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415results about How to "Reduce manufacturing complexity" patented technology

Resonant type Fabry-Perot optical fiber sensor, manufacturing method and air pressure detecting method

The invention provides a resonant type Fabry-Perot optical fiber sensor which comprises a sensor body and a through hole penetrating through the sensor body. One end of the through hole is provided with a graphene thin film for sensing the to-be-detected air pressure in an attached mode, and the other end of the through hole is provided with transmission optical fibers which penetrate through the through hole and are matched with the through hole. According to the resonant type Fabry-Perot optical fiber sensor, the air pressure of gas is calculated in the mode that graphene thin film resonant frequency changes are caused by damp of the gas to the graphene thin film, so that a closed Fabry-Perot cavity is not needed, and the manufacturing difficulty is reduced; the the original measurement thin film deformation quantity is replaced by resonance to further conduct air pressure measurement, and thin film material creeping caused by repeated film deformation is effectively reduced; digital frequency signals after probe laser detection are output after the sensor conducts detection, and result analysis can be conveniently carried out compared with light wave signals of an interferometric sensor. Stimulation and detection are carried out through the single transmission optical fibers, and long-distance air pressure measurement can be achieved, and the applicability of the sensor is greatly improved.
Owner:THE HONG KONG POLYTECHNIC UNIV SHENZHEN RES INST

Digital loudspeaker drive method and device based on quaternary code dynamic mismatch reshaping

The invention relates to a digital loudspeaker drive method and a device based on quaternary code dynamic mismatch reshaping. The method comprises the steps of (1) conducting input format conversion, (2) conducting multi-bit sigma to delta modulation, (3) conducting thermometer code conversion, (4) conducting dynamic mismatch reshaping processing, (5) conducting channel data combination and mapping coding, (6) controlling metal-oxide-semiconductor field effect transistor (MOSFET) pipe of a full-bridge power amplifier network to conduct opening and closing status switching, and driving a digitalized loudspeaker load to produce sound. The device comprises a sound source (1), a digital format converter (2), a multi-bit sigma to delta modulator (3), a thermometer coder (4), a dynamic mismatch reshaper (5), a channel data combiner (6), a mapping coder (7), a multi-channel digital amplifier (8) and the digitalized loudspeaker load (9). The units are sequentially connected in order. According to the digital loudspeaker drive method and the device based on quaternary code dynamic mismatch reshaping, use efficiency of an amplifier pipe and the load is improved, development periods and hardware implementation cost are saved, and good immunity is provided for frequency response deviation of digital channels.
Owner:INST OF ACOUSTICS CHINESE ACAD OF SCI

Enhanced graphene waveguide photodetector for integrally-distributed Bragg reflection grating

ActiveCN103943715ATo achieve the purpose of photoelectric detectionReduce volumeSemiconductor devicesResonant cavityGrating
The invention provides an enhanced graphene waveguide photodetector for an integrally-distributed Bragg reflection grating. The photodetector is manufactured on an SOI substrate and comprises an optical waveguide, an insulating transparent thin film, a graphene thin film, a first metal electrode, a second metal electrode and a gate electrode window. The optical waveguide is formed on the substrate in the longitudinal direction. The insulating transparent thin film is evenly manufactured on the substrate and covers the optical waveguide. The graphene thin film is manufactured on the insulating transparent thin film and covers the middle of the strip-shaped optical waveguide. The first metal electrode is provided with a contact end and a strip-shaped electrode end, the contact end of the first metal electrode is manufactured on one side of the insulating transparent thin film, and the electrode end of the first metal electrode is longitudinally manufactured on the graphene thin film. The second metal electrode is provided with a contact end and a strip-shaped electrode end, the contact end of the second metal electrode is manufactured on one side of the insulating transparent thin film, and the electrode end of the second metal electrode is longitudinally manufactured on the graphene thin film. The gate electrode window is formed on the insulating transparent thin film and located on any exposed surface of the insulating transparent thin film. The graphene photodetector is integrated with the waveguide, a resonant cavity and the like, and the defect of low optical responsivity is overcome.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI

Digital pulse-width-modulation generator

A digital pulse-width-modulation (PWM) generator comprising:
    • an n bit digital magnitude comparator having first and second n bit inputs and an output indicative of the relative values of the signals applied at the first and second inputs;
    • a first n bit digital up/down counter having a count direction input coupled to receive a sign bit of a digital unary input signal, an n bit parallel binary count output connected to the first n bit input of the magnitude comparator, and a clock input;
    • a second n bit counter having a clock input coupled to receive a constant rate clock signal and an n bit parallel binary count output connected to the second n bit input of the magnitude comparator;
    • an AND gate having a first input coupled to receive the constant rate clock signal in frequency divided form and a second input coupled to receive a magnitude portion of the digital unary input signal, and further having an output connected to the clock input of the first counter; and
    • wherein the comparator continually generates an output signal indicative of the relative magnitudes of the counts of the first and second counters, whereby said output signal is a PWM output signal with an average value representing a ramp voltage having a slope determined by magnitude portion of the digital unary input signal with a direction of a slope of the output signal being determined by the polarity of the sign bit.
Owner:1 LIMITED ST JOHN S INNOVATION CENT

ESD protection diode-integrated shielding gate trench MOSFET device and manufacturing method thereof

The invention provides an ESD protection diode-integrated shielding gate trench MOSFET device and a manufacturing method thereof. The device comprises a semiconductor substrate, an epitaxial layer positioned on the semiconductor substrate, a first trench, a second trench and a third trench formed in the epitaxial layer and arranged in sequence, a shielding electrode filled in the second trench andon the lower parts of the first trench and the third trench, an insulating isolation layer for coating the shielding electrode, a gate electrode and a gate dielectric layer for filling the upper partof the first trench, an ESD protection diode arranged on the upper part of the third trench, a body region positioned on the upper part of the epitaxial layer, a source region positioned on the bodyregion, and a drain region arranged below the semiconductor substrate, wherein source end metal is electrically connected with the source region, the body region, the shielding electrode and one end of the ESD protection diode; and the gate end metal is connected with the gate electrode and the other end of the ESD protection diode. The device is compact in structure and excellent in performance,and the realization method is simple, so that the electric leakage of the ESD protection diode can be lowered, and the anti-ESD impact capability of the MOSFET gate is improved.
Owner:CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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