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Extensible semiconductor resistive flexible gas sensor and preparation method thereof

A gas sensor and resistive technology, applied in the field of stretchable semiconductor resistive flexible gas sensor and its preparation, can solve the problems of slow response/recovery time, poor flexibility of rigid substrate, low gas-sensing response sensitivity, etc., and achieve enhanced long-term Stability, low cost, and the effect of improving gas sensing characteristics

Active Publication Date: 2017-06-09
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the above defects or improvement needs of the prior art, the present invention provides a stretchable semiconductor resistive flexible gas sensor with a micro-wrinkled film structure and its preparation method, aiming to solve the problems in the prior art due to the poor flexibility of the rigid substrate and the The problem of incompatibility between the film forming process and the flexible substrate leads to low sensitivity of the gas sensor response, slow response / recovery time and technical problems that limit its development on flexible electronic devices

Method used

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  • Extensible semiconductor resistive flexible gas sensor and preparation method thereof
  • Extensible semiconductor resistive flexible gas sensor and preparation method thereof
  • Extensible semiconductor resistive flexible gas sensor and preparation method thereof

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preparation example Construction

[0028] A stretchable semiconductor resistive gas sensor with thin film micro-wrinkle structure and its preparation method according to the embodiment of the present invention, such as figure 1 As shown, the specific steps are as follows:

[0029] (1) Fix the flexible insulating substrate VHB unidirectional pre-stretching 0-200% on the rigid base (optional);

[0030] (2) The graphene paper prepared by the suction filtration method is used as a sensor electrode and transferred to the VHB to prepare a patterned graphene electrode;

[0031] (3) Colloidal quantum dot solution is coated on the VHB substrate with patterned graphene electrode, make it form a film evenly, the film forming method includes methods such as spin coating, drop coating, spraying, printing;

[0032] (4) Treat the quantum dot film with a short-chain salt solution ligand to replace the long-chain oleic acid oleylamine ligand coated on the film surface, so that the target gas molecules are more likely to contac...

Embodiment 1

[0036] Embodiment 1: The preparation of a stretchable semiconductor resistive gas sensor with a pre-stretching degree of 0 specifically includes the following steps:

[0037] (1) Preparation of PbS colloidal quantum dot solution. PbO is used as the lead source, bistrimethylsilathane (TMS) is used as the sulfur source, and colloidal chemical method is used to generate it.

[0038] Specifically, 0.9 g (4 mmol) PbO was dissolved in 3 mL oleic acid (OA) and 17 mL octadecene (ODE) under nitrogen atmosphere and heated to 90 °C to prepare the precursor of lead oleate as the lead source. After evacuating for 8 hours, the temperature of the precursor was raised to 120°C. Dissolve 180 μL (1 mmol) TMS into 10 mL ODE as a sulfur source. Rapidly inject the sulfur source into the lead source at 120°C, and after the color of the reaction system turns black (about 15s), put the solution into cold water to rapidly drop the temperature to room temperature. Add an appropriate amount of aceton...

Embodiment 2

[0046] Embodiment 2: The preparation of a stretchable semiconductor resistive gas sensor with a pre-stretching degree of 80% specifically includes the following steps:

[0047] Implementation steps (1) (2) (4) (5) (6) are identical with embodiment 1, and concrete implementation steps (3) (7) are as follows:

[0048] (3) 80% of the VHB substrate is pre-stretched in one direction and fixed on the glass substrate;

[0049] (7) Put it in the air for 30-45s and wait for the quantum dot film to dry, then slowly retract the VHB substrate at a rate of 1cm / s to obtain a semiconductor resistive gas sensor with a film micro-wrinkled structure and stretchable properties .

[0050] The wrinkle degree of the gas sensor prepared in Example 2 of the present invention and the response sensitivity to 50 ppm nitrogen dioxide at room temperature and different humidity conditions were tested.

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Abstract

The invention discloses an extensible semiconductor resistive flexible gas sensor with micro-wrinkle film structure and a preparation method thereof. Insulating substrate-polyacrylate double-sided foam tape (VHB, very high bond) that is extensible is unilaterally pre-extended to certain extent and fixed to a rigid substrate; a patterned graphene electrode and a colloidal quantum dot film are prepared on a VHB substrate that is pre-extended, and the sensor is prepared by retracting the VHB substrate slowly. The gas sensor prepared in the method has a gas-sensitive layer of micro-wrinkle film structure and a patterned graphene electrode, the gas sensor features extensibility, manufacturing temperature and operating temperature of the sensor can be lower than room temperature, transient or minor changes in gas concentration can be detected at room temperature, and the gas sensor has high response restoring speed and sensitivity, has certain resistance to ambient humidity interference and has better long-term stability.

Description

technical field [0001] The invention belongs to the technical field of gas-sensing materials and components, and more specifically relates to a stretchable semiconductor resistive flexible gas sensor with a thin-film microscopic wrinkled film structure using colloidal quantum dots as a gas-sensing material and a preparation method thereof. Background technique [0002] Due to the high manufacturing temperature of traditional gas sensors, high heat-resistant rigid materials such as ceramics, quartz, and silicon are usually used as substrates. With the development of low-temperature or even room-temperature deposition processes for nanomaterials, spin-coating can be used in the latest gas sensor research. Coating the gas-sensitive material according to the required pattern on flexible substrates such as plastics (such as PET polyester, polyimide PI) or even paper with lower heat-resistant temperature by means of , pulling, printing, printing, etc., to produce The new type of f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/125
Inventor 刘欢臧剑锋宋志龙黄钊
Owner HUAZHONG UNIV OF SCI & TECH
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