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341results about How to "Low manufacturing process cost" patented technology

High-entropy alloy particle reinforced aluminum base composite material and stirring casting preparation process thereof

ActiveCN105478724AAvoid interfacial chemical reactionsAvoid formingHigh entropy alloysToughness
The invention discloses a high-entropy alloy particle reinforced aluminum base composite material and a stirring casting preparation process thereof. The preparation process adopts mechanical alloying to prepare high-entropy alloy powder and screen to obtain high-entropy alloy particles; the high-entropy alloy particles are sealed by adopting an aluminum alloy pipe having the same material with a basal body; the aluminum alloy pipe weighed in a segmented manner is added in the molten basal body; the high-entropy alloy particles are dispersed by a stirring mode; and the high-entropy alloy particle reinforced aluminum base composite material is prepared by a casting process. The high-entropy alloy particles are 0.1-35%; aluminum alloys are 65-99.9%; and the sum of the two is 1. The high-entropy alloy particles in the structure of the prepared composite material are uniformly dispersed; the high-entropy alloy and aluminum alloy interface bonding compatibility is excellent; the strength and the toughness are excellent; the preparation process is simple; the powder has no need to be treated; the cost is low; the stability is good; and the composite material is suitable for large-batch production and standard production, and is excellent in promotion and application prospect.
Owner:GUANGDONG XINGFA ALUMINUM +1

Grain refinement and modification master alloy for aluminum and aluminum alloy and method for preparing same

The invention discloses a grain refinement and modification master alloy for aluminum and an aluminum alloy, which comprises the following components by weight percentage: 3.0 to 10.0 percent of titanium, 1.0 to 3.0 percent of boron, 0.5 to 5.0 percent of strontium, 0.5 to 2.0 percent of cerium-enriched rare earth, and the balance of aluminum. The preparation method for the master alloy comprises the following steps: weighting potassium fluotitanate, potassium fluoborate, a mixed rare earth ingot, an alloy, and a pure aluminum ingot in proportion; drying the potassium fluotitanate and the potassium fluoborate; heating and melting the aluminum ingot and the aluminum rare earth ingot, adding the mixture of the potassium fluotitanate and the potassium fluoborate, and stirring until the melted mass is completely reacted; adding a Al-Sr master alloy, stirring, and performing heat preservation and slagging off; adding hexachloroethane and evenly stirring; and standing, performing heat preservation for 20 to 30 minutes, casting into an ingot and then extruding into a wire. The master alloy can be well combined with an interface of an aluminum matrix; the particle phase is evenly distributed; the grain size of the refinement phase is small; the activated Sr is enough to ensure the following modification; the conglobation of the refinement phase is effectively reduced, and the degradation is inhibited; and the preparation process is low in cost.
Owner:广州工业投资控股集团有限公司 +1

Lateral direction SOI power semiconductor device

The invention provides a lateral direction SOI power semiconductor device, and belongs to the technical field of power semiconductor devices. The cellular structure of the lateral direction SOI power semiconductor device comprises a substrate, an insulating dielectric layer and a device active layer arranged on the insulating medium layer, wherein the device active layer comprises a source region, a drain region, grids and a drift region. The drift region between the source region and the drain region is a sandwich structure formed by sandwiching a second semiconductor doping region between two first semiconductor doping regions parallel to the lateral direction of the device, the conduction type of the first semiconductor doping regions is different from that of a first conduction type semiconductor region in a source region structure, and the outer side faces of the two first semiconductor doping areas are respectively provided with a high k dielectric layer. The lateral direction SOI power semiconductor device can remit the substrate-assisted depletion effect existing in lateral direction super junction SOI power semiconductor devices, is free of the problem that charge balance of a super junction structure needs to be taken into consideration in the super junction power semiconductor devices, has higher reverse voltage resistant performance and lower forward on-resistance, and is relatively low in difficulty and cost of the manufacturing technology.
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA

Foamed aluminum-corrugated plate composite sandwich plate and preparation method thereof

The invention relates to a foamed aluminum-corrugated plate composite sandwich plate and a preparation method thereof. The method comprises the following steps: firstly, manufacturing a corrugated core body; welding the corrugated core body to a panel to form a corrugated plate; putting basal powder and a foaming agent in a mixing machine for uniform mixing, and then extruding the mixed powder into a primary blank; putting the blank in a mould for pressing, filling the inside of the corrugated plate with a pressed foaming prefabricated body, and putting the corrugated plate in an atmosphere furnace for foaming; and heating and keeping warm until the prefabricated body is expanded to form foamed aluminum with which pores of the corrugated plate are completely filled, and then cooling. By using a powder metallurgy method, the inside of lattice metal is foamed in situ to form the metallurgical-bonding foamed aluminum-corrugated plate composite sandwich plate. The excellent mechanical property of the lattice metal and the advantages of energy absorption, sound insulation, shock absorption and thermal insulation of the foamed aluminum are utilized, so that the multifunctional coupling is realized, and the structure and function integration material with the relatively excellent comprehensive performance is obtained. The bonding strength is effectively improved by virtue of metallurgical bonding, and the performance of the composite material is further improved.
Owner:XI AN JIAOTONG UNIV +1

Method of manufacturing back contact heterojunction single crystalline silicon solar cell

The invention provides a method of manufacturing a back contact heterojunction single crystalline silicon solar cell, which belongs to the technical field of solar photovoltaics. The method comprises the following steps: (1) cleaning of single crystalline silicon, removal of a damage layer and etching are carried out; (2) a single crystalline silicon front surface passivation layer is formed, and coating of an anti-reflective layer is carried out; (3) coating of a single crystalline silicon back surface passivation layer is carried out; (4) a mask technology is adopted to form a P-type amorphous silicon pattern through coating of the single crystalline silicon back surface; (5) a mask technology is adopted to form an N-type amorphous silicon pattern through coating of the single crystalline silicon back surface; (6) a mask technology is adopted to form a protection film pattern through coating of the back surface; and (7) a chemical plating plus electroplating technology is adopted to form a contact electrode for a transmitting electrode and a base electrode on the back surface. the method of the invention has the advantages of simple process and low manufacturing cost whether for coating and positioning of a P / N junction or for back electrode manufacturing, and can be applied to mass production of the back contact heterojunction single crystalline silicon solar cells.
Owner:深圳市科纳能薄膜科技有限公司

High quality aluminum titanium boron refiner and preparation method thereof

InactiveCN105925854ALow cost of preparation processEasy to operateSlagAluminium
The invention discloses a preparation method of a high quality aluminum titanium boron refiner. The prepared high quality aluminum titanium boron refiner comprises, by mass, 4.8-5.5% of Ti, 0.8-1.2% of B and the balance Al. The preparation method of the intermediate alloy comprises the steps that the quantities of potassium fluoborate and potassium fluotitanate required for two-time feeding are calculated according to a chemical reaction equation; the feeding method is two-time feeding; according to the matching ratio of villiaumite two times of feeding, the mass ratio of the potassium fluotitanate in the first feeding to the potassium fluotitanate in the second feeding is 1.09-1.52 and the mass ratio of the potassium fluoborate in the first feeding to the potassium fluoborate in the second feeding is 0-0.2; but it should be always guaranteed that the mass ratio of the potassium fluoborate to the potassium fluotitanate in the second feeding is 1.05:1; the potassium fluotitanate and the potassium fluoborate which are well proportioned are evenly mixed and dried, and added into a pure aluminum melt at a constant speed in two times; the mixture obtained in the previous step is stored for a period of time and then mixed for 3-5 minutes; and calcium fluoride is added into the mixture, water slag is removed 2-5 minutes later, and sticks are formed by pouring.
Owner:SHENYANG POLYTECHNIC UNIV
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