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InP/ZnS quantum dot and CIS/ZnS quantum dot for white-light LED and preparation method of InP/ZnS quantum dot and CIS/ZnS quantum dot

A quantum dot and white light technology, which is applied in the field of white light LED and its preparation, can solve the problems of poor stability, narrow color gamut, and poor color rendering, and achieve high stability, low synthesis temperature, and short preparation time.

Inactive Publication Date: 2016-05-11
CHINA JILIANG UNIV
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Problems solved by technology

[0005] The purpose of the present invention is to provide a kind of InP / ZnS quantum dots and CIS / ZnS quantum dots for white light LEDs and its preparation method, which solves the shortcomings of poor color rendering, narrow color gamut and poor stability in the current white light LED technology.

Method used

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Embodiment Construction

[0021] The present invention is set forth below through specific examples, but the present invention is not limited to these examples.

[0022] InP / ZnS quantum dots and CIS / ZnS quantum dots for white light LEDs and their preparation methods

[0023] (1) 0.9mmolInCl 3 , 1.2mmol ZnO, and 6ml oleylamine (OLA) were added to a three-necked flask, heated to 280°C and stirred for 5 minutes under an argon atmosphere, then cooled to 190°C, and then quickly added 0.25ml (P(N(CH 3 ) 2 ) 3 ), stirring and reacting for 5 minutes, then raising the temperature of the above solution to 200° C., injecting 1 ml of dodecanethiol DDT solution, reacting for 7 hours, precipitating the obtained product, purifying, evaporating in a vacuum, and finally obtaining InP / ZnS quantum dots;

[0024] (3) 0.1mmolCuI, 0.5mmolIn(Ac) 3 and 4ml of octadecene ODE were heated to 230°C under argon atmosphere and stirred for 10min, then added 4ml of dodecanethiol DDT solution, and reacted for 5min; the above solut...

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Abstract

The invention discloses an InP / ZnS quantum dot and a CIS / ZnS quantum dot for a white-light LED and a preparation method of the InP / ZnS quantum dot and the CIS / ZnS quantum dot. Mixed fluorescent powder of the green luminous InP / ZnS quantum dot and the orange-red luminous CIS / ZnS quantum dot is prepared as a fluorescent layer; and a blue chip is selected to be modulated into the white LED as an excitation light source. Each of the InP / ZnS quantum dot and CIS / ZnS quantum dot structurally comprises a cooling base (1), a light picking lens (2), an electrode (3), a gold line (4), silica (5), a silica gel layer (6) of the mixed fluorescent powder of the InP / ZnS quantum dot and the CIS / ZnS quantum dot, and the blue chip (7) with the peak wavelength of 440-480nm. The used fluorescent material is low in toxicity and low in cost; the synthesized white-light LED is simple in structure; the defects of poor color rendering property, relatively narrow color gamut, poor stability and the like in an existing LED technology are overcome; and the InP / ZnS quantum dot and the CIS / ZnS quantum dot have good development prospects.

Description

technical field [0001] The invention relates to a white light LED and a preparation method thereof, more specifically to a white light LED prepared by using quantum dots, and belongs to the technical field of semiconductor lighting. Background technique [0002] White light-emitting diode (LED) is called the fourth generation of lighting source. As a new generation of solid light source, in addition to overcoming the shortcomings of traditional incandescent and fluorescent lamps such as high energy consumption, fragility, and pollution, it also has small size and environmental protection. , fast response, long life, planar packaging, high luminous intensity, high efficiency, energy saving, vibration resistance, low voltage drive, and no environmental pollution. Especially in recent years, with the rapid development of blue, purple and ultraviolet LEDs, white LEDs have great application prospects in the field of lighting, and are recognized as green lighting sources that repl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/50H01L33/00C09K11/54C09K11/56C09K11/62C09K11/88
CPCC09K11/54C09K11/56C09K11/62C09K11/88H01L33/005H01L33/50Y02B20/00
Inventor 刘泽旭沈常宇魏健包立峰
Owner CHINA JILIANG UNIV
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