All-inorganic quantum-dot light emitting diode

A quantum dot light-emitting and light-emitting diode technology, which is applied in the field of diodes, can solve the problems of high electron injection rate, quantum dot charging, and strict packaging technology requirements, so as to improve luminous efficiency, reduce absorption and blocking, and improve carrier transmission efficiency. Effect

Inactive Publication Date: 2014-12-10
DONGHUA UNIV
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Problems solved by technology

The former requires a high start-up voltage, and the material of the organic polymer has poor air stability, is not resistant to high temperature, and has high requirements for strict packaging technology, so there are big problems
Although the inorganic carrier transport layer has good air stability and does not need to be tightly sealed, there are still certain problems: the rate of hole injection into quantum dots in the hole transport layer and the rate at which electrons are injected into quantum dots by the electron transport layer are very different. Generally, the electron injection rate is high, which leads to the accumulation of electrons in the quantum dots, and the excess electrons will lead to charging of the quantum dots and non-radiative recombination

Method used

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  • All-inorganic quantum-dot light emitting diode

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Effect test

Embodiment 1

[0022] The cathode is made of commercial FTO conductive glass; the electron transport layer is TiO prepared by solvothermal method 2 Thin film with a thickness of 150nm; the light-emitting layer is CdSe with core-shell structure 2 / ZnS quantum dots, the emission peak half-maximum width is 28nm; the luminous efficiency of quantum dots is 84.6%; the anode is a metal aluminum film deposited by evaporation method, and its thickness is 80nm.

Embodiment 2

[0024] The cathode uses commercial FTO conductive glass; the electron transport layer is anatase and rutile doped structure n-type semiconductor TiO with oxygen ion vacancies prepared by solvothermal method 1.2 Thin film with a thickness of 150nm; the light-emitting layer is CdSe with a core-shell structure prepared by colloidal method 2 / ZnS quantum dots, the emission peak half-maximum width is 28nm; the luminous efficiency of quantum dots is 84.6%; the anode is a metal aluminum film deposited by evaporation method, and its thickness is 80nm.

Embodiment 3

[0026] The cathode uses commercial FTO conductive glass; the electron transport layer is anatase and rutile doped structure n-type semiconductor TiO with oxygen ion vacancies prepared by solvothermal method 1.2 Thin film with a thickness of 150nm; the light-emitting layer is Cd with core-shell structure prepared by colloidal method 1.2 Se 0.8 / ZnS quantum dots, the half-maximum width of the emission peak is 32nm; the luminous efficiency of the quantum dots is 86%; the anode is a metal aluminum film deposited by evaporation method, and its thickness is 80nm.

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Abstract

The invention relates to an all-inorganic quantum-dot light emitting diode. A positive electrode, a light emitting layer, an electron transmission layer and a negative electrode are sequentially superposed on the light emitting diode. A TiO2-x film with n-typed semiconductor defects and a colloidal quantum-dot light emitting layer with p-typed semiconductor defects are adopted. When bias voltage is added to the positive and negative electrodes, p-n junction excitons can be generated at the positions of the interfaces of the electron transmission layer and the light emitting layer. On one hand, transmission efficiency of current carrier electrons can be effectively improved by adopting TiO2-x as the electron transmission layer, on the other hand, inhibition of hole-free transmission layer on light emitting of the excitons can be decreased to a large extent, and electro-optical conversion efficiency of the quantum-dot light emitting diode can be greatly improved.

Description

technical field [0001] The invention belongs to the field of diodes, in particular to an all-inorganic quantum dot light-emitting diode. Background technique [0002] With the society's continuous requirements for high efficiency, environmental protection and energy saving, the new photoelectric technology LED has gradually replaced traditional lighting materials with its advantages of low energy consumption, less heat generation, and long service life, and has become the most potential new green lighting source in the contemporary era. And has been widely used in white lighting, color display, backlight, lantern decoration and other fields. Among them, organic light-emitting diodes (OLEDs) were first developed, but due to unavoidable problems in packaging technology and service life, after continuous exploration, it has been found that inorganic light-emitting diodes can effectively solve this problem in recent years, not only reducing OLED Strict requirements on the packa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52H01L33/28
CPCH01L33/285H10K50/165
Inventor 李耀刚李佳慧王宏志张青红
Owner DONGHUA UNIV
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