Three-dimensional memory and formation method of channel pore structure thereof

A channel structure and memory technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of increased etching time, high cost, and low process efficiency

Active Publication Date: 2017-05-10
YANGTZE MEMORY TECH CO LTD
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  • Abstract
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Problems solved by technology

In particular, when the number of stacked layers in the three-dimensional memory reaches 120 or more, and then a single etching method is used to form channel holes penetrating through each stacked layer, there is a phenomenon that the etching time increases exponentially, the process efficiency is low, and the cost higher

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  • Three-dimensional memory and formation method of channel pore structure thereof
  • Three-dimensional memory and formation method of channel pore structure thereof
  • Three-dimensional memory and formation method of channel pore structure thereof

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Embodiment Construction

[0105] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0106] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0107] An embodiment of the pre...

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Abstract

The embodiment of the invention discloses a three-dimensional memory and a formation method of a channel pore structure thereof. According to the method, the channel pore structure in the three-dimensional memory is formed through a twice through-hole formation technology of a first through hole and a second through hole, so that the process difficulty and cost of the channel pore structure are greatly reduced, the problems of high process difficulty and high cost caused by ultrahigh through hole depth-to-width ratio under the same caliber are solved, and meanwhile the manufacturing process difficulty and cost of the three-dimensional memory are also reduced.

Description

technical field [0001] The invention relates to the technical field of three-dimensional memory, in particular to a three-dimensional memory and a method for forming a channel hole structure thereof. Background technique [0002] As the number of layers of ON (Oxide / Nitride) in three-dimensional memory (such as 3D NAND) increases, the depth of the channel hole formed in the three-dimensional memory becomes larger and larger, and the channel hole is formed by a single etching process. When , in the case of the same pore diameter, the greater the depth of the channel hole, the more difficult it is to etch. In particular, when the number of stacked layers in the three-dimensional memory reaches 120 or more, and then a single etching method is used to form channel holes penetrating through each stacked layer, there is a phenomenon that the etching time increases exponentially, the process efficiency is low, and the cost higher. Contents of the invention [0003] In order to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
CPCH01L21/768H01L21/76805H01L21/76829H01L21/76831
Inventor 吕震宇施文广吴关平潘锋万先进陈保友
Owner YANGTZE MEMORY TECH CO LTD
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