Three-junction solar cell

A solar cell, three-junction technology, applied in the field of solar cells, can solve the problems of unavailability of part of the current of the top cell and the bottom cell, poor current matching of the three sub-cells, and difficulty in the photoelectric conversion efficiency of the battery, so as to improve the photoelectric conversion efficiency, The effect of improving conversion efficiency and increasing current

Inactive Publication Date: 2009-08-05
SOUTHEAST UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in order to further improve its photoelectric conversion efficiency, it is necessary to solve the problem of poor current matching of the three sub-cells in the triple-junction battery.
In the existing three-junction battery, the current of the middle sub-battery is smaller than that of the top battery and the bottom battery, so that the final output current is limited by the middle sub-cell, so that part of the current of the top battery and the bottom battery cannot be used, which further improves the battery life. Photoelectric conversion efficiency poses difficulties

Method used

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  • Three-junction solar cell

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Embodiment 1

[0025] A solar cell, characterized in that the cell structure is as follows: from bottom to top, it includes a back electrode layer 1, a bottom cell layer, a transition layer, a lower tunnel junction layer, an intermediate cell layer, an upper tunnel junction layer, a top cell layer, and an anti-reflection layer. Film layer 14 and upper electrode layer 15, wherein:

[0026] The bottom cell layer consists of a p-type Ge single crystal substrate 2 and an n-type Ge epitaxial layer 3 from bottom to top;

[0027] The transition layer is an n-type GaAs layer a4;

[0028] The lower tunnel junction layer consists of a heavily doped n-type GaAs layer a5 and a heavily doped p-type GaAs layer a6 from bottom to top;

[0029] The middle battery layer is composed of a p-type GaAs layer 7 and an n-type GaAs layer b9 and a quantum well structure 8 sandwiched between the p-type GaAs layer 7 and the n-type GaAs layer b9 from bottom to top, and the quantum well structure 8 is divided into The ...

Embodiment 2

[0035] A solar cell, characterized in that the cell structure is as follows: from bottom to top, it includes a back electrode layer 1, a bottom cell layer, a transition layer, a lower tunnel junction layer, an intermediate cell layer, an upper tunnel junction layer, a top cell layer, and an anti-reflection layer. Film layer 14 and upper electrode layer 15, wherein:

[0036] The bottom cell layer consists of a p-type Ge single crystal substrate 2 and an n-type Ge epitaxial layer 3 from bottom to top;

[0037] The transition layer is an n-type GaAs layer a4;

[0038] The lower tunnel junction layer consists of a heavily doped n-type GaAs layer a5 and a heavily doped p-type GaAs layer a6 from bottom to top;

[0039] The middle battery layer is composed of a p-type GaAs layer 7 and an n-type GaAs layer b9 and a quantum well structure 8 sandwiched between the p-type GaAs layer 7 and the n-type GaAs layer b9 from bottom to top, and the quantum well structure 8 is divided into The ...

Embodiment 3

[0045] A solar cell, characterized in that the cell structure is as follows: from bottom to top, it includes a back electrode layer 1, a bottom cell layer, a transition layer, a lower tunnel junction layer, an intermediate cell layer, an upper tunnel junction layer, a top cell layer, and an anti-reflection layer. Film layer 14 and upper electrode layer 15, wherein:

[0046] The bottom cell layer consists of a p-type Ge single crystal substrate 2 and an n-type Ge epitaxial layer 3 from bottom to top;

[0047] The transition layer is an n-type GaAs layer a4;

[0048] The lower tunnel junction layer consists of a heavily doped n-type GaAs layer a5 and a heavily doped p-type GaAs layer a6 from bottom to top;

[0049] The middle battery layer is composed of a p-type GaAs layer 7 and an n-type GaAs layer b9 and a quantum well structure 8 sandwiched between the p-type GaAs layer 7 and the n-type GaAs layer b9 from bottom to top, and the quantum well structure 8 is divided into A qu...

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Abstract

The invention provides a solar cell which comprises a quantum well structure; the cell structure comprises from bottom to top a back electrode, a bottom cell consisting of a p-typed germanium substrate and an n-typed germanium epitaxial layer, an n-typed GaAs layer transition layer, a lower tunneling junction, a middle cell consisting of a p-typed GaAs layer, the quantum well structure and an n-typed GaAs layer, an upper tunneling junction, a top cell consisting of a p-typed GaInP layer and an n-typed GaInP layer, an anti-reflection film and an upper electrode, wherein, the quantum well structure is divided into a quantum well layer which is made by three to five clusters of semiconductor materials and a barrier layer; and the solar cell can extend the absorption spectra of the middle cell, improve the current matching among three sub-cells, and enhance the conversion efficiency of the cell.

Description

1. Technical field [0001] The invention relates to a solar cell, in particular to a solar cell containing a quantum well structure. 2. Background technology [0002] The triple-junction GaInP / GaAs / Ge solar cell is currently the solar cell with the highest conversion efficiency in the world. However, in order to further improve its photoelectric conversion efficiency, it is necessary to solve the problem of poor current matching of the three sub-cells in the triple-junction cell. In the existing three-junction battery, the current of the middle sub-battery is smaller than that of the top battery and the bottom battery, so that the final output current is limited by the middle sub-battery, so that part of the current of the top battery and the bottom battery cannot be used, which further improves the battery life. Photoelectric conversion efficiency poses difficulties. 3. Contents of the invention [0003] technical problem: [0004] The purpose of the present invention i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/042
CPCY02E10/52Y02E10/50
Inventor 娄朝刚孙强雷威张晓兵孙彦铮许军
Owner SOUTHEAST UNIV
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