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Preparation method for gold-palladium electrode of polycrystalline mercury iodide detector

A mercury iodide and detector technology, which is applied in circuits, electrical components, semiconductor devices, etc., can solve the problems that it cannot be used as a polycrystalline mercury iodide detector electrode, the thickness of the electrode is different, and the uniformity of the electrode is not good.

Inactive Publication Date: 2013-03-06
SHANGHAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the chemical activity of mercury iodide, it can chemically react with common electrode materials such as aluminum, copper, silver, etc., and ordinary metals cannot be used as electrodes for polycrystalline mercury iodide detectors.
Moreover, the uniformity of the electrode prepared by thermal evaporation is not good, and the thickness of the electrode is not uniform.

Method used

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  • Preparation method for gold-palladium electrode of polycrystalline mercury iodide detector

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Embodiment Construction

[0017] Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described as follows:

[0018] Implementation column 1

[0019] A kind of polycrystalline mercury iodide detector gold palladium material electrode preparation method, concrete steps are as follows:

[0020] 1) Growth of polycrystalline mercury iodide thick film: Ultrasonic physical vapor deposition method is used in a pressure vacuum chamber, and the vacuum degree is required to reach 10 -3 A thick film of polycrystalline mercury iodide was deposited on a thin film transistor substrate under Pa conditions; the temperature of the oil bath was kept at 70 degrees Celsius, and the deposition time was kept for 3 hours; the thickness of the prepared thick film was 100 microns, and it grew preferentially along the (001) crystal direction. And the diameter of a single particle is maintained at 30 nanometers, and the particle gap is less than 20 nanometers;

[0021] 2) Treatmen...

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Abstract

The invention relates to a preparation method for a gold-palladium electrode of a polycrystalline mercury iodide detector. The preparation method specifically comprises the following steps: a) growing a polycrystalline mercury iodide thick film; b) treating the surface of the polycrystalline mercury iodide thick film; c) preparing an electrode material; and d) thermally evaporating and preparing the electrode. The preparation method provided by the invention has the advantages of simpleness in technology and easiness in operation, a pattern of an electrode mask plate is variable and the electrode of the detector can be extensively prepared. The polycrystalline mercury iodide detector prepared according to the preparation method for the electrode provided by the invention has the advantages of small leak current, high detecting efficiency, obvious X-ray pixel, and the like.

Description

technical field [0001] The invention relates to a method for preparing a polycrystalline mercury iodide detector gold-palladium material electrode, which is a vacuum coating technology and belongs to the field of semiconductor detector electrode preparation technology. Background technique [0002] Mercury iodide (HgI 2 ) Large band gap (2.13eV), high atomic number (M Hg =80, M I =53), high resistivity (ρ>10 13 Ω cm), high ionization efficiency (52%), and excellent physical, chemical and electrical properties, making mercury iodide have the advantages of large photoelectric linear absorption coefficient, high detection efficiency, and good energy resolution. Rays (especially low-energy X and γ-rays) have high detection efficiency and good energy resolution, and are widely used in fluorescence analysis, aerospace and nuclear medicine, and high-energy physics. However, the preparation of mercury iodide detector electrodes has always been a difficult problem. [0003] T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 刘功龙马磊史伟民廖阳吕燕芳李季戎钱隽陶佳佳
Owner SHANGHAI UNIV
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