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Preparation method of multi-junction solar cell

A technology of multi-junction solar cells and manufacturing methods, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., to achieve the effect of improving photoelectric conversion efficiency

Inactive Publication Date: 2010-06-09
上海联孚新能源科技集团有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The technology of preparing multi-junction solar cells through the magnetization effect of a magnetic field has not yet appeared

Method used

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  • Preparation method of multi-junction solar cell
  • Preparation method of multi-junction solar cell
  • Preparation method of multi-junction solar cell

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Embodiment Construction

[0036] The technical solutions of the present invention will be further described below in conjunction with embodiments.

[0037] Such as Figure 1-4 Shown is the structure of a multi-junction solar cell with a Si / GaAs / InGaP three-layer structure. The bottom cell 1 is a Si PN junction cell, the middle cell 3 is a GaAs PN junction cell, and the top cell 5 is an InGaP PN junction cell. , Each sub-cell is directly grown on the silicon cell substrate.

[0038] Preparation method of multi-junction solar cell:

[0039] First, use 180μm thick P-type monocrystalline silicon to fabricate solar cells by chemical etching. The high-efficiency suede preparation is carried out in a magnetic field. That is, the monocrystalline silicon wafer is put into a suede preparation reactor equipped with a reaction solution. During the reaction, the suede preparation reactor is placed in a magnetic field below 15T. The ratio of the reaction solution is: sodium hydroxide or potassium hydroxide with a mass pe...

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Abstract

The invention discloses a preparation method of a multi-junction solar cell. The solar cell has a Si / GaAs / InGaP three-layer structure, wherein the bottom cell is a PN junction cell of Si, the intermediate cell is a PN junction cell of GaAs, the top cell is a PN junction cell of InGaP and each sub-cell directly grows on the substrate of a silicon cell. The method comprises the following processing steps: adopting chemical corrosion method to grow dense and uniform texture on the surface of monocrystalline wafer under magnetic field, diffusing to prepare PN junction and form the bottom cell in a high temperature diffusion furnace; growing GaAs tunnel junction on the surface of silicon wafer N-type junction of the prepared PN junction; growing the GaAs cell on the tunnel junction; growing the GaAs tunnel junction on the N-type junction of the GaAs cell; growing the InGaP cell on the tunnel junction; growing an anti-reflective film on the InGaP cell; forming ohmic contact by using screen printing; and obtaining the multi-junction solar cell.

Description

Technical field [0001] The invention belongs to the field of solar cells in the technical field of inorganic materials, and relates to a manufacturing method of a multi-junction solar cell. Background technique [0002] Solar energy is a clean, pollution-free, and inexhaustible natural energy source. Almost all of the natural resources that humans depend on are converted to solar energy. Direct conversion of solar energy to electrical energy is an important technology for large-scale use of solar energy. basis. Since Bell Labs developed the first polysilicon solar cell with an efficiency of 6% in 1954, the solar cell market has been increasing at an annual rate of 35%. [0003] Due to the relatively high conversion efficiency and relatively low cost of traditional crystalline silicon cells, they have gradually become the leading products in the market. As the technology of thin film batteries is not very mature, it seems difficult to replace silicon solar cells in the short term....

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 张根发苏青峰赖建明冯世军杨文平韩新江
Owner 上海联孚新能源科技集团有限公司
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