The invention provides a lateral direction SOI
power semiconductor device, and belongs to the technical field of power
semiconductor devices. The cellular structure of the lateral direction SOI
power semiconductor device comprises a substrate, an insulating
dielectric layer and a device
active layer arranged on the insulating medium layer, wherein the device
active layer comprises a source region, a drain region, grids and a drift region. The drift region between the source region and the drain region is a sandwich structure formed by sandwiching a second
semiconductor doping region between two first
semiconductor doping regions parallel to the lateral direction of the device, the
conduction type of the first semiconductor
doping regions is different from that of a first
conduction type semiconductor region in a source region structure, and the outer side faces of the two first semiconductor doping areas are respectively provided with a high k
dielectric layer. The lateral direction SOI
power semiconductor device can remit the substrate-assisted depletion effect existing in lateral direction super junction SOI power semiconductor devices, is free of the problem that charge balance of a super junction structure needs to be taken into consideration in the super junction power semiconductor devices, has higher reverse
voltage resistant performance and lower forward on-resistance, and is relatively low in difficulty and cost of the
manufacturing technology.