Lateral direction SOI power semiconductor device

Abstract

The invention provides a lateral direction SOI power semiconductor device, and belongs to the technical field of power semiconductor devices. The cellular structure of the lateral direction SOI power semiconductor device comprises a substrate, an insulating dielectric layer and a device active layer arranged on the insulating medium layer, wherein the device active layer comprises a source region, a drain region, grids and a drift region. The drift region between the source region and the drain region is a sandwich structure formed by sandwiching a second semiconductor doping region between two first semiconductor doping regions parallel to the lateral direction of the device, the conduction type of the first semiconductor doping regions is different from that of a first conduction type semiconductor region in a source region structure, and the outer side faces of the two first semiconductor doping areas are respectively provided with a high k dielectric layer. The lateral direction SOI power semiconductor device can remit the substrate-assisted depletion effect existing in lateral direction super junction SOI power semiconductor devices, is free of the problem that charge balance of a super junction structure needs to be taken into consideration in the super junction power semiconductor devices, has higher reverse voltage resistant performance and lower forward on-resistance, and is relatively low in difficulty and cost of the manufacturing technology.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices and relates to SOI power semiconductor devices. Background technique [0002] The active layer of the SOI (silicon-on-insulator) circuit is separated from the substrate, and the high-voltage unit and the low-voltage unit are completely separated by an insulating layer. Compared with bulk silicon technology, SOI technology has the advantages of high speed, low power consumption, high integration and easy isolation, etc., and weakens the latch-up effect and has strong anti-radiation ability, which makes the reliability and anti-software of SOI integrated circuits The failure capability is greatly improved. [0003] Power MOSFET (metal oxide semiconductor Field-Effect Transistor) is a multi-subconduction device with high input impedance, easy to drive, fast speed, high frequency, positive temperature coefficient of on-resistance, wide safe operating area and parallel use, etc. a...

AI Technical Summary

Problems solved by technology

[0008] In order to solve the technical problems of the existing lateral super-junction SOI power semiconductor devices, such as difficult manufacturing process, high cost and substrate-assisted depletion effect, the present invention provides a lateral SOI power semiconductor device

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