Infrared detector, infrared imager and preparation method of infrared detector

Abstract

The embodiment of the invention discloses an infrared detector, an infrared imager and a preparation method of the infrared detector. The infrared detector comprises at least one pixel, and the pixelcomprises a substrate layer, at least one laminated structure and a top electrode layer which are sequentially arranged from bottom to top; the laminated structure comprises an electrode layer and a quantum dot infrared absorption layer which are sequentially arranged from bottom to top; the quantum dot infrared absorption layer comprises a preset number of colloid quantum dots and is used for detecting infrared radiation; the wavelengths of infrared radiation detected by the quantum dot infrared absorption layers in different laminated structures are different. The infrared detector is simplein preparation process and low in cost; in addition, the wavelengths of infrared radiation detected by the quantum dot infrared absorption layers in different laminated structures are different, so infrared detection materials with different detection wavelengths are integrated on the same substrate structure, the detection range of the infrared detector can be better expanded, and the system performance is improved.

Description

technical field [0001] The invention relates to the technical field of infrared detection, in particular to an infrared detector, an infrared imager and a preparation method of the infrared detector. Background technique [0002] Infrared detection and imaging technology was mainly used in the military field in the early days. With the continuous advancement of industry technology, the application scope of infrared detection and imaging technology has gradually expanded to the civilian field, and the development speed has accelerated. Infrared detectors can be divided into cooled photon detectors and uncooled photon detectors. There are two types of heat detectors. At this stage, the research work of infrared detectors in my country has developed from units and lines to infrared focal planes, and the product coverage has continued to expand, gradually forming a relatively complete infrared detector research and production system. [0003] Commonly used uncooled infrared det...

AI Technical Summary

Problems solved by technology

These devices have good performance, but their chip materials need to be realized with complex epitaxy technology, which is costly

For example, the infrared absorption materials of quantum well infrared detectors or epitaxial quantum dot infrared detection devices need to be prepared and synthesized by complex techniques such as molecular beam epitaxy or chemical vapor deposition, and the preparation process is complicated; moreover, molecular beam epitaxy also requires an ultra-high vacuum environment , leading to very high preparation costs of this kind of infrared absorbing material; in addition, due to the limitation of epitaxial equipment, the preparation size of this kind of infrared absorbing material is relatively limited, and the adjustability of its detectable wavelength is poor

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