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Radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) component and manufacture method

A manufacturing method and device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of snapback effect, failure of device voltage resistance, large base resistance, etc., to improve the return point voltage, The effect of reducing series resistance and avoiding device burnout

Inactive Publication Date: 2013-04-10
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The metal can reduce the resistance of the substrate and improve the thermal diffusion ability, but the device with this structure still has the base resistance R B Larger, there may be a snapback effect, causing the tube to burn and other device voltage resistance failures to occur

Method used

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  • Radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) component and manufacture method
  • Radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) component and manufacture method
  • Radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) component and manufacture method

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Embodiment Construction

[0043] The structure of RFLDMOS device described in the present invention is as Figure 13 Shown:

[0044] On the P-type silicon substrate 311, there is a lightly doped P-type epitaxy 312;

[0045] In the lightly doped P-type epitaxy 312, there is an N-type lightly doped drain drift region 317 and a P-type channel region 316 in contact with it;

[0046] The N-type lightly doped drain drift region 317 includes the drain region 321 of the RFLDMOS device, and the surface of the drain region 321 has a metal silicide 319 leading to the drain of the RFLDMOS device;

[0047] The P-type channel region 316 includes a heavily doped P-type channel connection region 322 and a heavily doped N-type region 320 abutting against it. The heavily doped N-type region 320 is the RFLDMOS device. source area;

[0048] The surface of the heavily doped P-type channel connection region 322 and the source region 320 of the RFLDMOS is covered with a layer of metal silicide 319 leading to the source of...

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Abstract

The invention discloses a radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) component. Based on a component structure using tungsten-subsidence electric connection, a middle doped P type buried layer is arranged in a P type heave doped region on one side on a source end channel in an ion injection mode after an ion injection process and a thermal propelling process in a channel and a light dope diffusion drift region. The P type buried layer can reduce base electrode resistance of a parasitic non-protein nitrogen (NPN) pipe, so that snapback effect is not prone to generate. A reversed diode formed by a source electrode, the channel and the buried layer can strangulate drain-source voltage of an LDMOS and can sink extra current on a substrate. The invention further discloses a manufacture method for the RF LDMOS component. In the process realization, the manufacture method only adds one step of ion injection based on an existing process so as to be easy to implement.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to an RFLDMOS applied to high-power radio frequency signal amplification. The present invention also relates to a manufacturing method of said RFLDMOS device. Background technique [0002] RFLDMOS (Radio Frequency Laterally Diffused Metal Oxide Semiconductor) is a semiconductor with high gain, high linearity, high withstand voltage, and high output power, which is widely used in radio and television transmitting base stations, mobile transmitting base stations, radars, etc. RF power devices have two operating voltages of 28V and 50V, and the corresponding breakdown voltage requirements are 70V and 120V respectively. The basic structure of the device is as figure 1 As shown, it is an N-type device, and the higher withstand voltage is determined by the length of the N-type low-doped drift region 6 (the distance from the heavily doped N-type drain terminal 7 to the ed...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/78H01L21/336
CPCH01L29/7835H01L29/1045H01L29/1083H01L29/4175
Inventor 周正良遇寒马彪
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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