Multijunction gallium arsenide solar cell

A solar cell, gallium arsenide technology, applied in the field of solar cells, can solve problems such as the reduction of solar cell efficiency, and achieve the effects of improving current density, reducing reflection, and improving conversion efficiency

Inactive Publication Date: 2010-06-30
SHANGHAI INST OF SPACE POWER SOURCES +1
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Problems solved by technology

In order to reduce the reflection of incident light and further improve the efficiency of GaInP/InGaAs/Ge triple-junction solar cells, we analyzed the cause of this phenomenon: GaInP/InGaAs/Ge triple-junction solar cells use three sub-cells to absorb incident light of different energies respectively , the tunneling junction (AlGaAs(p ++ )-GaInP(n ++ ) and GaAs(p ++ )-GaAs(n ++ ) connection, involving GaInP, InGaAs, AlInP, AlGaAs,

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Embodiment Construction

[0012] see figure 1 , figure 2 , the multi-junction gallium arsenide solar cell of the present invention includes a top cell 1 composed of AlInP (n+, 35nm) / GaInP (n / p, 520nm) / AlInP (p+, 120nm), and a top cell 1 composed of AlInP (n+, 120nm) / InGaAs(n / p, 3.5μm) / AlGaAs(p+, 100nm) composed of medium cell 2 and GaInP(n + , 100nm) / Ge(n + , 100nm) / Ge(p + , 170μm) constitutes the bottom cell 3, between the top cell and the middle cell is provided with AlInP (p + ) / AlGaAs(p ++ )-GaInP(n ++ ) / AlInP(n + ) or AlGaInP (p + ) / AlGaAs(p ++ )-GaInP(n ++ ) / AlInP(n + ) to form a tunnel junction connection structure 4 . Among them, 41 represents AlInP (p + ) or AlGaInP (p + ), which is the back field of the top cell, with a thickness of 100nm to 150nm; 44 represents AlInP(n + ), which is the back field of the battery, with a thickness of 100nm to 150nm; 42 means AlGaAs (p ++ ), the thickness is 10nm ~ 15nm; 43 means GaInP (n ++ ), with a thickness of 10nm to 15nm. (p + ) means...

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Abstract

The invention relates to a multijunction gallium arsenide solar cell, comprising a top cell mainly composed of GaInP, an intermediate cell mainly composed of InGaAs and a bottom cell mainly composed of Ge, wherein an AlInP(p+)/AlGaAs(p++)-GaInP(n++)/AlInP(n+) or AlGaInP(p+)/AlGaAs(p++)-GaInP(n++)/AlInP(n+) tunneling junction connection structure is arranged between the top cell and the intermediate cell. As the above tunneling junction connection structure is adopted, the multijunction gallium arsenide solar cell according to the invention can not only reduce the reflection of incident light prominently and improve the current density of the cells, but can also enhance the conversion efficiency of three-junction cell.

Description

technical field [0001] The invention relates to a solar cell, in particular to a multi-junction gallium arsenide solar cell. Background technique [0002] The efficiency of GaInP / InGaAs / Ge triple-junction solar cells has exceeded 40%, which is currently the most efficient solar cell and has become one of the research hotspots. In the process of developing GaInP / InGaAs / Ge triple-junction solar cells, we found that there is strong standing wave reflection in the absorption band of the medium cell InGaAs, which reduces the current density of the medium cell. Imported GaInP / InGaAs / Ge triple-junction solar cells Batteries also have this problem. [0003] The structure of a typical triple-junction solar cell in the prior art is: the top cell is AlInP(n + , 35nm,) / GaInP(n / p, 520nm) / AlInP(p + , 40nm); the medium cell is AlInP(n + , 50nm) / InGaAs(n / p, 3.5μm) / AlGaAs(p + , 100nm); the bottom cell is GaInP(n + , 100nm) / Ge(n + , 100nm) / Ge(p + , 170μm); the tunnel junction is AlGaA...

Claims

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Application Information

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IPC IPC(8): H01L31/042H01L31/078
CPCY02E10/52Y02E10/50
Inventor 王亮兴陈鸣波张玮李红波池卫英余甜甜张梦炎陆剑锋
Owner SHANGHAI INST OF SPACE POWER SOURCES
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