Infrared detector, infrared imager and preparation method of infrared detector

Abstract

The embodiment of the invention provides an infrared detector, an infrared imager and a preparation method of the infrared detector, and the infrared detector comprises a substrate layer which can transmit infrared radiation of a preset infrared radiation band; a first electrode layer formed on the substrate layer; and one infrared detection unit formed on the first electrode layer or at least twoinfrared detection units which are arranged at an interval, wherein each infrared detection unit comprises an infrared absorption layer formed on the first electrode layer and a second electrode layer formed on the infrared absorption layer, and a preset number of colloid quantum dots are arranged in the infrared absorption layer. The preparation process of the infrared detector is simple, the cost is low, the infrared detector is not limited by epitaxial equipment at all, and infrared absorption layers of various sizes can be prepared according to requirements, so the wavelength of infraredradiation capable of being detected by the infrared detector is flexible and adjustable, and the universality is high.

Description

technical field [0001] The invention relates to the technical field of infrared detection equipment manufacturing, in particular to an infrared detector, an infrared imager and a preparation method of the infrared detector. Background technique [0002] Infrared detectors include various types that can detect different infrared wavelength ranges. For example, currently, infrared detectors that can detect medium and long-wavelength bands (such as: 3-5μm and 8-14μm) usually use narrow-bandgap mercury cadmium telluride materials / solids Preparation of semiconductor epitaxial quantum wells / solid semiconductor epitaxial quantum dots, etc. Among the prepared detection devices, the mercury cadmium telluride infrared detection device is expensive and has poor uniformity. However, the infrared absorption materials of quantum well infrared detectors or epitaxial quantum dot infrared detection devices need to be prepared and synthesized by complex technologies such as molecular beam ep...

AI Technical Summary

Problems solved by technology

Among the prepared detection devices, mercury cadmium telluride infrared detection devices are expensive and have poor uniformity

However, the infrared absorption materials of quantum well infrared detectors or epitaxial quantum dot infrared detection devices need to be prepared and synthesized by complex technologies such as molecular beam epitaxy or chemical vapor deposition, and the preparation process is complicated; moreover, molecular beam epitaxy requires high vacuum or ultra-high vacuum environment, the preparation cost of this kind of infrared absorbing material is very high; in addition, due to the limitation of epitaxial equipment, the preparation size of this kind of infrared absorbing material is very limited, and the adjustability of its detectable wavelength is poor

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