is substantially smaller than the backward tunneling current at comparable voltage levels. In some embodiments, the Si-based pn junction includes at least one non-silicon or silicon alloy layer such as at least one SiGe layer (16, 16′, 160, 161). In some embodiments, at least one delta doping (30, 32) is disposed on the silicon substrate in or near the pn junction, that together with the Si-based pn junction define an electrical junction having the backward diode current-voltage characteristic. A large area detector array may include a plurality of such Si-based diodes (10, 10′, 100).