The invention discloses an MEMS
infrared light source with a 3D structure and a preparation method thereof, and the preparation method comprises the steps: cleaning a
silicon substrate, depositing supporting
layers on the upper surface and the lower surface of the
silicon substrate respectively,
processing a heating
electrode on the supporting layer on the upper surface, and
processing to obtain an
isolation layer covering the heating
electrode and the supporting layer; an
infrared radiation material layer is processed in the middle area of the
isolation layer, and planar electrodes communicated with the heating
electrode are processed on the two sides of the
infrared radiation material layer;
etching and windowing are carried out on the middle area of the supporting layer on the lower surface of the
silicon substrate to form a substrate cavity,
etching and windowing are carried out on the supporting layer on the
peripheral area of the substrate cavity to form an
etching window, substrate body silicon secondary etching is carried out on the lower surface of the silicon substrate to form a
communicating cavity, and therefore the MEMS infrared
light source with the 3D structure is obtained. According to the preparation method, the communication cavity beneficial to ventilation is formed by etching below the infrared
light source through secondary etching, so that the reliability and the stability of high-temperature
radiation of the infrared light source are improved.